Diodes-Incorporated-DMN2041UFDB-7
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DMN2041UFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
I
D MAX
T
A
= +25°C
4.7A
Device
BV
DSS
R
DS(ON) MAX
Low Input Capacitance
40m
Ω @ V
GS
= 4.5V
65m
Ω @ V
GS
= 2.5V
Low Profile, 0.6mm Max Height
N-Channel
20V
3.7A
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: U-DFN2020-6
Load Switch
Case Material:
Molded Plastic, “Green” Molding Compound
;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe; Solderable per
MIL-STD-202, Method 208
e4
Power Management Functions
Portable Power Adaptors
Terminal Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type B)
D2
D1
S2
G2
D2
G2
G1
D1
D1
D2
ESD PROTECTED
G1
Gate Protection
Diode
Gate Protection
Diode
S2
S1
S1
Pin1
Q1 N-CHANNEL
Q2 N-CHANNEL
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN2041UFDB
-7
DMN2041UFDB
-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm b
romine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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February 2020
© Diodes Incorporated
DMN2041UFDB
Document number: DS37421 Rev. 4 – 2
DMN2041UFDB
Marking Information
Site 1
U-DFN2020-6 (Type B)
D7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
D7
M = Month (ex: 9 = September)
Date Code Key
Year
2014
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
B
…
H
I
J
K
L
M
N
O
P
R
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
Site 2
D7 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
D7
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2014
4
…
…
2020
0
2021
1
2022
2
2023
3
2024
4
2025
5
2026
6
2027
7
2028
8
2029
9
Code
Week
Code
1-26
27-52
53
A-Z
a-z
z
Internal Code
Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
T
U
V
W
X
Y
Z
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February 2020
© Diodes Incorporated
DMN2041UFDB
Document number: DS37421 Rev. 4 – 2
DMN2041UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Unit
V
Gate-Source Voltage
±12
V
V
GSS
Steady
State
4.7
3.8
T
A
= +25°C
T
A
= +70°C
A
A
I
D
I
D
Continuous Drain Current (Note 5) V
GS
= 4.5V
6.1
4.9
T
A
= +25°C
T
A
= +70°C
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
2
A
A
I
S
20
I
DM
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Steady State
1.4
2.2
92
Total Power Dissipation (Note 5)
W
P
D
t < 5s
Steady State
t < 5s
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
55
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
30
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
1.0
±10
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
μA
μA
I
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.35
—
—
23
1.4
40
V
mΩ
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 4.2A
V
GS
= 2.5V, I
D
= 3.3A
V
GS
= 0V, I
S
= 4.4A
Static Drain-Source On-Resistance
—
26
65
Diode Forward Voltage
—
0.75
1.2
DYNAMIC CHARACTERISTICS
(Note 7)
Input Capacitance
—
—
—
—
—
—
713
80
68
15
8
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 10V, I
D
= 5.5A
nC
nC
Total Gate Charge (V
GS
= 4.5V)
Q
g
15
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
—
—
—
—
—
—
—
1.0
1.1
—
—
—
—
—
—
—
nC
nC
ns
ns
ns
ns
ns
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
3.6
Turn-On Rise Time
15.9
16.0
2.6
V
DD
= 10V, V
GS
= 4.5V,
Turn-Off Delay Time
R
L
= 2.3
Ω, R
G
= 1
Ω
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
6.6
t
RR
I
S
= 4.4A, dI/dt = 100A/
μ
s
I
S
= 4.4A, dI/dt = 100A/
μ
s
—
1.2
—
Q
RR
Notes:
5.
Device mounted on 1” x 1” FR
-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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February 2020
© Diodes Incorporated
DMN2041UFDB
Document number: DS37421 Rev. 4 – 2
DMN2041UFDB
20
18
16
14
12
10
8
20
18
16
14
12
10
8
V
= 8.0V
GS
V
= 5.0V
DS
V
= 4.5V
GS
V
= 1.5V
GS
V
= 3.0V
GS
V
= 2.5V
GS
V
= 2.0V
GS
6
6
T =
150°C
A
T
= 85°C
4
4
A
T
= 25°C
A
V
= 1.0V
T
= 125°C
GS
A
2
2
T
= -55°C
A
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Figure 1 Typical Output Characteristics
0.03
0.029
0.028
0.027
0.026
0.025
0.024
0.023
0.022
0.021
0.02
0.04
0.035
0.03
V
= 4.5V
GS
T
= 150°C
A
T
= 125°C
A
V
= 2.5V
GS
T
= 85°C
A
V
= 4.5V
GS
T
= 25°C
0.025
0.02
A
T
= -55°C
A
0.015
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1.8
1.6
1.4
1.2
1
0.05
0.04
0.03
0.02
V
= 2.5V
GS
I
= 3.3A
D
V
= 2.5V
GS
= 3.3A
I
D
V
= 4.5V
GS
I
= 4.2A
D
V
= 4.5V
GS
= 4.2A
I
D
0.8
0.01
0.6
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 5 On-Resistance Variation with
T
emperature
Figure 6 On-Resistance Variation with
T
e
mperature
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February 2020
© Diodes Incorporated
DMN2041UFDB
Document number: DS37421 Rev. 4 – 2
DMN2041UFDB
20
18
16
14
12
10
8
1
0.8
0.6
0.4
0.2
0
I
= 1mA
D
I
= 250µA
D
6
T
= 85°C
T
= 150°C
A
A
4
T
= 25°C
T
= 125°C
A
A
2
T
= -55°C
A
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100
125 150
V
S
D
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
T ,
JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Junction Temperature
J
10000
8
7
6
5
4
3
2
1
0
1000
V
I
= 10V
C
DS
= 5.5A
iss
D
100
10
C
oss
C
rss
f =1MHz
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Q
g
, TO
T
A
L GATE CHARGE (nC)
Figure 10 Gate Charge
100
10
R
DS(on)
Limited
DC
P
= 10s
W
1
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
0.1
0.01
P
= 1ms
T
T
= 1
150°C
W
J(max)
=
25°C
A
P
=
100µs
V
= 4.5V
W
GS
Single Pulse
DUT on 1 * MRP Board
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 11 SOA Safe Operation Area
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February 2020
© Diodes Incorporated
DMN2041UFDB
Document number: DS37421 Rev. 4 – 2
DMN2041UFDB
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 1
Duty Cycle, D = t1/ t2
163°C/W
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
F
r
T
T
r
l
s
Figure 12 Transient Thermal Resistance
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February 2020
© Diodes Incorporated
DMN2041UFDB
Document number: DS37421 Rev. 4 – 2
DMN2041UFDB
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
Seating Plane
U-DFN2020-6
Type B
Dim
A
A1
A3
b
D
D2
e
Min
Max Typ
D
0.545 0.605 0.575
0.00 0.05 0.02
–
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
D2
D2
–
0.13
R
0
.150
–
–
0.65
z1
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
E
E2
z1
–
–
0.45
k
L
0.25 0.35 0.30
z
z1
–
–
–
–
0.225
0.175
L
All Dimensions in mm
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
C
G
G1
X
X1
X2
Y
Y1
Y2
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
X1(2x)
Y1(2x)
Y2
G
Y
G1
X
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February 2020
© Diodes Incorporated
DMN2041UFDB
Document number: DS37421 Rev. 4 – 2
DMN2041UFDB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
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February 2020
© Diodes Incorporated
DMN2041UFDB
Document number: DS37421 Rev. 4 – 2
