Diodes-Incorporated-DMN2044UCB4-7
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DMN2044UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Ultra Small 1.0mm x 1.0mm Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony
Free. “Green” Device (Note
3)
I
D
BV
DSS
R
DS(ON) Max
T
A
= +25°C
t =10s
4.5A
4.2A
4.0A
1.5A
40m
Ω
@ V
GS
= 4.5V
50m
Ω @ V
GS
= 2.5V
56m
Ω @ V
GS
= 1.8V
70m
Ω @ V
GS
= 1.5V
20V
Mechanical Data
Description and Applications
Case: U-WLB1010-4 (Type B)
Moisture Sensitivity:
Level 1 per J-STD-020
Terminal: Finish
—
SnAgCu. Solderable per MIL-STD-202 Method
208
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications. It
is a high performance MOSFET in ultra-small 1.0mm x 1.0mm
package.
Terminal Connections: See Diagram
Portable Applications
Load Switch
Power Management Functions
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN2044UCB4-7
U-WLB1010-4 (Type B)
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3.
Halogen and Antimony free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tot
al Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
ZW = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: F = 2018)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
Code
D
E
F
G
H
I
J
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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July 2018
© Diodes Incorporated
DMN2044UCB4
Document number: DS36818 Rev. 4 – 2
DMN2044UCB4
Maximum Ratings
Characteristic
Symbol
V
DSS
Value
20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
8
V
GSS
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
3.3
2.6
A
A
Continuous Source Current @ V
GS
= 4.5V, t=10s (Note 5)
Continuous Source Current @ V
GS
= 4.5V, t=10s (Note 6)
I
D
4.5
3.6
I
D
I
DM
I
S
Pulsed Drain Current (Pulse D
uration 10μs,
Duty C
ycle ≤1%
)
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
16
1.2
10
A
A
A
I
SM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
0.72
175
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Total Power Dissipation (Note 6)
°C/W
°C/W
W
R
θ
JA
40
R
θ
JC
P
D
1.18
106
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
θJA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
—
—
1.0
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
µA
mA
nA
V
DS
= 20V, V
GS
= 0V
Zero Gate Voltage Drain Current
1.0
V
DS
= 20V, V
GS
= 0V , T
J
= +150°C
V
GS
=
8V, V
DS
= 0V
Gate-Body Leakage
100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
—
—
0.9
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 1.5A
V
GS
= 2.5V, I
D
= 1.0A
V
GS
= 1.8V, I
D
= 1.0A
V
GS
= 1.5V, I
D
= 0.5A
V
GS
= 0V, I
S
= 1.5A
29
32
36
43
40
50
56
70
Static Drain-Source On-Resistance
Body Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
0.7
1.2
C
iss
C
oss
C
rss
R
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1056
117
105
0.98
13.1
23.2
1.4
1400
160
140
1.5
26.5
47
—
pF
pF
pF
Ω
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Q
g
Q
g
V
DS
= 10V, I
D
= 1.5A
Q
gs
Q
gd
Q
RR
t
RR
t
A
Gate-Drain Charge
2.1
—
Reverse Recovery Charge
Body Diode Reverse Recovery Time
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Turn-On Delay Time
2.16
7.92
6.5
6
18
—
I
F
= 1.5A, di/dt = 1
00A/μs
4.12
4.57
6.33
19.84
2.96
2.88
6.31
14.9
1.71
—
t
B
10
15
42
6
t
D(ON)
t
R
t
D(OFF)
t
F
t
D(ON)
t
R
t
D(OFF)
t
F
Turn-On Rise Time
V
DD
= 10V, I
D
= 1.5A
V
GEN
= 4.5V, R
G
= 1
Ω
, R
L
= 6.7
Ω
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Delay Time
6
Turn-On Rise Time
14
30
4
V
DD
= 10V, I
D
= 1.5A
V
GEN
= 8V, R
G
= 1
Ω
, R
L
= 6.7
Ω
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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July 2018
© Diodes Incorporated
DMN2044UCB4
Document number: DS36818 Rev. 4 – 2
DMN2044UCB4
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
9
V
= 8V
V
= 5.0V
GS
DS
V
= 4.5V
GS
8
V
= 4.0V
GS
)
7
(
V
= 3.0V
GS
V
= 2.5V
GS
6
T
= 150°C
V
= 2.0V
A
GS
5
V
= 1.8V
GS
T
= 125°C
A
V
= 1.5V
GS
4
I
T
= 85°C
A
3
V
= 1.2V
GS
,
I
T
= 25°C
A
2
1
0
T
= -55°C
A
V
= 1.0V
GS
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.06
0.05
0.04
0.03
0.02
0.01
V
= 1.5V
GS
I
= 500mA
D
V
V
= 1.8V
= 2.5V
GS
I
= 1.5A
D
GS
I
= 1.0A
D
V
= 4.5V
GS
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical Transfer Characteristics
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.6
1.2
0.8
0.4
1.2
1
)
(
V
I
= 4.5V
= 2.0A
GS
D
0.8
0.6
0.4
0.2
0
I
= 1mA
D
V
I
= 2.5V
= 1.0A
GS
D
I
= 250µA
D
,
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
C)
T ,
JUNCTION TEMPERATURE (C)
J
Figure 5 On-Resistance Variation with
T
emperature
Figure 6 Gate Threshold Variation
vs. Junction Temperature
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July 2018
© Diodes Incorporated
DMN2044UCB4
Document number: DS36818 Rev. 4 – 2
DMN2044UCB4
10000
1000
10
8
C
iss
V
= 10V
= 1.5A
DS
6
I
D
C
oss
100
10
1
C
rss
4
2
f = 1MHz
0
0
5
10
15
20
25
0
2
4
6
8
10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8 Gate Charge
Figure 7 Typical Junction Capacitance
400
350
300
250
200
150
100
50
100
10
1
R
DS(ON)
Limited
Single Pulse
R
R
T
= 175
C/W
JA
= r
* R
JA(t)
(t)
JA
– T
= P * R
J
A
JA(t)
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
0.1
P
= 10ms
W
T
T
= 150°C
P
= 1ms
W
P
J(max)
= 25°C
= 100µs
W
A
V
= 4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0
1
1
1
0
0
0
0
5
0.1
1
10
100
0
0
0
1
0
0
0
0
.
–
0
0
1
0
0
.
0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
E
0
1
0
.
0
1
1
0
t1, PULSE DURATION TIME (sec)
Figure 9 Single Pulse Maximum Power Dissipation
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July 2018
© Diodes Incorporated
DMN2044UCB4
Document number: DS36818 Rev. 4 – 2
DMN2044UCB4
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
JA
(t) = r(t) * R
JA
R
JA
= 1
°C
Duty Cycle, D = t1/ t2
175 /W
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 11
Transient Thermal Resistance
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© Diodes Incorporated
DMN2044UCB4
Document number: DS36818 Rev. 4 – 2
DMN2044UCB4
Package Outline Dimensions
U-WLB1010-4 (Type B)
Pin1
b( 4x)
1
2
2
1
U-WLB1010-4 (Type B)
Dim Min
Max Typ
0.4535 0.5565 0.5050
A1
0.2115 0.2585 0.2350
A2
0.2200 0.2700 0.2450
A3
0.0220 0.0280 0.0250
A
B
A
B
E
e
A
b
D
e
0.2880 0.3520 0.3200
D
1.030
1.070 1.050
0.500 BSC
A3
E
1.030
1.070 1.050
All Dimensions in mm
A2
A
A1
Suggested Pad Layout
U-WLB1010-4 (Type B)
X( 4x)
C
Value
(in mm)
0.500
Dimensions
C
X
0.3200
C
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July 2018
© Diodes Incorporated
DMN2044UCB4
Document number: DS36818 Rev. 4 – 2
DMN2044UCB4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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© Diodes Incorporated
DMN2044UCB4
Document number: DS36818 Rev. 4 – 2
