Diodes-Incorporated-DMN2050LQ-7

DMN2050LQ  

N-CHANNEL ENHANCEMENT MODE MOSFET  

Product Summary  

Features and Benefits  























Low On-Resistance  

I

D

Max  

T

A

= +25°C  

BV

DSS  

R

DS(ON)

Max  

29m



@V

GS

= 4.5V  

50m



@V

GS

= 2.5V  

29m

Ω @ V

GS

= 4.5V  

50m

Ω @ V

GS

= 2.5V  

5.9A  

4.3A  

100m



@V

GS

= 2.0V  

20V  

Very Low Gate Threshold Voltage  

Low Input Capacitance  

Fast Switching Speed  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3

)  

Qualified to AEC-Q101 Standards for High Reliability  

PPAP Capable (Note 4)  

Description and Applications  

This MOSFET is designed to meet the stringent requirements of  

automotive applications. It is qualified to AEC-Q101, supported by a  

PPAP and is ideal for use.  

Mechanical Data  





Case: SOT23  

Case Material: Molded Plastic, “Green” Mo

lding Compound.

 

UL  

Flammability Classification Rating 94V-0  

Moisture Sensitivity:

 

Level 1 per J-STD-020  

Terminal Connections: See Diagram  







Terminals: Finish



Matte Tin Annealed over Copper Leadframe.  

e3  

Solderable per MIL-STD-202, Method 208  

Weight: 0.008 grams (Approximate)  



SOT23  

D

D

G

S

G

Top View  

Pin-Out  

S

Top View  

Equivalent Circuit  

Ordering Information

(Note 5)  

Part Number  

Case  

Packaging  

DMN2050LQ-7  

SOT23  

3000/Tape & Reel  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

2. See

r more information about Diodes Incorporated’s definitions of Halogen

– and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-

free “Green” products are defined

as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to

5. For packaging details, go to our website at

Marking Information  

MN3 = Marking Code  

YM = Date Code Marking  

MN3  

MN3  

Y

Y or

 

= Year (ex: G = 2019)  

M = Month (ex: 9 = September)  

Date Code Key  

2024  

Year  

2008  

~

2018  

2019  

2020  

2021  

2022  

2023  

Code  

V

~

F

G

H

I

J

K

L

Month  

Code  

Jan  

1

Feb  

2

Mar  

3

Apr  

4

May  

5

Jun  

6

Jul  

7

Aug  

8

Sep  

9

Oct  

O

Nov  

N

Dec  

D

1 of 6  

May 2019  

© Diodes Incorporated  

DMN2050LQ  

Document number: DS41550 Rev. 2 – 2  

DMN2050LQ  

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Drain-Source Voltage  

Symbol  

V

DSS  

V

GSS  

I

D  

Value  

20  

Unit  

V

Gate-Source Voltage  

±12  

5.9  

V

Drain Current (Note 6)  

A

Pulsed Drain Current (Note 7)  

21  

A

I

DM  

Thermal Characteristics  

Characteristic  

Total Power Dissipation (Note 6)  

Symbol  

P

D  

Value  

1.4  

Unit  

W

Thermal Resistance, Junction to Ambient (Note 6)  

Operating and Storage Temperature Range  

90  

°C/W  

°C  

R

θ

JA  

-55 to +150  

T

J

, T

STG  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS (Note7)  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

V

GS

= 0V, I

D

= 250µA  

20  

—

—

—

—

—

—

1

V

BV

DSS  

I

DSS  

µA  

nA  

V

DS

= 20V, V

GS

= 0V  

I

GSS  



100  

V

GS

=



12V, V

DS

= 0V  

ON CHARACTERISTICS (Note 7)  

Gate Threshold Voltage  

0.45  

—

24  

42  

68  

8

1.4  

29  

V

V

GS(TH)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 4.5V, I

D

= 5.0A  

V

GS

= 2.5V, I

D

= 3.1A  

V

GS

= 2.0V, I

D

= 1.5A  

V

DS

= 5V, I

D

= 2.1A  

V

GS

= 0V, I

S

= 2.0A  

Static Drain-Source On-Resistance  

—

50  

R

DS(ON)  

m

  

100  

—

Forward Transfer Admittance  

Diode Forward Voltage (Note 8)  

DYNAMIC CHARACTERISTICS (Note 9)  

Input Capacitance  

—

—

s

|Y

fs

|  

V

SD  

0.9  

1.4  

V

—

—

—

—

  

532  

144  

117  

1.3  

—

—

—

—

  

pF  

pF  

pF  



C

iss  

C

oss  

C

rss  

R

g  

V

DS

= 10V, V

GS

= 0V  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate Resistance  

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz  

SWITCHING CHARACTERISTICS

(Note 9)  

Total Gate Charge  

—

  

—

  

—

  

6.7  

0.8  

3.0  

—

  

—

  

—

  

Q

g  

Q

gs  

Q

gd  

V

DS

= 10V, V

GS

= 4.5V, I

D

= 5.0A  

V

DS

= 10V, V

GS

= 4.5V, I

D

= 5.0A  

V

DS

= 10V, V

GS

= 4.5V, I

D

= 5.0A  

Gate-Source Charge  

nC  

Gate-Drain Charge  

Notes:  

6. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R

θJA

= 90°C/W.  

7. Repetitive rating, pulse width limited by junction temperature.  

8. Short duration pulse test used to minimize self-heating effect.  

9. Guaranteed by design. Not subject to production testing.  

2 of 6  

May 2019  

© Diodes Incorporated  

DMN2050LQ  

Document number: DS41550 Rev. 2 – 2  

DMN2050LQ  

20  

16  

20  

16  

V

= 10V  

GS  

V

= 5V  

DS  

V

= 4.5V  

V

= 3.0V  

GS  

GS  

V

= 2.5V  

GS  

)

A

(

T

N

E

R

R

U

C

12  

8

12  

8

N

V

= 2.0V  

GS  

I

A

R

D

,

I

D  

4

0

T =

 

150°C  

4

0

A

T =

 

125°C  

T

= 85°C  

A

A

T

= 25°C  

A

V

= 1.5V  

GS  

T

= -55°C  

A

0

0.5  

1

1.5  

2

2.5  

3

0

0.5  

1

1.5  

2

2.5  

3

3.5  

4

4.5  

5

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

V

GS

, GATE-SOURCE VOLTAGE (V)  

Fig. 2 Typical Transfer Characteristic  

Fig. 1 Typical Output Characteristic  

0.08  

0.07  

0.06  

0.04  

)



(

E

C

N

A

T

S

V

= 4.5V  

GS  

T

= 150°C  

A

0.06  

0.05  

0.04  

0.03  

0.02  

I

S

E

T

= 125°C  

= 85°C  

A

R

V

= 2.5V  

GS  

–

N

T

A

A

O

E

C

R

U

O

S

T

= 25°C  

V

= 4.5V  

= 10V  

GS  

T

= -55°C  

0.02  

–

A

N

I

A

V

R

GS  

D

,

)

N

0.01  

0

O

(

S

D

R

0

0

4

8

12  

I

D

, DRAIN CURRENT (A)  

Fig. 4 Typical On-Resistance  

vs. Drain Current and Temperature  

16  

20  

0

4

8

12  

16  

20  

I

D

, DRAIN-SOURCE CURRENT (A)  

Fig. 3

 

Typical On-Resistance  

vs. Drain Current and Gate Voltage  

1.6  

1.6  

1.4  

1.4  

1.2  

1.0  

V

= 10V  

GS  

= 10A  

I

D

I

= 1mA  

D

V

= 4.5V  

1.2  

1.0  

GS  

I

= 5A  

D

I

=

2

2

5

5

0

0

礎



A  

0.8  

0.6  

0.4  

0.2  

0

D

0.8  

0.6  

-50 -25  

T

A

, AMBIENT TEMPERATURE

(  

Fig. 5 On-Resistance Variation with

T

emperature  

0

25  

50  

75 100

 

125 150  

-50 -25  

0

25  

50  

75 100

 

125 150  

(°C )  

(°C )  

癈

)

T

A

, AMBIENT TEMPERATURE

(  

癈

)  

Fig. 6 Gate Threshold Variation vs. Ambient

T

emperature  

3 of 6  

May 2019  

© Diodes Incorporated  

DMN2050LQ  

Document number: DS41550 Rev. 2 – 2  

DMN2050LQ  

1,000  

20  

16  

T =

 

25°C  

T

A

= 25  

癈

A

C

iss  

C

oss  

12  

C

rss  

100  

8

4

0

10  

0

5

10  

15  

20  

0

0.2  

0.4  

0.6  

0.8  

1

1.2  

V

SD

, SOURCE-DRAIN VOLTAGE (V)  

Fig. 7 Diode Forward Voltage vs. Current  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Fig. 8 Typical

T

o

tal Capacitance  

1

D = 0.7  

D = 0.5  

D = 0.3  

0.1  

D = 0.1  

D = 0.9  

D = 0.05  

D = 0.02  

R

(t) = r(t) * R  

R

θ

JA

(t) = r(t) * R

θ

JA  



JA  



JA  

/W  

R

= 88

℃

 

R =

 

8

8

/

W

癈

 

0.01  

D = 0.01  

P(pk)  

t

1

D = 0.005  

t

2

T

– T

 

= P * R

 

(t)  

J

A



JA  

Duty Cycle, D = t

 

/t  

D = Single Pulse  

1

2

0.001  

0.00001 0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1,000  

t

1

, PULSE DUR

A

T

ION TIME (s)  

Fig. 9 Transient Thermal Response  

4 of 6  

May 2019  

© Diodes Incorporated  

DMN2050LQ  

Document number: DS41550 Rev. 2 – 2  

DMN2050LQ  

Package Outline Dimensions  

Please see

r the latest version.  

SOT23  

All 7°  

H

SOT23  

Min Max  

GAUGE PLANE  

0.25  

Dim  

A

B

C

D

F

G

H

Typ  

0.40  

1.30  

2.40  

J

0.37  

1.20  

2.30  

0.89  

0.45  

1.78  

2.80  

0.51  

1.40  

2.50  

1.03 0.915  

0.60 0.535  

K

K1  

a

M

A

L

L1  

2.05  

3.00  

1.83  

2.90  

0.05  

J

0.013 0.10  

K

K1  

L

L1  

M

a

0.890 1.00 0.975  

0.903 1.10 1.025  

C

B

0.45  

0.25  

0.61  

0.55  

0.55  

0.40  

0.085 0.150 0.110  

0° 8°

 

—  

D

All Dimensions in mm  

G

F

Suggested Pad Layout  

Please see

r the latest version.  

SOT23  

Y

Dimensions Value

 

(in mm)  

C

X

2.0  

0.8  

Y1  

C

X1  

Y

1.35  

0.9  

Y1  

2.9  

X

X1  

5 of 6  

May 2019  

© Diodes Incorporated  

DMN2050LQ  

Document number: DS41550 Rev. 2 – 2  

DMN2050LQ  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2019, Diodes Incorporated  

6 of 6  

May 2019  

© Diodes Incorporated  

DMN2050LQ  

Document number: DS41550 Rev. 2 – 2  

Mouser Electronics  

Authorized Distributor  

Click to View Pricing, Inventory, Delivery & Lifecycle Information:  

: