Diodes-Incorporated-DMN2055U-7
| Part # | Diodes-Incorporated-DMN2055U-7 |
Download  | Diodes-Incorporated-DMN2055U-7 |
DMN2055U
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
I
D
Max
T
A
= +25°C
4.8A
BV
DSS
R
DS(ON)
Max
Low Input Capacitance
Fast Switching Speed
38m
Ω
@ V
GS
= 4.5V
45m
Ω
@ V
GS
= 2.5V
20V
Low Input/Output Leakage
4.5A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Applications
e3
Solderable per MIL-STD-202, Method 208
General Purpose Interfacing Switch
Power Management Functions
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
SOT23
D
D
G
S
G
S
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2055U-7
DMN2055U-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
AS5 = Product Type Marking Code
YM = Date Code Marking
Y = Last Digit of Year (ex: 8 = 2018)
M = Month (ex: 9 = September)
AS5
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
E
F
G
H
I
J
K
L
M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
1 of 7
March 2018
© Diodes Incorporated
DMN2055U
Document number: DS40487 Rev. 3 – 2
DMN2055U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Unit
V
Gate-Source Voltage
±8
V
V
GSS
4.8
3.8
Steady
State
T
A
= +25°C
T
A
= +85°C
Continuous Drain Current (Note 6)
A
A
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
25
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
W
P
D
0.8
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Steady State
°C/W
W
R
θ
JA
P
D
162
1.2
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
°C/W
°C
R
θ
JA
113
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
1.0
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
0.4
—
—
28
32
0.7
1.0
38
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
45
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
400
55
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
G
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
37
3.7
4.3
0.3
4.8
2.8
2.7
15.4
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
Q
G
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6A
Gate-Source Charge
Gate-Drain Charge
Q
GS
Q
GD
t
D(ON)
t
R
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 10V, V
GS
= 5V,
R
L
= 1.7
Ω
, R
G
= 6
Ω
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
—
—
—
4.4
6.8
1.2
—
—
—
ns
ns
t
F
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= 1.0A, di/dt = 100A/
μ
s
I
F
= 1.0A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
March 2018
© Diodes Incorporated
DMN2055U
Document number: DS40487 Rev. 3 – 2
DMN2055U
20
15
10
8
V
= 8V
GS
V
= 5
.
0
V
DS
V
= 4
.
5
V
GS
V
= 2
.
5
V
GS
V
= 3V
GS
V
= 2V
GS
6
V
= 1
.
5
V
GS
T
= 150°C
J
10
5
T
= 125°C
= 85°C
T
= 25°C
J
J
4
V
V
= 1
.
3
V
T
GS
J
T
= -55°C
J
2
= 1
.
1
V
V
= 1V
GS
GS
0
0
0
0.5
1
1.5
2
2.5
3
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
0.05
0.04
0.03
0.02
0.01
0.00
150
120
90
60
30
0
I
= 3
.
1
A
D
I
= 3
.
6
A
D
V
= 2
.
5
V
GS
V
= 4
.
5
V
GS
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
0.06
0.05
0.04
0.03
0.02
2
V
= 4
.
5
V
DS
V
= 4
.
5
V
GS
= 3
.
1
A
1.8
1.6
1.4
1.2
1
I
D
T
= 150°C
= 125°C
J
T
J
T
= 85°C
J
J
V
= 2
.
5
V
GS
= 3
.
1
A
I
D
T
T
= 25°C
= -55°C
J
0.8
0.6
0.4
0.01
0
0
2
4
6
8
10
–
5
0
–
2
5
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
0
25
50
75 100 125 150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Dr
a
in Current and
T
e
m
p
e
r
a
ture
3 of 7
March 2018
© Diodes Incorporated
DMN2055U
Document number: DS40487 Rev. 3 – 2
DMN2055U
0.06
0.05
0.04
0.03
0.02
0.01
1
0.8
0.6
0.4
0.2
0
V
= 2
.
5
V
GS
= 3
.
1
A
I
D
I
= 1mA
D
V
= 4
.
5
V
= 3
.
1
A
GS
I
I
= 250µA
D
D
0
–
5
0
–
2
5
0
25
50
75 100 125 150
–
5
0
–
2
5
0
25
50
75 100
125 150
T , JUNCTION TEMPERATURE (°C
)
Figure 8 Gate Threshold Variation vs. Junction Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
J
10
8
1000
f=
1
MHz
C
iss
6
T
= 150°C
J
T
= 25°C
100
J
T
= 125°C
= 85°C
J
4
T
= -55°C
C
J
o
s
s
T
J
C
2
r
s
s
0
10
0
0.3
0.6
0.9
1.2
0
5
10
15
20
V
S
D
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
8
100
10
R
D
S
(
on)
Limi
t
e
d
P
= 100µs
W
6
4
2
0
DC
V
I
= 10V
DS
1
0.1
P
= 10s
P
W
= 6A
D
= 1s
W
P
= 100ms
W
T
J
(m ax)
= 150°C
T
C
= 25°C
P
= 10ms
P
W
= 1ms
W
V
GS
= 4.5V
Single Pul
s
e
DUT on 1 * MRP Board
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
8
Q
g
, TO
T
AL GATE CHARGE (nC)
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
4 of 7
March 2018
© Diodes Incorporated
DMN2055U
Document number: DS40487 Rev. 3 – 2
DMN2055U
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
5 of 7
March 2018
© Diodes Incorporated
DMN2055U
Document number: DS40487 Rev. 3 – 2
DMN2055U
Package Outline Dimensions
SOT23
All 7°
H
SOT23
Min Max
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.51
1.40
2.50
1.03 0.915
0.60 0.535
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
6 of 7
March 2018
© Diodes Incorporated
DMN2055U
Document number: DS40487 Rev. 3 – 2
DMN2055U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
March 2018
© Diodes Incorporated
DMN2055U
Document number: DS40487 Rev. 3 – 2
