Diodes-Incorporated-DMN2055UW-13
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DMN2055UW
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
I
D
Max
T
A
= +25°C
3.1A
Low On-Resistance
BV
DSS
R
DS(ON)
Max
Low Input Capacitance
46
mΩ @ V
GS
= 4.5V
53
mΩ @ V
GS
= 2.5V
Fast Switching Speed
20V
2.8A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Mechanical Data
Description and Applications
Case: SOT323
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (Approximate)
General Purpose Interfacing Switch
Power Management Functions
DC-DC Converters
Analog Switch
SOT323
D
D
G
G
S
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2055UW-7
DMN2055UW-13
Case
SOT323
SOT323
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
BA5 = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y= Year (ex: H = 2020)
M = Month (ex: 9 = September)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
G
H
I
J
K
L
M
N
O
P
R
S
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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May 2020
© Diodes Incorporated
DMN2055UW
Document number: DS41990 Rev. 2 – 2
DMN2055UW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Unit
V
Gate-Source Voltage
±8
V
V
GSS
3.1
2.4
T
A
= +25°C
T
A
= +70°C
Steady
State
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
22
A
A
I
DM
I
S
Maximum Body Diode Forward Current (Note 5)
0.8
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
0.52
Unit
W
Total Power Dissipation (Note 5)
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
241
°C/W
W
R
JA
0.65
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
191
°C/W
°C
R
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
20
—
—
—
—
—
—
1.0
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T
C
= +25°C
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
—
1.0
46
53
1
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
V
GS
= 0V, I
S
= 1A
—
35
Static Drain-Source On-Resistance
m
—
—
39
0.7
Diode Forward Voltage
V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
400
55
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
37
3.7
4.3
0.3
4.8
2.8
2.7
15.4
4.4
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
nC
nC
nC
ns
ns
ns
ns
Q
g
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6A
Q
gs
Q
gd
t
D(ON)
t
R
V
DD
= 10V, V
GS
= 5V,
R
L
= 1.7
, R
g
= 6
t
D(OFF)
t
F
Notes:
5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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May 2020
© Diodes Incorporated
DMN2055UW
Document number: DS41990 Rev. 2 – 2
DMN2055UW
20.0
15.0
10.0
5.0
10
8
V
GS
= 2.0V
V
GS
= 2.5V
V
DS
= 5V
V
GS
= 1.8V
V
GS
= 3.0V
V
GS
= 3.5V
6
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 1.5V
4
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= 150
℃
2
V
GS
= 1.3V
V
GS
= 1.0V
T
J
= -55
℃
0
0.0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.06
0.05
0.04
0.03
0.02
0.01
0
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
= 3.1A
I
D
= 3.6A
V
GS
= 2.5V
V
GS
= 4.5V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1.6
1.4
1.2
1
V
GS
= 2.5V, I
D
= 3.1A
V
GS
= 4.5V
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= 4.5V, I
D
= 3.6A
0.8
0.6
0.4
T
J
= -55
℃
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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© Diodes Incorporated
DMN2055UW
Document number: DS41990 Rev. 2 – 2
DMN2055UW
1.5
1.2
0.9
0.6
0.3
0
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= 2.5V, I
D
= 3.1A
I
D
= 1mA
V
GS
= 4.5V, I
D
= 3.6A
I
D
= 250
μ
A
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
20
15
10
5
1000
100
10
f = 1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 85
o
C
T
J
= 125
o
C
T
J
= 150
o
C
C
rss
T
J
= 25
o
C
T
J
= -55
o
C
0
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
8
6
4
2
0
R
DS(ON)
Limited
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
P
W
= 1s
P
W
= 10s
1
V
DS
= 10V, I
D
= 6A
DC
0.1
0.01
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
0.1
1
10
100
0
1
2
3
4
5
6
7
8
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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DMN2055UW
Document number: DS41990 Rev. 2 – 2
DMN2055UW
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
D=Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 237.2
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMN2055UW
Document number: DS41990 Rev. 2 – 2
DMN2055UW
Package Outline Dimensions
SOT323
D
A2
SOT323
Dim Min Max
A1
0.00 0.10
A2
0.90 1.00
Typ
0.05
0.95
0.30
0.11
2.15
2.10
1.30
c
a
A1
e
L
b
c
D
E
0.25 0.40
0.10 0.18
1.80 2.20
2.00 2.20
b
E1
1.15 1.35
e
0.650 BSC
e1
1.20 1.40
1.30
F
L
a
0.375 0.475
0.425
0.25 0.40
0.30
—
E
E1
0
°
8
°
All Dimensions in mm
F
e1
Suggested Pad Layout
SOT323
X
Y
Value
Dimensions
(in mm)
C
G
X
Y
Y1
0.650
1.300
0.470
0.600
2.500
Y1
G
C
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May 2020
© Diodes Incorporated
DMN2055UW
Document number: DS41990 Rev. 2 – 2
DMN2055UW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
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© Diodes Incorporated
DMN2055UW
Document number: DS41990 Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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