Diodes-Incorporated-DMN2056U-13
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DMN2056U
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
Low On-Resistance
I
D
max
BV
DSS
R
DS(on)
max
Low Gate Threshold Voltage
T
A
= +25°C
Low Input Capacitance
38
mΩ @ V
GS
= 4.5V
45
mΩ @ V
GS
= 2.5V
4.0A
3.7A
Fast Switching Speed
20V
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
products/
.
•
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
Mechanical Data
Description and Applications
•
•
Case: SOT23 (Standard)
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
•
•
•
•
•
•
Battery Charging
Power Management Functions
DC-DC Converters
•
•
Portable Power Adaptors
D
D
G
S
G
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMN2056U-7
DMN2056U-13
Case
SOT23 (Standard)
SOT23 (Standard)
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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© Diodes Incorporated
DMN2056U
Document number: DS38480 Rev. 2 – 2
DMN2056U
Marking Information
56U = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: I = 2021)
M = Month (ex: 9 = September)
56U
Date Code Key
Year
2016
……
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
D
……
I
J
K
L
M
N
O
P
R
S
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings
(
@
T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
Value
Units
20
±8
V
V
V
DSS
V
GSS
Gate-Source Voltage
Steady
State
T
A
= +25°C
T
A
= +70°C
4.0
3.2
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
I
D
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
1.0
22
A
A
I
S
I
DM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Value
0.66
192
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
Steady State
Steady State
°C/W
W
R
θ
JA
0.94
136
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
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DMN2056U
Document number: DS38480 Rev. 2 – 2
DMN2056U
Electrical Characteristics
(
@
T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
V
GS
= 0V, I
D
= 250µA
20
V
BV
DSS
I
DSS
1
µA
nA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
0.6
30
1.0
38
V
m
Ω
V
V
GS(th)
R
DS(on)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
V
GS
= 1.5V, I
D
= 2.0A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
34
45
52
85
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
0.7
1.2
339
47
C
iss
C
oss
C
rss
R
G
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
34
2.6
4.3
0.5
0.8
1.8
2.8
8.5
1.7
4.7
0.7
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 10V, V
GS
= 4.5V, I
D
= 3.6A
Total Gate Charge
Q
g
Gate-Source Charge
nC
Q
gs
Q
gd
t
D(on)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= 4.5V, V
DD
= 10V, R
G
= 1
Ω
,
ns
I
D
= 3.6A
Turn-Off Delay Time
t
D(off)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
F
= 3.6A, dI/dt = 100A/
μ
s
I
F
= 3.6A, dI/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN2056U
Document number: DS38480 Rev. 2 – 2
DMN2056U
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
9
8
7
6
5
4
3
2
1
0
V
DS
= 5V
V
GS
= 2.0V
V
GS
= 1.5V
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 1.2V
V
GS
= 0.9V
T
A
= 150
o
C
T
A
= 125
o
C
T
A
= 85
o
C
T
A
= 25
o
C
V
GS
= 1.0V
T
A
= -55
o
C
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
= 3.6A
I
D
= 2.0A
V
GS
= 1.5V
V
GS
= 2.5V
V
GS
= 4.5V
0
2
4
6
8
0
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
2.5
2
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= 4.5V
T
J
= 150
o
C
T
J
= 125
o
C
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
1.5
1
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
GS
= 1.5V, I
D
= 2.0A
0.5
0
-50 -25
0
25
50
75 100
125 150
0
1
2
3
4
5
6
7
8
9
10
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current
and Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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DMN2056U
Document number: DS38480 Rev. 2 – 2
DMN2056U
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 1.5V, I
D
= 2.0A
V
GS
= 2.5V, I
D
= 3.1A
I
D
= 1mA
I
D
= 250µA
V
GS
= 4.5V, I
D
= 3.6A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs Junction
Temperature
1000
10
9
8
7
6
5
4
3
2
1
0
f = 1MHz
V
GS
= 0V
C
iss
100
C
oss
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
C
rss
T
J
= -55
o
C
10
0
5
10
15
20
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
100
10
8
6
4
2
0
R
DS(ON)
Limited
P
W
= 1ms
P
W
= 10ms
P
W
= 100µs
1
DC
P
W
= 10s
P
W
= 1s
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
0.1
0.01
V
DS
= 10V, I
D
= 3.6A
P
W
= 100ms
DUT on 1*MRP Board
V
GS
= 4.5V
0
1
2
3
4
5
6
7
8
0.1
1
10
100
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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DMN2056U
Document number: DS38480 Rev. 2 – 2
DMN2056U
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
θ
JA
= 189
℃
/W
Duty Cycle, D = t1/t2
R
D=Single Pulse
0.0001
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMN2056U
Document number: DS38480 Rev. 2 – 2
DMN2056U
Package Outline Dimensions
SOT23 (Standard)
D
GAUGE PLANE
0.25
SOT23 (Standard)
A1
Dim
A
A1
A2
b
Min
0.90
0.00
0.85
0.30
Max
1.15 1.025
0.10 0.05
1.10 0.975
0.51 0.40
Typ
A2
A
c
a
L1
L
b
c
0.080 0.202
0.11
D
E
E1
e
e1
F
L1
L
a
2.80
2.25
1.20
0.89
1.78
0.40
0.45
0.25
0°
3.00
2.55
1.40
1.03 0.915
2.05 1.83
0.60 0.535
0.61
0.55
8°
2.90
2.40
1.30
E
E1
0.55
0.40
—
All Dimensions in mm
e
e1
F
Suggested Pad Layout
SOT23 (Standard)
Y
Dimensions Value
(in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
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© Diodes Incorporated
DMN2056U
Document number: DS38480 Rev. 2 – 2
DMN2056U
IMPORTANT NOTICE
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,
1.
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY
INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this document.
5.
Diodes
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
) or
other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
Copyright © 2021 Diodes Incorporated
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July 2021
© Diodes Incorporated
DMN2056U
Document number: DS38480 Rev. 2 – 2
