Diodes-Incorporated-DMN2058UW-13
| Part # | Diodes-Incorporated-DMN2058UW-13 |
Download  | Diodes-Incorporated-DMN2058UW-13 |
DMN2058U
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
Low On-Resistance
BV
DSS
R
DS(ON)
Max
I
D
Max
4.6A
Low Gate Threshold Voltage
Low Input Capacitance
35
mΩ @ V
GS
= 10V
40
mΩ @ V
GS
= 4.5V
Fast Switching Speed
20V
Low Input/Output Leakage
4.3A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen- and Antimony-Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish—Matte Tin Annealed over Copper Lead-Frame.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
•
•
•
•
•
•
Battery Charging
Power Management Functions
DC-DC Converters
•
•
Portable Power Adaptors
D
D
G
S
G
S
Top View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN2058U-7
DMN2058U-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
58U = Product Type Marking Code
YM = Date Code Marking
Y
o r Y
̅
= Year (ex: H = 2020)
58U
M or M= Month (ex: 9 = September)
Date Code Key
Year
2016
~
2020
2021
2022
2023
2024
2025
Code
D
~
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 7
September 2020
© Diodes Incorporated
DMN2058U
Document number: DS38468
Rev. 2 – 2
DMN2058U
Maximum Ratings
(@ T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Units
V
V
Gate-Source Voltage
±12
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
4.6
3.7
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
1.2
24
A
A
I
S
I
DM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
Value
0.74
172
Unit
W
P
D
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
Steady State
Steady State
°C/W
W
1.13
111
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@ T
A
= +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
V
GS
= 0V, I
D
= 250µA
20
V
1
BV
DSS
I
DSS
µA
nA
V
DS
= 20V, V
GS
= 0V
±
100
I
GSS
V
GS
=
±
12V, V
DS
= 0V
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
0.4
0.6
27
30
37
49
0.7
1.2
35
40
60
91
1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 6.0A
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 2.5V, I
D
= 4.0A
V
GS
= 1.8V, I
D
= 2.0A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
281
50
C
ISS
C
OSS
C
RSS
R
G
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
39
3.1
3.6
7.7
0.5
0.9
2.0
4.9
9.9
3.3
5.4
0.7
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
G
Q
G
nC
ns
V
DS
= 10V, I
D
= 6.0A
Q
GS
Q
GD
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= 4.5V, V
DD
= 10V, R
G
= 6
Ω
,
I
D
= 6.0A
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
F
= 6.0A, di/dt = 100A/
μ
s
I
F
= 6.0A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
September 2020
© Diodes Incorporated
DMN2058U
Document number: DS38468
Rev. 2 – 2
DMN2058U
20
18
16
14
12
10
8
10
9
V
= 10V
V
= 4
.
5
V
GS
GS
V
= 5
.
0
V
DS
V
= 4
.
0
V
GS
V
= 3
.
0
V
GS
V
= 2V
GS
V
= 2
.
5
V
8
GS
7
6
5
T
= 150°C
4
A
T =
25°C
A
V
= 1
.
5
V
= 1
.
2
V
GS
T
= 125°C
A
T
= -55°C
6
3
2
1
0
A
T
= 85°C
A
4
V
V
GS
2
= 1V
GS
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
0.1
0.09
0.08
0.1
0.09
0.08
0.07
0.06
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
= 1
.
8
V
GS
I
= 6A
D
0.05
0.04
0.03
0.02
0.01
0
V
= 2
.
5
V
GS
I
= 2A
D
V
= 4
.
5
V
GS
V
= 10V
GS
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10
12
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.06
0.05
0.04
0.03
0.02
0.01
0
2.5
2
V
= 10V
GS
V
= 1
.
5
V
GS
T
= 150°C
= 85°C
A
T
= 125°C
V
= 2
.
5
V
= 4A
A
GS
I
= 2A
D
I
D
T
A
1.5
T
= 25°C
V
= 1
.
5
V
= 2A
A
GS
V
= 4
.
5
V
= 6A
I
GS
D
T
= -55°C
1
0.5
0
A
I
D
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN CURRENT (A)
–
5
0
–
2
5
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
0
25
50
75 100
125 150
Figure 5
T
y
pical On-Resistance vs.
Dr
a
in Current and
T
e
m
p
e
r
a
ture
3 of 7
September 2020
© Diodes Incorporated
DMN2058U
Document number: DS38468
Rev. 2 – 2
DMN2058U
0.1
0.09
0.08
0.07
0.06
0.05
1
0.9
0.8
V
= 1
.
5
V
= 2A
GS
0.7
0.6
0.5
0.4
I
D
V
= 2
.
5
V
= 3
.
1
A
GS
I
= 1mA
D
I
D
I
= 250µA
D
0.04
0.03
0.02
V
= 4
.
5
V
GS
0.3
0.2
0.1
0
V
= 4
.
5
V
= 3
.
6
A
GS
I
= 3
.
6
A
D
I
D
0.01
0
–
5
0
–
2
5
0
25
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
50
75 100 125
150
–
5
0
–
2
5
0
25
50
75 100 125
150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
20
18
1000
f=
1
MHz
16
14
12
10
8
C
iss
100
T
= 150°C
A
T =
25°C
A
C
o
s
s
T
= 125°C
A
T
= -55°C
A
6
C
T
= 85°C
A
r
s
s
4
2
10
0
0
0
5
10
15
20
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
Figure 9 Diode Forward Voltage vs. Current
10
100
10
R
D
S
(
on)
Limi
t
e
d
P
= 100µs
8
6
4
2
0
W
P
= 1ms
W
DC
1
P
= 10s
P
W
= 1s
W
V
= 10V
DS
I
= 6A
P
= 100ms
D
W
T
J
(m ax)
= 150°C
T
C
= 25°C
0.1
P
= 10ms
W
V
GS
= 4.5V
Single Pul
s
e
DUT on 1 * MRP Board
0.01
0.1
0
1
2
3
4
5
6
7
8
1
10
100
Q
g
, TO
T
AL GATE CHARGE (nC)
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 11 Gate Charge
Figure 12 SOA, Safe Operation Area
4 of 7
September 2020
© Diodes Incorporated
DMN2058U
Document number: DS38468
Rev. 2 – 2
DMN2058U
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
R
θ
JA
(t) = r(t) *
R
θ
JA
R
θ
JA
= 170°C/W
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
5 of 7
September 2020
© Diodes Incorporated
DMN2058U
Document number: DS38468
Rev. 2 – 2
DMN2058U
Package Outline Dimensions
SOT23
All 7°
H
SOT23
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
6 of 7
September 2020
© Diodes Incorporated
DMN2058U
Document number: DS38468
Rev. 2 – 2
DMN2058U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
September 2020
© Diodes Incorporated
DMN2058U
Document number: DS38468
Rev. 2 – 2
