Diodes-Incorporated-DMN2065UW-7
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NOT RECOMMENDED FOR NEW DESIGN
DMN2065UW
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
Fast Switching Speed
56m
Ω @ V
GS
= 4.5V
65m
Ω @ V
GS
= 2.5V
93m
Ω @ V
GS
= 1.8V
140m
Ω @ V
GS
= 1.5V
2.8A
2.6A
2.2A
1.8A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
20V
Mechanical Data
Description and Applications
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Alloy42 Leadframe.
Solderable per MIL-STD-202, Method 208
e3
General Purpose Interfacing Switch
Power Management Functions
DC-DC Converters
Weight: 0.027 grams (Approximate)
Analog Switch
D
r
a in
SOT323
D
G
a
te
G
S
S o
u
rce
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN2065UW-7
SOT323
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
DMH = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
DMH
M = Month (ex: 9 = September)
Date Code Key
Year
2018
2019
2020
2021
2022
2023
2024
Code
F
G
H
I
J
K
L
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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March 2018
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 2 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2065UW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
Value
20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±12
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
2.8
2.3
A
A
A
A
I
D
I
D
I
D
I
D
Continuous Drain Current (Note 6) V
GS
= 4.5V
Continuous Drain Current (Note 6) V
GS
= 1.8V
3.1
2.6
t<10s
Steady
State
2.2
1.7
2.4
1.9
t<10s
Pulsed Drain Current
(10us Pulse, Duty Cycle=1%)
Maximum Body Diode Forward Current (Note 5)
30
A
A
I
DM
I
S
1.2
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
Unit
W
°C/W
°C/W
W
°C/W
°C/W
°C
Total Power Dissipation (Note 5)
0.43
296
252
0.7
178
151
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
R
JA
t<10s
P
D
R
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
–
–
–
–
–
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
1
μ
A
μ
A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T
C
= +25°C
–
±1
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.35
–
1.0
56
65
93
140
–
V
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 2A
V
GS
= 2.5V, I
D
= 2A
V
GS
= 1.8V, I
D
= 1A
V
GS
= 1.5V, I
D
= 0.5A
V
DS
= 5V, I
D
= 3.8A
V
GS
= 0V, I
S
= 1A
–
–
–
–
–
–
52
59
60
75
7
Static Drain-Source On-Resistance
m
Ω
R
DS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
S
V
|Y
fs
|
V
SD
0.7
1.0
–
–
–
–
–
–
–
–
–
–
400.0
73.8
65.6
5.4
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6A
Gate-Source Charge
0.7
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
1.4
Turn-On Delay Time
3.5
V
DD
= 10V, V
GS
= 5V,
R
L
= 1.7
Ω, R
G
= 6
Ω
Turn-On Rise Time
9.7
ns
Turn-Off Delay Time
23.8
7.2
ns
t
D(OFF)
t
F
Turn-Off Fall Time
ns
Notes:
5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
March 2018
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 2 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2065UW
10
8
5
V
= 8.0V
GS
V
= 4.5V
V
= 5.0V
GS
DS
V
= 3.0V
GS
4
V
= 2.5V
GS
V
= 2.0V
GS
V
= 1.5V
6
4
3
2
GS
T
= 150
C
A
T
= 125
C
2
0
1
0
A
T
= 85
C
A
T
= 25
C
A
V
= 1.2V
GS
T
= -55
C
A
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
V
GS
, GATE-SOURCE VOL
T
A
GE (V)
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
Fig. 2
Typical Transfer Characteristics
0.08
0.07
0.14
0.12
V
= 4.5V
GS
0.06
0.05
0.10
0.08
T
T
= 150
C
A
= 125
C
= 85
C
A
0.04
0.03
0.02
T
A
0.06
0.04
T
= 25
C
A
T
= -55
C
A
0.02
0
0.01
0
0
1
2
3
4
5
1
2
3
4
5
6
7
8
I
D
, DRAIN SOURCE CURRENT (A)
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4
Typical On-Resistance vs.
Drain Current and
T
e
mperature
Fig. 3
Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
0.08
0.07
0.06
V
I
= 2.5V
1.4
1.2
1.0
GS
= 5A
0.05
0.04
0.03
0.02
D
V
I
= 4.5V
GS
= 10A
D
0.8
0.6
0.01
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 6
On-Resistance Variation with
T
e
mperature
Fig. 5
On-Resistance Variation with
T
e
mperature
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March 2018
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 2 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2065UW
1.4
1.2
5
4
1.0
0.8
3
2
0.6
0.4
1
0
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
T
A
, AMBIENT TEMPERATURE
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
0
25
50
75 100
125 150
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
(°C)
1,000
100
10
1
T
=150°C
=125°C
A
T
C
A
iss
T
=85°C
A
100
C
oss
0.1
C
rss
0.01
T
= 25°C
f = 1MHz
A
T
= -55°C
A
10
0.001
0
4
8
12
16
20
0
2
4
6
8
10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
100
10
9
f = 1MHz
R
DS(on)
Limited
8
10
7
6
5
4
3
2
1
DC
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
W
P
= 1ms
0.1
P
= 100µs
W
P
= 10µs
W
0.01
0
0
3
6
9
12
15
0.1
1
10
100
Q
g
, TOTAL GATE CHARGE (nC)
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Gate-Charge Characteristics
Fig. 12 SOA, Safe Operation Area
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March 2018
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 2 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2065UW
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
R
(t) = r(t) * R
JA
300°
C
/W
=
JA
JA
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 13
Transient Thermal Resistance
5 of 7
March 2018
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 2 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2065UW
Package Outline Dimensions
SOT323
D
A2
SOT323
Dim Min Max
A1
0.00 0.10
A2
0.90 1.00
Typ
0.05
0.95
0.30
0.11
2.15
2.10
1.30
c
a
A1
e
L
b
c
D
E
0.25 0.40
0.10 0.18
1.80 2.20
2.00 2.20
b
E1
1.15 1.35
e
0.650 BSC
e1
1.20 1.40
1.30
F
L
a
0.375 0.475
0.425
0.25 0.40
0.30
—
E
E1
0
°
8
°
All Dimensions in mm
F
e1
Suggested Pad Layout
SOT323
X
Y
Value
Dimensions
(in mm)
C
G
X
Y
Y1
0.650
1.300
0.470
0.600
2.500
Y1
G
C
6 of 7
March 2018
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 2 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2065UW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
March 2018
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 2 – 3
