Diodes-Incorporated-DMN2075UDW-7
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DMN2075UDW
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Benefit and Features
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
“Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
I
D
V
(BR)DSS
R
DS(on) max
T
A
= 25°C
2.8A
2.6A
48m
Ω
@ V
GS
= 4.5V
59m
Ω
@ V
GS
= 2.5V
20V
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯
Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
•
•
DC-DC Converters
Power management functions
•
•
Terminals Connections: See Diagram Below
Weight: 0.006 grams (approximate)
D
D
S
D
SOT363
D
G
Top View
Top View
Internal Schematic
Ordering Information
(Note 3)
Part Number
DMN2075UDW-7
Case
SOT363
Packaging
3000/Tape & Reel
Notes:
1. No purposefully added lead.
Marking Information
G22 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
G22
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
September 2011
© Diodes Incorporated
DMN2075UDW
Document number: DS35542 Rev. 1 – 2
DMN2075UDW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Units
V
V
Gate-Source Voltage
±8V
V
GSS
T
T
A
= 25°C
A
= 70°C
Steady
State
2.8
2.2
A
A
A
A
I
D
I
D
I
D
I
D
Continuous Drain Current (Note 5) V
GS
= 4.5V
T
A
= 25°C
T
A
= 70°C
3.1
2.5
t<5s
T
T
A
= 25°C
A
= 70°C
Steady
State
2.6
2.1
Continuous Drain Current (Note 5) V
GS
= 2.5V
T
A
= 25°C
T
A
= 70°C
2.8
2.2
t<5s
20
A
A
Pulsed Drain Current (10
μ
s pulse, Duty cycle = 1%)
Maximum Continuous Body Diode Current
I
DM
I
S
1.0
Thermal Characteristics
Characteristic
Symbol
P
D
Value
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
Total Power Dissipation (Note 4)
0.5
257
213
0.58
221
183
65
Steady state
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
R
θ
JA
t<5s
P
D
Steady state
t<5s
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
R
θ
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
–
–
–
–
–
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
1.0
Zero Gate Voltage Drain Current T
J
= 25°C
Gate-Source Leakage
μ
A
nA
–
±100
I
GSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
0.4
–
40
1.0
48
59
70
100
–
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
–
–
–
–
–
–
V
GS
= 4.5V, I
D
= 3A
45
V
V
V
GS
= 2.5V, I
D
= 2A
GS
= 1.8V, I
D
= 1A
GS
= 1.5V, I
D
= 1A
m
Ω
Static Drain-Source On-Resistance
R
DS (ON)
51
68
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
13
S
V
|Y
fs
|
V
SD
V
DS
= 5V, I
D
= 3A
V
GS
= 0V, I
S
= 1A
0.75
1.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
594.3
64.5
57.7
1.5
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 10V,
Total Gate Charge
7.0
nC
nC
nC
ns
ns
ns
ns
Q
g
Gate-Source Charge
Gate-Drain Charge
0.9
Q
gs
Q
gd
t
D(on)
t
r
I
D
= 3.6A
1.4
Turn-On Delay Time
7.4
Turn-On Rise Time
9.8
V
DD
= 10V, V
GS
= 4.5V,
Turn-Off Delay Time
28.1
6.7
R
L
= 2.78
Ω
, R
G
= 1.0
Ω
t
D(off)
t
f
Turn-Off Fall Time
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing.
2 of 6
September 2011
© Diodes Incorporated
DMN2075UDW
Document number: DS35542 Rev. 1 – 2
DMN2075UDW
10
8
5
4
V
= 8.0V
GS
V
= 5.0V
DS
V
= 3.0V
GS
V
= 2.5V
GS
V
= 2.0V
GS
V
= 1.8V
GS
3
2
6
4
V
= 1.5V
GS
T
= 150
°
C
A
T
A
= 85
°
C
T
= 125
°
C
A
A
T
A
= 25
°
C
1
0
2
0
T
= -55
°
C
V
= 1.2V
GS
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
V
DS
, DRAIN -SOURCE VOL
T
A
GE(V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2
Typical Transfer Characteristics
0.08
0.07
0.06
0.10
0.09
V
= 4.5V
GS
0.08
T
= 150
°
C
A
0.07
0.06
0.05
0.04
0.03
T
= 125
°
C
A
0.05
0.04
0.03
0.02
T
= 85
°
C
A
T
= 25
°
C
A
T
= -55
°
C
A
0.01
0
0.02
0.01
0
2
4
6
8
10
0
1
2
3
4
5
I
D
, DRAIN SOURCE CURRENT (A)
I
D
, DRAIN SOURCE CURRENT
Fig. 4
Typical On-Resistance vs.
Drain Current and
T
e
mperature
Fig. 3
Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
0.08
0.07
V
I
= 2.5V
GS
0.06
0.05
0.04
0.03
0.02
= 1A
D
1.4
1.2
1.0
V
I
= 4.5V
GS
= 5A
D
0.8
0.6
0.01
0
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Fig. 5
On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Fig. 6
On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
°
C)
°
C)
3 of 6
September 2011
© Diodes Incorporated
DMN2075UDW
Document number: DS35542 Rev. 1 – 2
DMN2075UDW
1.4
1.2
5
4
1.0
0.8
3
2
0.6
0.4
1
0
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
0
25
50
75 100
125 150
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1,000
C
T
T
= 150°C
= 125°C
iss
A
A
100
C
oss
T
= 85°C
= 25°C
A
C
rss
T
A
f = 1MHz
T
= -55°C
A
10
0
4
8
12
16
20
0
2
4
6
8
10 12
14 16 18
20
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
100
10
P
= 10µs
W
R
DS(on)
Limited
DC
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
0.1
P
= 1ms
W
P
= 100µs
W
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
4 of 6
September 2011
© Diodes Incorporated
DMN2075UDW
Document number: DS35542 Rev. 1 – 2
DMN2075UDW
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
R
(t) = r(t) * R
θ
JA
= 225°C/W
θ
JA
JA
θ
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 12
Transient Thermal Resistance
Package Outline Dimensions
A
SOT363
Dim
A
B
C
D
F
H
J
K
L
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
B C
0.65 Typ
0.40
1.80
0
0.90
0.25
0.10
0°
0.45
2.20
0.10
1.00
0.40
0.22
8°
H
K
J
M
M
α
L
D
F
All Dimensions in mm
Suggested Pad Layout
C2
C2
Dimensions Value
(in mm)
Z
G
X
2.5
1.3
0.42
0.6
C1
G
Z
Y
C1
C2
1.9
0.65
Y
X
5 of 6
September 2011
© Diodes Incorporated
DMN2075UDW
Document number: DS35542 Rev. 1 – 2
