Diodes-Incorporated-DMN2230U-7
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DMN2230U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
Low On-Resistance
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper
leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
•
•
•
110 m
Ω
@ V
GS
= 4.5V
145 m
Ω
@ V
GS
= 2.5V
230 m
Ω
@ V
GS
= 1.8V
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
“Green” Device (Notes 1, 2 and 3)
•
•
Qualified to AEC-Q101 Standards for High Reliability
SOT23
D
G
S
Top View
Top View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN2230U-7
SOT23
3000/Tape & Reel
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our webs
ite at http://www.diodes.com/products/lead_free/index.php.
3. Product manufactured with Green Molding Compound and does not contain Halogens or Sb
2
O
3
Fire Retardants.
Marking Information
22N = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
22N
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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January 2012
© Diodes Incorporated
DMN2230U
Document number: DS31180 Rev. 5 – 2
DMN2230U
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
V
DSS
V
GSS
I
D
Value
20
Units
V
V
A
A
Gate-Source Voltage
±12
2.0
7
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
I
DM
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
600
Units
mW
°C/W
°C
P
D
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
208
R
θ
JA
-55 to +150
T
J
, T
STG
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol Min
Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
20
⎯
⎯
V
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
1
V
GS
= 0V, I
D
= 10
μ
A
μ
A V
DS
= 20V, V
GS
= 0V
μ
A
I
GSS
±
10
V
GS
=
±
12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
1.0
V
V
GS(th)
⎯
V
DS
= V
CS
, I
D
= 250
μ
A
GS
= 4.5V, I
D
= 2.5A
V
81
113
170
110
145
230
Static Drain-Source On-Resistance
R
DS (ON)
⎯
m
Ω
V
GS
= 2.5V, I
D
= 1.5A
V
GS
= 1.8V, I
D
= 1.0A
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
5
S
V
|Y
fs
|
V
SD
⎯
⎯
⎯
1.1
V
DS
= 5V, I
D
= 2.4A
V
GS
= 0V, I
S
= 1.05A
0.8
188
44
pF
pF
pF
nC
nC
nC
C
iss
C
oss
C
rss
Q
g
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
30
2.3
0.3
0.5
8
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
V
DS
= 10V, I
D
= 11.6A
Turn-On Delay Time
Rise Time
3.8
19.6
8.3
V
DD
= 10V, R
L
= 10
Ω
I
D
= 1A, V
GEN
= 4.5V, R
G
= 6
Ω
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Notes:
5. Device mounted on FR-4 PCB, or minimum recommended pad layout
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
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January 2012
© Diodes Incorporated
DMN2230U
Document number: DS31180 Rev. 5 – 2
DMN2230U
10
8
8
7
6
5
4
3
2
6
4
2
0
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
1.8
1.6
1.4
1.2
1
1
V
= 2.5V
GS
I
= 1.5A
D
V
= 4.5V
GS
I
= 2.5A
D
V
= 1.8V
GS
V
= 2.5V
= 4.5V
0.1
GS
V
GS
V
= 1.8V
GS
I
= 1.0A
D
0.8
0.6
0.01
0.01
0.1
1
10
-50 -25
0
25
50
75
100 125 150
I
D
, DRAIN-SOURCE CURRENT
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4 Normalized Static Drain-Source On-Resistance
vs. Ambient
T
emperature
Fig. 3 On-Resistance
vs.
Drain-Source Current & Gate Voltage
1,000
100
10
1
f = 1MHz
I
= 250µA
0.8
D
0.6
C
iss
0.4
0.2
0
C
oss
C
rss
0
2
4
6
8
10 12
14 16 18 20
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
-50 -25
T
A
, AMBIENT TEMPERATURE (C)
Fig. 5 Gate Threshold Variation with
T
e
mperature
0
25
50
75 100
125 150
Fig. 6 Typical
T
o
tal Capacitance
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January 2012
© Diodes Incorporated
DMN2230U
Document number: DS31180 Rev. 5 – 2
DMN2230U
10
1
10
8
V
I
= 10V
DS
= 11.6A
D
0.1
0.01
6
4
0.001
0.0001
2
0
0
1
2
3
4
5
0.1 0.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
1
Q
g
, TOTAL GATE CHARGE
(nC)
Fig. 8 Gate Charge
100
R
DS(on)
Limited
10
1
P
= 10µs
W
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.1
P
= 100µs
T
T
= 150°C
W
J(max)
= 25°C
A
Single Pulse
DUT on 1 * MRP Board
= 12V
V
GS
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Fig. 9 SOA, Safe Operation Area
Package Outline Dimensions
SOT23
A
Dim
A
B
C
D
F
G
H
J
K
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
–
0.45
0.085 0.18
0° 8°
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
–
H
G
M
K
J
K1
K1
L
M
–
D
0.61
F
L
α
All Dimensions in mm
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January 2012
© Diodes Incorporated
DMN2230U
Document number: DS31180 Rev. 5 – 2
DMN2230U
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
5 of 5
January 2012
© Diodes Incorporated
DMN2230U
Document number: DS31180 Rev. 5 – 2
