Diodes-Incorporated-DMN2400UFB4-7B
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NOT RECOMMENDED FOR NEW DESIGN
DMN2400UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Low On-Resistance
Case: X2-DFN1006-3
Low Gate Threshold Voltage
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
NiPdAu over Copper Leadframe; Solderable
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
e4
Ultra-Small Surface Mount Package
per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
Ultra-Low Package Profile, 0.4mm Maximum Package Height
ESD Protected up to 1.5kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
D
S
X2-DFN1006-3
G
S
D
G
Gate Protection
Diode
Top View
Bottom View
ESD PROTECTED TO 1.5kV
Package Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Marking
NC
NC
Reel Size (inches)
Tape Width (mm)
Tape Pitch (mm)
Quantity per Reel
3,000
DMN2400UFB4-7
DMN2400UFB4-7R
DMN2400UFB4-7B
7
7
7
8
8
8
4
4
2
3,000
10,000
NC
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <
900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
1 of 9
February 2018
© Diodes Incorporated
DMN2400UFB4
Document number: DS32025 Rev. 9 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2400UFB4
Marking Information
From date code 1527 (YYWW),
NC
NC
this changes to:
Top View
Bar Denotes Gate and Source Side
Top View
Dot Denotes Drain Side
DMN2400UFB4-7
NC
Top View
Bar Denotes Gate and Source Side
NC = Part Marking Code
DMN2400UFB4-
7R
NC
Top View
Bar Denotes Gate and Source Side
NC = Part Marking Code
DMN2400UFB4-7B
2 of 9
February 2018
© Diodes Incorporated
DMN2400UFB4
Document number: DS32025 Rev. 9 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2400UFB4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
Value
20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±12
V
V
GSS
T
T
= +25°C
= +85°C
Steady
State
0.75
0.55
A
A
A
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Pulsed Drain Current (Notes 5 & 6)
I
D
3
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
Value
0.47
258
Unit
mW
°C/W
°C
-55 to +150
T
J,
T
STG
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Device mounted on minimum recomm
ended pad layout test board, 10μ
s pulse duty cycle = 1%.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
100
50
V
DS
= 20V, V
GS
= 0V
V
DS
= 5V, V
GS
= 0V
V
GS
= ±3V, V
DS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
—
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
—
—
—
—
—
±100
±1.0
±50
nA
μ
A
μ
A
I
GSS
I
GSS
I
GSS
Gate-Source Leakage
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
—
—
—
—
—
—
—
0.9
0.55
0.75
0.9
V
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 600mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
= 10V, I
D
= 400mA
V
GS
= 0V, I
S
= 150mA
Static Drain-Source On-Resistance
—
Ω
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
1.0
0.7
—
s
|Y
fs
|
V
SD
1.2
V
—
—
—
—
—
—
—
—
—
—
36.0
5.7
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
=16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
4.2
0.5
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
0.07
0.1
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
4.11
3.82
14.8
9.6
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47
Ω, R
g
= 10
Ω
,
I
D
= 200mA
Turn-On Rise Time
ns
Turn-Off Delay Time
ns
t
D(OFF)
t
F
Turn-Off Fall Time
ns
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
3 of 9
February 2018
© Diodes Incorporated
DMN2400UFB4
Document number: DS32025 Rev. 9 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2400UFB4
2.0
1.5
1.5
V
= 4.5V
V
DS
= 5V
GS
V
= 2.5V
GS
)
(
V
= 2.0V
GS
1.0
V
= 1.8V
GS
1.0
I
0.5
,
I
T
= 150°C
A
0.5
0
V
= 1.5V
= 1.2V
GS
T
= 125°C
A
T
= 85°C
T
= 25°C
A
A
T
= -55°C
A
V
GS
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
0.8
0.6
0.4
0.8
0.6
0.4
V
= 4.5V
GS
T =
150°C
A
V
= 1.8V
GS
T =
125°C
A
V
= 2.5V
= 4.5V
GS
T
= 85°C
= 25°C
= -55°C
A
V
T
A
GS
0.2
0
0.2
0
T
A
0
0.4
0.8
1.2
1.6
2
0
0.25
0.50
0.75
1.00
1.25 1.50
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I
D
, DRAIN CURRENT (A)
Fig. 4
Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.8
0.6
1.6
V
= 4.5V
GS
= 1.0A
I
D
1.4
1.2
1.0
V
= 2.5.V
GS
= 500mA
I
D
V
I
= 2.5V
GS
= 500mA
0.4
D
V
= 4.5V
GS
= 1.0A
0.2
0
I
D
0.8
0.6
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE
Fig. 5 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE
Fig. 6 On-Resistance Variation with
T
emperature
0
25
50
75 100
125 150
(°C
)
(°C )
4 of 9
February 2018
© Diodes Incorporated
DMN2400UFB4
Document number: DS32025 Rev. 9 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2400UFB4
2.0
1.2
1.0
1.6
T
=
25°C
A
I
= 1mA
D
0.8
0.6
0.4
1.2
0.8
I
D
=250
A
0.4
0
0.2
0
-50 -25
0
25
50
75 100 125
150
(°C )
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE
Fig. 7 Gate Threshold Variation vs. Ambient
T
emperature
Fig. 8 Diode Forward Voltage vs. Current
60
1,000
100
10
T
T
= 150°C
= 125°C
f = 1MHz
50
A
A
T
40
C
iss
30
20
= 85°C
A
T
= 25°C
T
= -55°C
A
A
10
0
C
oss
C
rss
1
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
100,000
10,000
100,000
10,000
T
= 150°C
A
T
= 150°C
A
T
= 125°C
A
T
= 125°C
A
1,000
100
1,000
100
T
= 85°C
A
T
= 85°C
A
T
= 25°C
A
T
= 25°C
A
T
= -55°C
A
T
= -55°C
A
10
1
10
1
2
4
6
8
10
12
2
4
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 11 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
Fig. 12 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
5 of 9
February 2018
© Diodes Incorporated
DMN2400UFB4
Document number: DS32025 Rev. 9 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2400UFB4
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
JA
JA
R
=
D = 0.02
253°C /W
JA
0.01
D = 0.01
P(pk)
T
t
1
t
2
D = 0.005
D = Single Pulse
– T
= P * R
(t)
J
A
JA
Duty Cycle, D = t
/t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 13 Transient Thermal Response
6 of 9
February 2018
© Diodes Incorporated
DMN2400UFB4
Document number: DS32025 Rev. 9 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2400UFB4
Package Outline Dimensions
X2-DFN1006-3
A
A1
X2-DFN1006-3
Dim Min Max Typ
0.40
A1
0.00 0.05 0.03
0.10 0.20 0.15
b2
0.45 0.55 0.50
A
–
–
Seating Plane
b
D
b
Pin #1 ID
D
E
e
0.95 1.05 1.00
0.55 0.65 0.60
–
–
0.35
L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
E
b2
e
L3
z
–
–
0.40
0.02 0.08 0.05
All Dimensions in mm
z
L2
L3
L1
Suggested Pad Layout
X2-DFN1006-3
C
Y
Dimensions Value
(in mm)
Y1
C
G1
G2
X
X1
Y
0.70
0.30
0.20
0.40
1.10
0.25
0.70
G2
X
G1
Y1
X1
7 of 9
February 2018
© Diodes Incorporated
DMN2400UFB4
Document number: DS32025 Rev. 9 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2400UFB4
Tape Information
EMBOSSED CARRIER TAPE SPECIFICATIONS
8, 12, 16, 24mm EMBOSSED TAPE DIMENSIONS IN mm
Tape Size
8mm
D
E
tmax
P
o
A
o
B
o
K
o
1.50 +0.10
Constant
Dimensions
0.400
See Note 9
1.75
0.10
4.0
0.10
–
0.0
B1
Tape Size
D1
min
K
max
R
min
F
P2
W
Package Type
max
Refer to 8mm Device Tape
Orientation Table
8mm
4.5
0.35
2.4
25
3.5
0.05
2.0
0.05
8.0
0.30
P
Tape Size
8mm
2.0
0.05
DFN1006 (-7B)
4.0
0.10
8.0
0.10
12.0
0.10
16.0
0.10
DFN1006 (-7)
DFN1006 (-7R)
Note: 9.
Ao Bo Ko are determined by component size.
8 of 9
February 2018
© Diodes Incorporated
DMN2400UFB4
Document number: DS32025 Rev. 9 – 3
NOT RECOMMENDED FOR NEW DESIGN
DMN2400UFB4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
9 of 9
February 2018
© Diodes Incorporated
DMN2400UFB4
Document number: DS32025 Rev. 9 – 3
