Diodes-Incorporated-DMN2450UFD-7

DMN2450UFD  

N-CHANNEL ENHANCEMENT MODE MOSFET  

Product Summary  

Features and Benefits  















Low On-Resistance  

I

D  

BV

DSS  

R

DS(ON)  

T

A

= +25°C  

Very Low Gate Threshold Voltage, 1.0V Max  

Low Input Capacitance  

0.6

Ω @ V

GS

= 4.5V  

0.8

Ω @ V

GS

= 2.5V  

1.0

Ω @ V

GS

= 1.8V  

1.6

Ω @ V

GS

= 1.5V  

0.9A  

0.7A  

0.5A  

0.3A  

Fast Switching Speed  

20V  

ESD Protected Gate  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note

3)  

Description and Applications  

Mechanical Data  

This new generation MOSFET is designed to minimize the on-state  

resistance (R

DS(ON)

and yet maintain superior switching  





Case: X1-DFN1212-3  

)

Case Material: Molded Plastic; UL Flammability Classification  

Rating 94V-0  

performance, making it ideal for high efficiency power management  

applications.  





Moisture Sensitivity:

 

Level 1 per J-STD-020  

Terminals: Finish  

–

NiPdAu over Copper Leadframe;  







Power Management Functions  

Battery Operated Systems and Solid-State Relays  

Load Switch  

e4  

Solderable per MIL-STD-202, Method 208  

Terminal Connections: See Diagram  

Weight: 0.005 grams (Approximate)  





D

G

Gate Protection  

S

ESD PROTECTED  

Top View  

Diode  

Bottom View  

Equivalent Circuit  

Pin-out Top View  

Ordering Information

(Note 4)  

Part Number  

DMN2450UFD

-7  

Case  

X1-DFN1212-3  

Packaging  

3,000/Tape & Reel  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

2. See

r more information about Diodes Incorporated’s definitions of Halogen

– and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-

free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

4. For packaging details, go to our website at

Marking Information  

X1-DFN1212-3  

N25 = Product Type Marking Code  

YM = Date Code Marking  

Y = Year (ex: F = 2018)  

N25  

YM  

M = Month (ex: 9 = September)  

Date Code Key  

Year  

2017  

2018  

2019  

2020  

2021  

2022  

2023  

2024  

2025  

2026  

Code  

E

F

G

H

I

J

K

L

M

N

Month  

Code  

Jan  

1

Feb  

2

Mar  

3

Apr  

4

May  

5

Jun  

6

Jul  

7

Aug  

8

Sep  

9

Oct  

O

Nov  

N

Dec  

D

1 of 6  

January 2018  

© Diodes Incorporated  

DMN2450UFD  

Document number: DS39898

 

Rev. 3 – 2  

DMN2450UFD  

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Drain-Source Voltage  

Symbol  

V

DSS  

Value  

20  

Unit  

V

Gate-Source Voltage  

±12  

V

V

GSS  

Steady  

State  

T

A

= +25°C  

T

A

= +70°C  

0.9  

0.7  

A

Continuous Drain Current (Note 6) V

GS

= 4.5V  

I

D  

Pulsed Drain Current (10

μ

s Pulse, Duty Cycle = 1%)  

3.0  

0.8  

A

A

I

DM  

I

S  

Maximum Body Diode Forward Current (Note 6)  

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

P

D  

R

  

Value  

0.45  

Unit  

W

Total Power Dissipation (Note 5)  

Steady State  

Steady State  

Thermal Resistance, Junction to Ambient (Note 5)  

Total Power Dissipation (Note 6)  

280  

0.89  

°C/W  

W

JA  

P

D  

Thermal Resistance, Junction to Ambient (Note 6)  

Thermal Resistance, Junction to Case (Note 6)  

Operating and Storage Temperature Range  

140  

°C/W  

°C/W  

°C  

R

  

JA  

112  

R

  

JC  

-55 to +150  

T

J,

T

STG  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS (Note 7)  

Drain-Source Breakdown Voltage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

20  

—

—

—

—

—

—

V

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

= 250μA  

100  

±1.0  

nA  

µA  

Zero Gate Voltage Drain Current T

J

= +25°C  

Gate-Source Leakage  

V

DS

= 20V, V

GS

= 0V  

I

GSS  

V

GS

= ±4.5V, V

DS

= 0V  

ON CHARACTERISTICS (Note 7)  

Gate Threshold Voltage  

0.45  

—

—

0.35  

0.45  

0.6  

1.0  

0.6  

0.8  

1.0  

1.6  

1.2  

V

Ω

V

V

GS(TH)  

R

DS(ON)  

V

SD  

V

DS

= V

GS

, I

D

= 250

μA  

V

GS

= 4.5V, I

D

= 200mA  

V

GS

= 2.5V, I

D

= 200mA  

V

GS

= 1.8V, I

D

= 100mA  

V

GS

= 1.5V, I

D

= 50mA  

V

GS

= 0V, I

S

= 500mA  

—

Static Drain-Source On-Resistance  

—

—

0.7  

Diode Forward Voltage  

DYNAMIC CHARACTERISTICS (Note 8)  

Input Capacitance  

—

0.7  

—

—

—

—

—

—

—

—

—

—

—

52  

4.8  

3.1  

95  

—

—

—

—

—

—

—

—

—

—

—

pF  

pF  

pF  

Ω

C

iss  

C

oss  

C

rss  

R

g  

V

DS

= 16V, V

GS

= 0V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate Resistance  

V

DS

= 0V, V

GS

= 0V  

0.7  

0.09  

0.05  

3.7  

2.4  

20.9  

5.6  

Total Gate Charge  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

Q

g  

V

GS

= 4.5V, V

DS

= 10V,  

I

D

= 250mA  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

D(ON)  

t

R  

Turn-On Delay Time  

Turn-On Rise Time  

V

DD

= 10V, V

GS

= 4.5V,  

R

L

= 47

Ω, R

G

= 10

Ω

,  

I

D

= 200mA  

Turn-Off Delay Time  

Turn-Off Fall Time  

t

D(OFF)  

t

F  

Notes:  

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.  

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.  

7. Short duration pulse test used to minimize self-heating effect.  

8. Guaranteed by design. Not subject to production testing.  

2 of 6  

January 2018  

© Diodes Incorporated  

DMN2450UFD  

Document number: DS39898

 

Rev. 3 – 2  

DMN2450UFD  

1.5  

1.2  

0.9  

0.6  

0.3  

0.0  

2

1.8  

1.6  

1.4  

1.2  

1

V

= 5.0V  

GS  

= 4.5V  

V

= 5.0V  

DS  

V

GS  

V

= 4.0V  

GS  

V

= 3.0V  

GS  

= 2.5V  

)

A

V

GS  

(

T

N

E

R

R

U

C

V

= 2.0V  

V

= 1.5V  

GS  

GS  

N

I

A

T =

 

150°C  

A

0.8  

R

D

T

= 125°C  

0.4  

0.2  

0

,

A

I

T

= 85°C  

A

V

= 1.2V  

GS  

T

= 25°C  

A

T

= -55°C  

A

0

0.5  

1

1.5  

2

2.5  

3

0

0.5  

1

1.5  

2

2.5  

3

V

DS

, DRAIN-SOURCE VOL

T

A

GE (V)  

V

GS

, GATE-SOURCE VOLTAGE (V)  

Figure 1 Typical Output Characteristics  

Figure 2 Typical Transfer Characteristics  

0.5  

0.4  

0.3  

0.2  

2

1.5  

1

V

= 1.8V  

GS  

I

= 600mA  

D

V

= 2.5V  

GS  

V

V

= 4.5V  

= 5.0V  

GS  

GS  

0.5  

0

I

= 350mA  

D

0

2

4

6

8

10  

12  

0

0.5  

1

1.5  

2

2.5  

3

V

GS

, GATE-SOURCE VOLTAGE (V)  

I

D

, DRAIN-SOURCE CURRENT (A)  

Figure 4 Typical Drain-Source On-Resistance  

vs. Gate-Source Voltage  

Figure 3 Typical On-Resistance vs.  

Drain Current and Gate Voltage  

2

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

)



V

= 4.5V  

GS  

(

E

C

N

T

= 150°C  

= 125°C  

A

A

T

S

T

1.6  

1.2  

0.8  

0.4  

V

= 5.0V  

= 10A  

A

GS  

I

S

I

E

D

T

= 85°C  

R

A

–

N

O

T

T

= 25°C  

E

C

R

U

O

A

A

V

= 2.5V  

GS  

= 300mA  

I

D

= -55°C  

S

–

N

I

A

R

D

,

)

N

O

(

S

D

R

0

0

0.2 0.4 0.6 0.8  

1

1.2 1.4 1.6 1.8  

2

-50 -25  

0

25  

50  

75 100

 

125 150  

I

D

, DRAIN CURRENT (A)  

Figure 5 Typical On-Resistance vs.  

Drain Current and Temperature  

T

J

, JUNCTION TEMPER

A

T

URE (



C)  

Figure 6 On-Resistance Variation with

T

e

mperature  

3 of 6  

January 2018  

© Diodes Incorporated  

DMN2450UFD  

Document number: DS39898

 

Rev. 3 – 2  

DMN2450UFD  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0

1

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

)

V

(

E

G

A

T

L

O

V

= 2.5V  

V

D

GS  

I

= 300mA  

D

L

O

I

= 1mA  

D

H

S

E

R

H

T

I

= 250µA  

D

V

= 5.0V  

GS  

E

I

= 10A  

D

T

A

G

,

)

h

t

(

S

V

G  

-50 -25  

0

25  

50  

75 100

 

125 150  

-50 -25  

0

25  

50  

75 100

 

125 150  

T

J

, JUNCTION TEMPERATURE (°C

 

)  

T

J

, JUNCTION TEMPER

A

T

URE (



C)  

Figure 8 Gate Threshold Variation vs. Junction Temperature  

100  

Figure 7 On-Resistance Variation with

T

e

mperature  

2

1.8  

1.6  

1.4  

1.2  

1

C

iss  

)

A

(

T

N

E

R

R

U

C

10  

E

C

R

U

O

S

C

0.8  

0.6  

0.4  

0.2  

0

oss  

T

= 150°C  

A

C

rss  

T

= 125°C  

A

T

= 85°C  

,

A

I

S  

T

= 25°C  

A

T

= -55°C  

A

f = 1MHz  

1

0

0.3  

0.6  

0.9  

1.2  

1.5  

0

2

4

6

8

10 12 14 16 18 20  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Figure 10 Typical Junction Capacitance  

V

SD

, SOURCE-DRAIN VOLTAGE (V)  

Figure 9 Diode Forward Voltage vs. Current  

10  

8

V

= 10V  

DS  

I

= 250mA  

D

6

4

2

0

0

0.3  

0.6  

0.9  

1.2  

1.5  

1.8  

Q

g

, TOTAL GATE CHARGE (nC)  

Figure 11 Gate Charge  

4 of 6  

January 2018  

© Diodes Incorporated  

DMN2450UFD  

Document number: DS39898

 

Rev. 3 – 2  

DMN2450UFD  

1

D = 0.7  

D = 0.5  

D = 0.3  

0.1  

D = 0.1  

D = 0.9  

D = 0.05  

D = 0.02  

R

(t) = r(t) * R  

R

θ

JA

(t) = r(t) * R

θ

JA  



JA  



JA  

/W  

R

= 261

癈

 

R

θ

JA

= 261

℃

/W  



JA  

0.01

D = 0.01  

P(pk)  

t

1

D = 0.005  

D = Single Pulse  

t

2

T

– T

 

= P * R

 

(t)  

J

A



JA  

Duty Cycle, D = t

 

/t  

1

2

0.001  

0.000001 0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1,000  

t , PULSE DUR

A

T

ION TIME (s)  

t

1

,

1

PULSE DURATION TIME (s)  

Figu 12

 

Transient Thermal Response  

Fi

g

r

e

. 12 Transient Thermal Response  

Package Outline Dimensions  

Please see

r the latest version.  

X1-DFN1212-3  

A

A3  

X1-DFN1212-3  

Dim Min Max

 

Typ  

A1  

Seating Plane  

A

A1  

A3  

b

b1  

D

0.47 0.53

 

0.50  

0

–

0.05 0.02  

0.13  

–

D

e

0.27 0.37

 

0.32  

0.17 0.27

 

0.22  

1.15 1.25

 

1.20  

1.15 1.25

 

1.20  

E

b1( 2x)  

e

–

–

0.80  

L

0.25 0.35

 

0.30  

E

All Dimensions in mm  

L( 3x)  

b

Suggested Pad Layout  

Please see

r the latest version.  

X1-DFN1212-3  

X

Dimensions Value

 

(in mm)  

Y

C

X

X1  

Y

Y1  

Y2  

0.80  

0.42  

0.32  

0.50  

0.50  

1.50  

X1  

(2x)  

Y2  

Y1  

(2x)  

C

5 of 6  

January 2018  

© Diodes Incorporated  

DMN2450UFD  

Document number: DS39898

 

Rev. 3 – 2  

DMN2450UFD  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2018, Diodes Incorporated  

6 of 6  

January 2018  

© Diodes Incorporated  

DMN2450UFD  

Document number: DS39898

 

Rev. 3 – 2