Diodes-Incorporated-DMN26D0UDJ-7
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DMN26D0UDJ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
Dual N-Channel MOSFET
Low On-Resistance:
V
(BR)DSS
R
DS(on)
T
A
= +25°C
240mA
3.0
Ω
@ V
GS
= 4.5V
6.0
Ω
@ V
GS
= 1.8V
.
.
.
.
3.0
Ω
@ 4.5V
4.0
Ω
@ 2.5V
20V
180mA
Description
Very Low Gate Threshold Voltage, 1.05V Max
Low Input Capacitance
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(on)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate (HBM 300V)
Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
DC-DC Converters
Power Management Functions
Mechanical Data
Case: SOT963
Case Material: Molded Plastic, “Green” Molding Compound
;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
–
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (Approximate)
D
1
G
2
S
2
SOT963
D
2
G
1
S
1
ES
D
P
ROTECTED
Top View
Top View
Schematic and Transistor Diagram
Ordering Information
(Note 4)
Part Number
DMN26D0UDJ-7
Case
SOT963
Packaging
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
(Note 5)
D
1
G
2
S
2
M1 = Product Type Marking Code
M1
D
2
G
1
S
1
Note:
5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
1 of 5
December 2014
© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 9 – 2
DMN26D0UDJ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Symbol
V
DSS
Value
20
Unit
V
Gate-Source Voltage
V
V
GSS
10
Steady
Continuous Drain Current (Note 6) V
GS
= 4.5V
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
240
190
mA
I
D
Steady
Continuous Drain Current (Note 6) V
GS
= 1.8V
State
180
140
mA
mA
I
D
805
Pulsed Drain Current – T
P
= 10µs
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
P
D
Value
300
409
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
R
θ
JA
-55 to +150
T
J
, T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
20
V
BV
DSS
I
DSS
500
1.7
V
GS
= 0V, I
D
= 100
μ
A
V
DS
= 20V, V
GS
= 0V
V
DS
= 2.6V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
@ T
J
= +25°C
@T
J
= +85°C
(Note 8)
nA
µA
1
100
μ
A
nA
Gate-Body Leakage
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.45
0.8
1.8
2.5
3.4
4.7
9.5
240
0.8
1.05
3.0
4.0
6.0
10.0
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 1.8V, I
D
= 20mA
V
GS
= 1.5V, I
D
= 10mA
V
GS
= 1.2V, I
D
= 1mA
V
DS
=10V, I
D
= 0.1A
V
GS
= 0V, I
S
= 10mA
180
0.5
Static Drain-Source On-Resistance
Ω
R
DS (ON)
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
mS
V
1.0
|Y
fs
|
V
SD
14.1
2.9
pF
pF
pF
C
iss
C
oss
C
rss
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
1.6
SWITCHING CHARACTERISTICS, V
GS
= 4.5V (Note 8)
Turn-On Delay Time
Rise Time
3.8
7.9
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5V, V
DD
= 10V
I
D
= 200mA, R
G
= 2.0
Ω
ns
Turn-Off Delay Time
Fall Time
13.4
15.2
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design, not subject to production testing.
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December 2014
© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 9 – 2
DMN26D0UDJ
0.8
0.7
0.4
0.3
V =
-10V
DS
V
= 8V
V
= 4.5V
GS
GS
T
= -55°C
A
0.6
0.5
V
= 3.0V
= 2.5V
T
= 25°C
GS
A
T
= 85°C
A
T
= 125°C
A
V
0.4
0.3
0.2
0.2
0.1
0
GS
T
= 150°C
A
V
= 2.0V
GS
0.1
0
V
= 1.5V
GS
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Fig. 1 Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Typical Transfer Characteristic
10
9
4
3
V
= 4.5V
GS
8
7
6
5
4
T
= 150°C
A
V
= 1.2V
GS
2
T
= 125°C
A
T
= 85°C
A
V
= 1.5V
T
= 25°C
3
2
GS
A
1
0
V
= 1.8V
= 2.5V
GS
T
= -55°C
A
V
V
GS
1
0
= 4.5V
GS
1
10
100
1,000
0.01
0.1
1
I
D
, DRAIN-SOURCE CURRENT (mA)
Fig. 3
Typical On-Resistance
vs. Drain Current and Gate Voltage
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and
T
e
mperature
2.0
1.8
4.0
3.5
1.6
V
I
= 4.5V
3.0
GS
= 500mA
D
1.4
1.2
1.0
2.5
2.0
1.5
V
= 2.5V
GS
I
= 150mA
V
= 2.5V
GS
= 150mA
D
I
D
0.8
V
= 4.5V
GS
1.0
0.5
I
= 500mA
D
0.6
0.4
-50 -25
0
25
50
75 100
125 150
-50 -25
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with
T
emperature
0
25
50
75 100
125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with
T
e
mperature
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December 2014
© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 9 – 2
DMN26D0UDJ
0.8
0.7
1.4
1.2
T
= 25°C
0.6
0.5
A
1.0
0.8
0.6
I
= 1mA
D
0.4
0.3
I
= 250µA
D
0.4
0.2
0
0.2
0.1
0
0
0.2 0.4
0.6 0.8
1
1.2 1.4
1.6
-50 -25
0
25
50
75 100
125 150
T
A
, AMBIENT TEMPERATURE (°C)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
Fig. 8 Diode Forward Voltage vs. Current
20
10,000
1,000
f = 1MHz
T
= 150°C
A
15
T
= 125°C
A
C
iss
100
10
5
T
= 85°C
A
10
1
T
= 25°C
C
A
oss
T
= -55°C
A
C
rss
0
0.1
0
5
10
15
20
0
2
4
6
8
10 12 14 16 18
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical
T
o
tal Capacitance
Package Outline Dimensions
D
e1
SOT963
Dim Min
Max Typ
0.50 0.45
0.05
L
A
A1
c
0.40
0
–
E
E1
0.120 0.180
0.150
D
E
E1
L
b
0.95
0.95
0.75
0.05
0.10
1.05 1.00
1.05 1.00
0.85 0.80
0.15 0.10
0.20 0.15
e
c
b (6 places)
e
e1
0.35 Typ
0.70 Typ
A
All Dimensions in mm
A1
4 of 5
December 2014
© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 9 – 2
DMN26D0UDJ
Suggested Pad Layout
C
C
Dimensions Value
(in mm)
C
X
Y
0.350
0.200
0.200
1.100
Y1
Y1
Y (6X)
X
(
6X)
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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December 2014
© Diodes Incorporated
DMN26D0UDJ
Document number: DS31481 Rev. 9 – 2
