Diodes-Incorporated-DMN3009LFVW-7
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DMN3009LFVW
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (SWP) (Type UX)
Product Summary
Features and Benefits
Low R
DS(ON)
–
ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
I
D
max
BV
DSS
R
DS(ON)
max
T
C
= +25°C
5.0m
@ V
GS
= 10V
7.4m
@ V
GS
= 4.5V
60A
50A
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
®
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: PowerDI
3333-8 (SWP) (Type UX)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Backlighting
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Power Management Functions
DC-DC Converters
Weight: 0.072 grams (Approximate)
PowerDI3333-8 (SWP) (Type UX)
D
D
D
D
D
G
G
S
S
S
S
Pin1
Bottom View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMN3009LFVW-7
DMN3009LFVW-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8 (SWP) (Type UX)
PowerDI3333-8 (SWP) (Type UX)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SW1 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digit of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
SW1
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
December 2017
© Diodes Incorporated
DMN3009LFVW
Document number: DS39290
Rev. 1 – 2
DMN3009LFVW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
T
C
= +70°C
60
48
A
I
D
Continuous Drain Current (Note 7) V
GS
= 10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH (Note 8)
90
60
90
33
58
A
A
I
DM
I
S
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.1mH (Note 8)
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
1.0
126
Unit
W
Total Power Dissipation (Note 5)
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
JA
2.0
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
62
R
JA
°C/W
°C
4.6
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1
—
2.5
5.0
7.4
1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 15A
V
GS
= 0V, I
S
= 1A
—
—
—
3.5
4.9
0.7
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2,000
315
247
2.2
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0
V
,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0
V
, f =
1
MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
42
Q
g
V
DS
= 15V, I
D
= 15A
4.7
7.4
3.9
4.1
31
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
G
= 3.3
Ω
, I
D
= 15A
Turn-Off Delay Time
t
D(OFF)
t
F
15
Turn-Off Fall Time
15
Body Diode Reverse Recovery Time
t
RR
I
F
= 15A, di/dt = 1
00A/μs
6.0
Body Diode Reverse Recovery Charge
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
= +25°C.
J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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December 2017
© Diodes Incorporated
DMN3009LFVW
Document number: DS39290
Rev. 1 – 2
DMN3009LFVW
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
=3.0V
V
GS
=4.0V
V
DS
=5V
V
GS
=4.5V
V
GS
=2.5V
V
GS
=10.0V
150
℃
125
℃
85
℃
25
℃
V
GS
=2.0V
-55
℃
0
0.0
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.005
0.0045
0.004
0.02
0.016
0.012
0.008
0.004
0
V
GS
=4.5V
0.0035
0.003
V
GS
=10V
I
D
=15A
0.0025
0.002
0
4
8
12
16
20
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
150
℃
125
℃
V
GS
=10V, I
D
=30A
85
℃
25
℃
V
GS
=4.5V, I
D
=15A
-55
℃
0.8
0.6
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
Figure 6. On-Resistance Variation with Temperature
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December 2017
© Diodes Incorporated
DMN3009LFVW
Document number: DS39290
Rev. 1 – 2
DMN3009LFVW
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
2
1.7
1.4
1.1
0.8
0.5
0.2
I
D
=1mA
V
GS
=4.5V, I
D
=15A
I
D
=250µA
V
GS
=10V, I
D
=30A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
100000
10000
1000
100
V
GS
=0V
150
℃
125
℃
85
℃
25
℃
T
A
=85
℃
10
T
A
=150
℃
T
A
=25
℃
T
A
=125
℃
T
A
=-55
℃
0
1
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
10000
1000
100
10
8
f=1MHz
6
C
iss
4
V
DS
=15V, I
D
=15A
C
oss
2
C
rss
0
0
5
10 15 20 25 30 35 40 45
Q
g
(nC)
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
Figure 12. Gate Charge
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December 2017
© Diodes Incorporated
DMN3009LFVW
Document number: DS39290
Rev. 1 – 2
DMN3009LFVW
1000
100
10
R
DS(ON)
Limited
P
W
=1ms
P
W
=100µs
P
W
=10ms
1
T
J(Max)
=150
℃
T
C
=25
℃
Single Pulse
P
W
=100ms
P
W
=1s
P
W
=10s
0.1
DUT on 1*MRP Board
V
GS
=10V
DC
10
0.01
0.01
0.1
1
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=130
℃
/W
Duty Cycle, D=t1/ t2
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
5 of 7
December 2017
© Diodes Incorporated
DMN3009LFVW
Document number: DS39290
Rev. 1 – 2
DMN3009LFVW
Package Outline Dimensions
PowerDI3333-8 (SWP) (Type UX)
D
A
D1
A1
PowerDI3333-8 (SWP)
(Type UX)
Dim Min
Max Typ
A
0.75 0.85 0.80
A1
0.00 0.05
—
E1
E
b
c
0.25 0.40 0.32
0.10 0.25 0.15
3.20 3.40 3.30
D
D1
2.95 3.15 3.05
D2
2.30 2.70 2.50
0
E
3.20 3.40 3.30
c
Detail A
E1
2.95 3.15 3.05
E2
1.60 2.00 1.80
E3
0.95 1.35 1.15
E4
0.10 0.30 0.20
Detail A
L
e
k
L
θ
0.65
E4
E3
k
0.50 0.90 0.70
0.30 0.50 0.40
E2
0
°
12
°
10
°
0.050
All Dimensions in mm
D2
0.150
L
e
b
Suggested Pad Layout
PowerDI3333-8 (SWP) (Type UX)
X3
Dimensions Value
(in mm)
X1
X2
C
0.650
0.420
0.420
0.230
2.600
3.500
0.700
0.550
1.650
0.600
2.450
0.400
3.700
Y1
Y2
X
X1
X2
X3
X4
Y
Y4
Y3
Y5
Y1
Y2
Y3
Y4
Y5
Y6
Y6
X4
Y
X
C
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December 2017
© Diodes Incorporated
DMN3009LFVW
Document number: DS39290
Rev. 1 – 2
DMN3009LFVW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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December 2017
© Diodes Incorporated
DMN3009LFVW
Document number: DS39290
Rev. 1 – 2
