Diodes-Incorporated-DMN3010LK3-13
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DMN3010LK3
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
T
C
= +25°C
43A
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
V
(BR)DSS
R
DS(ON)
9.5m
Ω
@ V
GS
= 10V
11.5m
Ω
@ V
GS
= 4.5V
30V
39A
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
and yet maintain superior switching
)
Mechanical Data
performance, making it ideal for high efficiency power management
applications.
Case: TO252-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.33 grams (approximate)
Applications
Backlighting
DC-DC Converters
Power Management Functions
Equivalent Circuit
Top View
Pin Out Top View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN3010LK3-13
TO252
2500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
=Manufacturer’s Marking
N3010L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 to 53)
N3010L
YYWW
1 of 6
April 2014
© Diodes Incorporated
DMN3010LK3
Document number: DS36762
Rev. 2 – 2
DMN3010LK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH
±20
V
V
GSS
T
C
= +25°C
T
C
= +70°C
T
A
= +25°C
43
34
A
A
I
D
13.1
10.5
I
D
I
DM
I
AR
T
A
= +70°C
90
28
40
A
A
Avalanche Energy (Notes 7) L = 0.1mH
mJ
E
AR
Thermal Characteristics
Characteristic
Symbol
Value
1.6
78
31
2.4
51
Units
W
Total Power Dissipation (Note 5)
P
D
Steady State
t<10s
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
R
θ
JA
P
D
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
R
θ
JC
21
4.7
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
—
—
—
—
8
2.5
9.5
V
m
Ω
V
V
GS(th)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μ
A
V
V
GS
= 10V, I
D
= 18A
GS
= 4.5V, I
D
= 16A
Static Drain-Source On-Resistance
10
11.5
1.0
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
0.75
V
GS
= 0V, I
S
= 1A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2075
190
138
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
16.1
37
Total Gate Charge
(V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
V
DS
= 15V, I
D
= 18A
6.1
Q
gs
Q
gd
t
D(on)
t
r
5.9
Gate-Drain Charge
4.5
Turn-On Delay Time
19.6
31
Turn-On Rise Time
DS
= 15V, V
GS
= 10V,
Turn-Off Delay Time
R
L
= 0.83
Ω
, R
GEN
= 3
Ω
,
t
D(off)
t
f
10.7
13.7
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
rr
I
F
=15A, di/dt=500A/µs
18.3
nC
Q
rr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 6
April 2014
© Diodes Incorporated
DMN3010LK3
Document number: DS36762
Rev. 2 – 2
DMN3010LK3
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
V
= 5.0V
DS
V
= 10V
GS
V
= 3.0V
V
= 5.0V
GS
GS
V
= 4.5V
GS
V
= 4.0V
GS
V
= 3.5V
GS
T
= 150°C
A
15
10
5
T
= 125°C
A
V
= 2.8V
GS
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
V
= 2.5V
GS
0.0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0.01
0.03
0.027
0.024
0.021
0.018
0.015
0.012
0.009
0.006
0.009
0.008
0.007
0.006
0.005
0.004
V
V
= 4.5V
= 10V
GS
GS
I
= 18A
D
I
= 16A
D
2
4
6
8
10
12
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Transfer Characteristic
0.02
2
1.8
1.6
1.4
1.2
1
V
= 4.5V
GS
0.018
0.016
0.014
0.012
V
= 4.5V
= 5A
T
= 150°C
= 125°C
GS
A
I
D
T
A
T
T
T
= 85°C
A
V
= 10V
= 10A
0.01
0.008
0.006
0.004
0.002
0
GS
= 25°C
A
A
I
D
= -55°C
0.8
0.6
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 6 On-Resistance Variation with
T
emperature
0
25
50
75 100
125 150
0
5
10
15
20
25
30
C)
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and
T
e
mperature
3 of 6
April 2014
© Diodes Incorporated
DMN3010LK3
Document number: DS36762
Rev. 2 – 2
DMN3010LK3
0.02
0.018
0.016
0.014
0.012
0.01
2.5
2
I
= 1mA
D
I
= 250µA
D
V
= 4.5V
= 5A
GS
1.5
1
I
D
0.008
0.006
0.004
0.002
0
V
= 10V
GS
I
= 10A
D
0.5
0
-50 -25
0
25
50
75 100
125 150
C)
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 7 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
mperature
10000
30
25
20
15
10
5
C
iss
T
= 150°C
A
1000
T
= 125°C
A
T
A
= 85°C
A
C
T
A
= 25°C
oss
T
= -55°C
100
C
rss
f = 1MHz
0
0
10
0
5
10
15
20
25
30
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Junction Capacitance
10
8
V
I
= 15V
DS
= 18A
D
6
4
2
0
0
5
10
15
20
25
30
35
40
Q
g
, TO
T
A
L GATE CHARGE (nC)
Figure 11 Gate Charge
4 of 6
April 2014
© Diodes Incorporated
DMN3010LK3
Document number: DS36762
Rev. 2 – 2
DMN3010LK3
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
JA
(t) = r(t) * R
R
JA
= 72°C/W
JA
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
TO252
Dim Min
Max Typ
2.19 2.39 2.29
E
b3
A
c2
A
A1
0.00 0.13 0.08
A2
0.97 1.17 1.07
L3
D
b
0.64 0.88
0.783
E1
b2
0.76 1.14 0.95
b3
5.21 5.46 5.33
c2
0.45 0.58
0.531
A2
H
D
6.00 6.20 6.10
D1
5.21
e
2.286
L4
A1
E
6.45 6.70 6.58
E1
4.32
L
H
L
9.40 10.41 9.91
1.40 1.78 1.59
e
3X b
2X b2
a
L3
0.88 1.27 1.08
L4
0.64 1.02 0.83
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
X2
Dimensions
Value (in mm)
Z
11.6
1.5
7.0
2.5
7.0
6.9
2.3
X1
X2
Y1
Y2
C
Y2
Z
C
Y1
E1
X1
E1
5 of 6
April 2014
© Diodes Incorporated
DMN3010LK3
Document number: DS36762
Rev. 2 – 2
DMN3010LK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
6 of 6
April 2014
© Diodes Incorporated
DMN3010LK3
Document number: DS36762
Rev. 2 – 2
