Diodes-Incorporated-DMN3016LFDE-13
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DMN3016LFDE
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
0.6mm Profile
–
Ideal for Low Profile Applications
PCB Footprint of 4mm
2
I
D
max
BV
DSS
R
DS(ON)
max
T
A
= +25°C
Low Gate Threshold Voltage
12m
Ω @ V
GS
= 10V
16m
Ω @ V
GS
= 4.5V
10A
Low On-Resistance
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
8.5A
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
Battery Management Application
Power Management Functions
DC-DC Converters
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
(Type E)
D
6 D
5 D
4 S
D 1
D 2
G
S
G 3
Bottom View
Pin Out
S
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN3016LFDE-7
DMN3016LFDE-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type E)
U-DFN2020-6 (Type E)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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February 2020
© Diodes Incorporated
DMN3016LFDE
Document number: DS35900 Rev. 3 – 2
DMN3016LFDE
Marking Information
Site 1
NR = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
M = Month (ex: 9 = September)
Date Code Key
Year
2012
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
Z
…
H
I
J
K
L
M
N
O
P
R
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2
NR = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
N
Date Code Key
Year
2012
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
2
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
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February 2020
© Diodes Incorporated
DMN3016LFDE
Document number: DS35900 Rev. 3 – 2
DMN3016LFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
10
8
A
A
I
D
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 10V
12
9
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
2.5
90
22
24
A
A
I
S
I
DM
I
AS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.73
0.47
171
121
2.02
1.30
62
Unit
T
A
= +25°C
Total Power Dissipation (Note 5)
T
A
= +70°C
W
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
t<10s
°C/W
W
R
JA
P
D
T
A
= +25°C
Total Power Dissipation (Note 6)
T
A
= +70°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s
42
°C/W
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
9.3
R
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.4
—
—
—
—
—
8
2.0
12
16
—
V
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 11A
V
GS
= 4.5V, I
D
= 9A
V
DS
= 5V, I
D
= 12A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
m
Ω
12
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
32
S
V
|Y
fs
|
V
SD
0.70
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1415
119
82
—
—
—
3.2
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
2.6
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
11.3
25.1
3.5
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DS
= 15V, I
D
= 12A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
3.6
Turn-On Delay Time
4.8
Turn-On Rise Time
16.5
26.1
5.6
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.25
Ω
, R
G
= 3
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
12.3
10.4
ns
t
RR
I
F
= 12A, di/dt = 500A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN3016LFDE
Document number: DS35900 Rev. 3 – 2
DMN3016LFDE
30
25
30
25
V
= 10V
GS
V
= 5.0V
DS
V
= 4.5V
GS
= 4.0V
V
GS
20
20
15
10
V
= 3.5V
GS
V
= 3.0V
GS
15
10
T
= 150
C
A
T
= 125
C
A
T
= 85
C
A
5
0
5
0
V
GS
= 2.5V
T
= 25
C
A
T
= -55
C
A
0
0.5
1.0
1.5
2.0
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 2
Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
0.04
0.03
0.04
0.03
V
= 4.5V
GS
T
= 125
C
T
= 150
C
A
0.02
0.01
0
0.02
0.01
0
A
T
= 85
C
= 25
C
= -55
C
A
T
T
A
A
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
, DRAIN SOURCE CURRENT (A)
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4
Typical On-Resistance vs.
Drain Current and
T
e
mperature
Fig. 3
Typical On-Resistance vs.
Drain Current and Gate Voltage
V
I
= 4.5V
GS
= 5A
D
V
I
= 10V
GS
= 10A
D
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Fig. 6
On-Resistance Variation with
T
e
mperature
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 5
On-Resistance Variation with
T
e
mperature
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© Diodes Incorporated
DMN3016LFDE
Document number: DS35900 Rev. 3 – 2
DMN3016LFDE
30
25
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100
125 150
V
SD
, SOURCE-DRAIN VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 8 Diode Forward Voltage vs. Current
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
2,000
10
f = 1MHz
1,800
1,600
1,400
1,200
1,000
800
9
8
7
6
5
4
3
2
f = 1MHz
C
iss
600
400
C
oss
200
0
1
0
C
rss
0
5
10
15
20
25
30
0
5
10
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
100
90
Single Pulse
R
R
T
= 61
C/W
JA
= r
* R
80
70
60
50
40
30
20
10
JA(t)
(t)
JA
– T
= P * R
J
A
JA(t)
0
0.0001 0.001
0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
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© Diodes Incorporated
DMN3016LFDE
Document number: DS35900 Rev. 3 – 2
DMN3016LFDE
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
(t) = r(t) * R
θ
JA
θ
JA
R
= 61
℃
/W
θ
JA
Duty Cycle, D = t1 / t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
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© Diodes Incorporated
DMN3016LFDE
Document number: DS35900 Rev. 3 – 2
DMN3016LFDE
Package Outline Dimension
U-DFN2020-6 (Type E)
U-DFN2020-6
Type E
Dim Min Max
A3
A1
K1
Typ
0.60
0.03
0.15
0.30
A
A
A1
A3
b
0.57 0.63
0
0.05
D
0.25 0.35
b1
0.185 0.285
0.235
D
D2
E
E2
e
1.95 2.05
0.85 1.05
1.95 2.05
1.40 1.60
2.00
0.95
2.00
1.50
0.65
0.30
0.87
0.305
0.225
0.20
b1
D2
E
E2
L1
L(2X)
L
0.25 0.35
0.82 0.92
K2
L1
K1
K2
Z
Z(4X)
e
b(6X)
All Dimensions in mm
Suggested Pad Layout
U-DFN2020-6 (Type E)
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Dimensions
C
X
X1
X2
Y
Y1
Y2
Y3
X2
Y1
Y3 Y2
X1
Y (2x)
X(6x)
C
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February 2020
© Diodes Incorporated
DMN3016LFDE
Document number: DS35900 Rev. 3 – 2
DMN3016LFDE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
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February 2020
© Diodes Incorporated
DMN3016LFDE
Document number: DS35900 Rev. 3 – 2
