Diodes-Incorporated-DMN3016LK3-13
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DMN3016LK3
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
I
D
V
(BR)DSS
R
DS(on)
T
C
= +25°C
Fast Switching Speed
37.8A
32.8A
12m
Ω @ V
GS
= 10V
16m
Ω @ V
GS
= 4.5V
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
30V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Applications
e3
Backlighting
Solderable per MIL-STD-202, Method 208
DC-DC Converters
Power Management Functions
Weight: 0.33 grams (Approximate)
D
D
D
TO252
G
G
S
S
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Notes 4)
Product
Case
Packaging
DMN3016LK3-13
TO252
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
= Manufacturer’s Marking
N3016L= Product Type Marking Code
.
YYWW = Date Code Marking
N3016L
YYWW
YY = Year (ex: 14 = 2014)
WW = Week (01 – 53)
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November 2014
© Diodes Incorporated
DMN3016LK3
Document Number DS37206 Rev. 4 – 2
DMN3016LK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
A
= +25°C
Steady
State
12.4
10
A
A
A
I
D
I
D
I
D
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
Steady
State
37.8
30.3
Continuous Drain Current (Note 6) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
17
13.6
t<10s
Maximum Body Diode Continuous Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
2
A
A
I
S
90
22
24
I
DM
I
AS
A
Avalanche Energy
(Note 7) L = 0.1mH
mJ
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.6
Units
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
R
θ
JA
P
D
1.0
75
T
A
= +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
34
2.8
1.8
46
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
24
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
3.1
R
θ
JC
-55 to +150
T
J,
T
STG
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November 2014
© Diodes Incorporated
DMN3016LK3
Document Number DS37206 Rev. 4 – 2
DMN3016LK3
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
μ
A
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
1.3
—
8
2.3
12
V
m
Ω
V
V
GS(th)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 11A
V
GS
= 4.5V, I
D
= 9A
V
GS
= 0V, I
S
= 1A
—
—
Static Drain-Source On-Resistance
12
16
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
—
0.70
1.0
Ciss
Coss
Crss
R
G
—
—
—
—
—
1415
119
82
—
—
—
—
—
pF
pF
pF
Ω
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2.2
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
25.1
nC
Total Gate Charge
(V
GS
= -10V)
Total Gate Charge
(V
GS
= -4.5V)
Gate-Source Charge
Q
g
Q
g
—
—
—
—
—
—
—
—
—
11.3
3.5
—
—
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
DS
= 15V, I
D
= 12A
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
3.6
Turn-On Delay Time
4.8
Turn-On Rise Time
16.5
26.1
5.6
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.25
Ω
, R
G
= 3
Ω
,
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12.3
10.4
t
rr
I
F
= 12A, di/dt = 500A/
μ
s
Q
rr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting T
A
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
= 10V
GS
V
= 5.0V
DS
V
= 3.0V
GS
V
= 4.5V
GS
V
= 4.0V
GS
= 3.5V
V
GS
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
V
= 2.5V
GS
T
= -55°C
A
V
= 2.2V
GS
0.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2 Typical Transfer Characteristics
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November 2014
© Diodes Incorporated
DMN3016LK3
Document Number DS37206 Rev. 4 – 2
DMN3016LK3
0.03
0.02
0.03
0.025
0.02
V
= 4.5V
GS
T
= 150°C
= 125°C
A
T
A
T
= 85°C
= 25°C
= -55°C
A
A
0.015
T
V
GS
= 4.5V
V
GS
= 10V
0.01
0.005
0
0.01
T
A
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and
T
e
mperature
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1
0.024
0.02
V
= 10V
GS
= 10A
I
D
V
= 4.5V
= 5A
GS
0.016
0.012
0.008
0.004
0
V
= 4.5V
= 5A
GS
I
D
I
D
V
= 10V
GS
= 10A
I
D
0.8
0.6
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 5 On-Resistance Variation with
T
e
mperature
Figure 6 On-Resistance Variation with
T
e
mperature
3
2.5
2
30
25
20
15
10
5
I
= 1mA
D
I
= 250µA
D
T
= 25°C
1.5
1
A
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 7 Gate Threshold Variation vs. Ambient
T
e
mperature
0
25
50
75 100
125 150
V
SD
, SOURCE-DRAIN VOL
T
A
GE (V)
Figure 8 Diode Forward Voltage vs. Current
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November 2014
© Diodes Incorporated
DMN3016LK3
Document Number DS37206 Rev. 4 – 2
DMN3016LK3
10000
1000
100
10
10000
1000
T
= 150°C
A
C
iss
T
= 125°C
A
T
= 85°C
A
C
oss
100
10
C
rss
T
= 25°C
A
1
0.1
0
2
4
6
8
10 12 14 16 18 20
0
10
20
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
Figure 10 Typical Junction Capacitance
10
9
8
7
6
V
I
= 15V
DS
= 12A
5
4
3
2
1
0
D
0
5
10
15
20
25
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 3.08°C/W
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
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November 2014
© Diodes Incorporated
DMN3016LK3
Document Number DS37206 Rev. 4 – 2
DMN3016LK3
Package Outline Dimensions
E
A
b3
7°±1°
c2
TO252
Dim Min
Max Typ
L3
A
2.19 2.39 2.29
A1
0.00 0.13 0.08
A2
0.97 1.17 1.07
D
A2
H
b
0.64 0.88
0.783
L4
b2
0.76 1.14 0.95
b3
5.21 5.46 5.33
c2
0.45 0.58
0.531
D
6.00 6.20 6.10
D1
5.21
—
—
—
2.286
e
b(3x)
D1
e
—
b2(2x)
E
6.45 6.70 6.58
E1
4.32
—
—
H
L
9.40 10.41 9.91
1.40 1.78 1.59
Gauge Plane
Seating Plane
E1
L3
0.88 1.27 1.08
L4
0.64 1.02 0.83
L
a
0°
10°
—
2.74REF
All Dimensions in mm
Suggested Pad Layout
X1
Dimensions Value
(in mm)
C
X
X1
Y
Y1
Y2
4.572
1.060
5.632
2.600
5.700
10.700
Y1
Y2
C
Y
X
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November 2014
© Diodes Incorporated
DMN3016LK3
Document Number DS37206 Rev. 4 – 2
DMN3016LK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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November 2014
© Diodes Incorporated
DMN3016LK3
Document Number DS37206 Rev. 4 – 2
