Diodes-Incorporated-DMN3016LPS-13
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DMN3016LPS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
I
D
V
(BR)DSS
R
DS(ON) max
T
A
=
+
25°C
Fast Switching Speed
10.8A
9.5A
12m
@ V
GS
= 10V
16m
@ V
GS
= 4.5V
<1.1mm Package Profile
–
Ideal for Thin Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
30V
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
and yet maintain superior switching
)
Case: POWERDI5060-8
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
DC-DC Converters
Power Management Functions
Analog Switch
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI5060-8
D
S
S
D
D
D
D
Pin1
S
G
G
S
Top View
Pin Configuration
Internal Schematic
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMN3016LPS-13
Case
POWERDI5060-8
Packaging
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D
D
D
D
= Manufacturer
’
s Marking
N3016LP = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
N3016LP
YY WW
S
S
S
G
POWERDI is a registered trademark of Diodes Incorporated.
1 of 7
February 2015
© Diodes Incorporated
DMN3016LPS
Document number: DS35646
Rev. 2
–
2
DMN3016LPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
±20
V
GSS
Steady
State
T
A
= +25°C
10.8
8.5
A
A
A
A
I
D
I
D
I
D
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 4.5V
15.5
12.3
t<10s
Steady
State
9.5
7.5
13.5
10.8
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
70
22
24
A
A
I
DM
I
AS
Avalanche Energy (Note 7) L = 0.1mH
mJ
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.18
109
49
2.75
Units
W
°C/W
°C/W
W
Total Power Dissipation (Note 5)
P
D
R
θ
JA
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
t<10s
Steady State
t<10s
46
24
4.5
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
=
+
25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
–
–
–
–
–
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
–
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.4
–
2.0
12
V
m
Ω
V
V
GS(th)
R
DS (ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 1A
–
–
–
8.5
10.5
0.7
Static Drain-Source On-Resistance
16
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
1.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1415
119
82
–
–
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3.0
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
11.3
25.1
3.5
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge
(V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
V
DS
= 15V, I
D
= 12A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
3.6
Turn-On Delay Time
4.8
Turn-On Rise Time
16.5
26.1
5.6
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.25
Ω
, R
G
= 3
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
12.3
10.4
t
RR
I
F
= 12A, di/dt = 500A/
μ
s
Q
rr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
=
+
25°C .
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
2 of 7
February 2015
© Diodes Incorporated
DMN3016LPS
Document number: DS35646
Rev. 2
–
2
DMN3016LPS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= 3.5V
V
GS
= 4.0V
V
DS
= 5.0V
V
GS
= 3.0V
V
GS
= 4.5V
T
A
= 150
o
C
T
A
= 125
o
C
V
GS
= 10.0V
T
A
= 25
o
C
T
A
= -55
o
C
T
A
= 85
o
C
V
GS
= 2.5V
V
GS
= 2.2V
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure1 Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
0.03
0.025
0.02
0.015
0.01
0.005
0
0.03
V
GS
= 4.5V
T
A
= 150
o
C
T
A
= 125
o
C
0.02
0.01
0
V
GS
= 4.5V
V
GS
= 10V
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs Drain Current
and Gate Voltage
Figure 4 Typical On-Resistance vs Drain Current
and Temperature
0.024
0.02
1.8
1.6
1.4
1.2
1
0.016
0.012
0.008
0.004
0
V
GS
= 4.5V, I
D
=5A
V
GS
= 4.5V,
I
D
=5A
V
GS
= 10V,
I
D
=10A
V
GS
= 10V, I
D
=10A
0.8
0.6
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5 On-Resistance Variation with
Temperature
POWERDI is a registered trademark of Diodes Incorporated.
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February 2015
© Diodes Incorporated
DMN3016LPS
Document number: DS35646
Rev. 2
–
2
DMN3016LPS
3
2.5
2
30
25
20
15
10
5
I
D
= 1mA
1.5
1
V
GS
= 0V, T
A
= 25
o
C
I
D
= 250µA
0.5
0
0
-50 -25
0
25
50
75 100
125 150
0
0.2
0.4
0.6
0.8
1
1.2
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7 Gate Theshold Variation vs Junction
Temperature
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs Current
10000
10
9
8
7
6
5
4
3
2
1
0
f=1MHz
1000
100
V
DS
= 15V, I
D
=12A
C
iss
C
oss
C
rss
10
0
2
4
6
8
10 12 14 16 18 20
0
5
10
Qg (nC)
Figure 10 Gate Charge
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
100
R
DS(ON)
Limited
10
1
DC
P
W
=10s
P
W
=1s
P
W
=100ms
T
J(Max)
=150
℃
T
A
=25
℃
V
GS
=10V
Single Pulse
0.1
0.01
P
W
=10ms
P
W
=1ms
P
W
=100µs
DUT on 1*MRP Board
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
POWERDI is a registered trademark of Diodes Incorporated.
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February 2015
© Diodes Incorporated
DMN3016LPS
Document number: DS35646
Rev. 2
–
2
DMN3016LPS
1
D=0.9
D=0.7
D=0.5
0.1
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
0.01
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=117
℃
/W
D=0.005
Duty Cycle, D=t1/t2
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
POWERDI is a registered trademark of Diodes Incorporated.
5 of 7
February 2015
© Diodes Incorporated
DMN3016LPS
Document number: DS35646
Rev. 2
–
2
DMN3016LPS
Package Outline Dimensions
(1) Package Type: POWERDI
®
5060-8
POWERDI
®
5060-8
D
D1
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
Typ
1.00
Detail A
c
0( 4X)
A1
0.41
0.330 0.277
5.15 BSC
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
5.10
4.10
4.30
4.90
3.90
4.10
01 (
4X)
1
6.15 BSC
6.00
3.68
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e/2
4.39
1
1.27 BSC
0.71
b2 (
4X)
0.51
0.51
0.51
0.100
3.235
1.00
10º
0.61
0.61
D3
K
0.71
0.200 0.175
4.035 3.635
1.40
12º
8º
A
D2
b3 (
4X)
E3
E2
M
M1
Θ
Θ1
1.21
11º
7º
M1
Detail A
6º
G
L1
All Dimensions in mm
Suggested Pad Layout
(1) Package Type: POWERDI
®
5060-8
X4
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y2
C
G
G1
X
X3
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
POWERDI is a registered trademark of Diodes Incorporated.
6 of 7
February 2015
© Diodes Incorporated
DMN3016LPS
Document number: DS35646
Rev. 2
–
2
DMN3016LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
POWERDI is a registered trademark of Diodes Incorporated.
7 of 7
February 2015
© Diodes Incorporated
DMN3016LPS
Document number: DS35646
Rev. 2
–
2
