Diodes-Incorporated-DMN3022LDG-13
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Green
DMN3022LDG
30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (Type D)
Product Summary
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
BV
DSS
30V
R
DS(ON)
Max
Device
Q1
22m
Ω
@ V
GS
= 5V, I
D
= 10A
8m
Ω
@ V
GS
= 5V, I
D
= 10A
Low Input Capacitance
Q2
30V
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Mechanical Data
Description and Applications
®
Case: PowerDI
3333-8 (Type D)
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
DC-DC Converters
Power Management Functions
Analog Switch
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.044 grams (Approximate)
PowerDI3333-8 (Type D)
Pin 1
Top View
Bottom View
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMN3022LDG-7
DMN3022LDG-13
Case
Packaging
1,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8 (Type D)
PowerDI3333-8 (Type D)
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
R06 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
R06
PowerDI is a registered trademark of Diodes Incorporated.
1 of 10
May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
DMN3022LDG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Q1
Q2
Unit
V
30
Gate-Source Voltage
±10
V
V
GSS
T
C
= +25°C
15
12
A
A
I
D
T
C
= +70°C
Continuous Drain Current @ V
GS
= 5V
T
A
= +25°C
T
A
= +70°C
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
7.6
6.1
I
D
I
DM
I
AS
50
24
28
100
43
A
A
Avalanche Energy (Note 6) L = 0.1mH
92
mJ
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.96
Unit
T
A
= +25°C
T
A
= +70°C
Steady State
t < 10s
Total Power Dissipation
W
P
D
1.25
64
36
8.7
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
μ
A
nA
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1
1.4
16
2.1
22
—
1
V
m
Ω
S
V
GS(TH)
R
DS(ON)
|Y
FS
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 5V, I
D
= 10A
V
DS
= 5V, I
D
= 8A
V
GS
= 0V, I
S
= 8A
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
—
—
—
17
|
0.84
V
V
SD
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
370
176
8.2
—
—
—
481
228
10.6
C
iss
C
oss
C
rss
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
V
DS
= 0V, V
GS
= 0V, f =
1.0MHz
Gate Resistance
—
2.5
6.5
Ω
R
G
2.8
0.35
0.6
0.5
4.5
1.8
7.2
1.9
11.5
6.9
—
—
—
—
—
—
—
—
—
—
3.7
—
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge at V
TH
Gate-Source Charge
Gate-Drain Charge
Q
G
Q
G(TH)
Q
GS
Q
GD
t
D(ON)
t
R
nC
ns
V
DS
= 15V, I
D
= 8A
—
—
Turn-On Delay Time
6.7
—
Turn-On Rise Time
V
DD
= 15V, V
GS
= 4.5V,
I
D
= 8A, R
G
= 2
Ω
Turn-Off Delay Time
10.8
—
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
—
ns
t
RR
I
F
= 8A, di/dt = 300A/
μ
s
—
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
= +25°C
.
J
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 10
May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
DMN3022LDG
Electrical Characteristics Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1.0
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
μA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
0.8
—
—
—
0.96
6.4
1.2
8
V
m
Ω
S
V
GS(TH)
R
DS(ON)
|Y
FS
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 5V, I
D
= 10A
V
DS
= 5V, I
D
= 8A
V
GS
= 0V, I
S
= 8A
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
33
—
1
|
0.78
V
V
SD
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
766
441
19
996
573
25
1.5
8
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
G
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.69
6.1
V
DS
= 0V, V
GS
= 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge at V
TH
Gate-Source Charge
Q
G
0.47
0.8
—
Q
G(TH)
Q
GS
Q
GD
t
D(ON)
t
R
V
DS
= 15V, I
D
= 8A
—
1.1
Gate-Drain Charge
—
5.6
Turn-On Delay Time
8.4
—
2.5
Turn-On Rise Time
V
DD
= 15V, V
GS
= 4.5V,
I
D
= 8A, R
G
= 2
Ω
11.7
2.4
Turn-Off Delay Time
Turn-Off Fall Time
17.5
—
t
D(OFF)
t
F
Reverse Recovery Time
Reverse Recovery Charge
27.9
9.9
—
t
RR
I
F
= 8A, di/dt = 300A/
μ
s
—
Q
RR
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Typical Circuit
3 of 10
May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
DMN3022LDG
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 3.5V
V
GS
= 4.0V
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
= 3.5V
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 3.0V
V
GS
= 2.0V
V
GS
= 1.9V
V
GS
= 2.3V
V
GS
= 2.5V
V
GS
= 2.2V
V
GS
= 1.7V
V
GS
= 1.5V
V
GS
= 2.0V
0.0
0.0
0.0
0.5
1.0
1.5
2.0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 2. Q2 Typical Output Characteristic
Figure 1. Q1 Typical Output Characteristic
30
25
20
15
10
5
30
25
20
15
10
5
V
DS
= 5.0V
V
DS
= 5.0V
T
J
= 125
℃
T
J
= 85
℃
T
J
= 125
℃
T
J
= 150
℃
T
J
= 150
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
T
J
= 25
℃
T
J
= -55
℃
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Q1 Typical Transfer Characteristic
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Q2 Typical Transfer Characteristic
0.020
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
0.019
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.011
0.010
V
GS
= 5V
V
GS
= 5V
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 6. Q2 Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 5. Q1 Typical On-Resistance vs. Drain Current
and Gate Voltage
4 of 10
May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
DMN3022LDG
0.2
0.18
0.16
0.14
0.12
0.1
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.08
0.06
0.04
0.02
0
I
D
= 10A
I
D
= 10A
0
2
4
6
8
10
0
2
4
6
8
10
V
, GATE-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
GS
Figure 7. Q1 Typical Transfer Characteristic
Figure 8. Q2 Typical Transfer Characteristic
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.015
0.012
0.009
0.006
0.003
0
V
GS
= 5V
V
GS
= 5V
T
J
= 85
℃
T
J
= 125
℃
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 150
℃
T
J
= 25
℃
5
T
J
= -55
℃
T
J
= 25
℃
T
J
= -55
℃
0
5
10
15
20
25
30
0
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
Figure 9. Q1 Typical On-Resistance vs. Drain Current and
Temperature
Figure 10. Q2 Typical On-Resistance vs. Drain Current and
Temperature
2
2
1.8
1.6
1.4
1.2
1
1.8
1.6
1.4
1.2
1
V
GS
= 5V, I
D
= 10A
0.8
0.6
0.4
0.2
0
V
GS
= 5V, I
D
= 10A
0.8
0.6
0.4
0.2
0
-50
-25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 11. Q1 On-Resistance Variation with Temperature
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 12. Q2 On-Resistance Variation with Temperature
5 of 10
May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
DMN3022LDG
0.03
0.025
0.02
0.015
0.01
0.005
0
0.012
0.01
0.008
0.006
0.004
0.002
0
V
GS
= 5V, I
D
= 10A
V
GS
= 5V, I
D
= 10A
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 14. Q2 On-Resistance Variation with Temperature
Figure 13. Q1 On-Resistance Variation with
Temperature
2
1.8
1.6
1.4
1.2
1
2
1.8
1.6
1.4
1.2
1
I
D
= 1mA
I
D
= 1mA
I
D
= 250
μ
A
I
D
= 250
μ
A
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 15. Q1 Gate Threshold Variation vs. Junction
Temperature
Figure 16. Q2 Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
30
25
20
15
10
5
V
GS
= 0V
V
GS
= 0V
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 85
o
C
T
J
= 85
o
C
T
J
= 125
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
0
0
0
0.3
0.6
0.9
1.2
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 18. Q2 Diode Forward Voltage vs. Current
Figure 17. Q1 Diode Forward Voltage vs. Current
6 of 10
May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
DMN3022LDG
10000
1000
100
10
100000
10000
1000
100
T
J
= 150
℃
T
J
= 150
℃
T
J
= 125
℃
T
J
= 125
℃
T
J
= 85
℃
10
T
J
= 85
℃
T
J
= 25
℃
15
1
1
T
J
= 25
℃
0.1
0.1
0
5
10
20
25
30
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Q1 Typical Drain-Source Leakage Current vs.
Voltage
Figure 20. Q2 Typical Drain-Source Leakage Current vs.
Voltage
10
8
10
8
6
6
4
4
V
DS
= 15V, I
D
= 8A
V
DS
= 15V, I
D
= 8A
2
2
0
0
0
1
2
3
4
5
6
7
0
3
6
9
12
15
Q
g
(nC)
Figure 21. Q1 Gate Charge
Q
g
(nC)
Figure 22. Q2 Gate Charge
100
10
1000
100
10
R
DS(ON)
Limited
R
DS(ON)
Limited
P
W
=100µs
P
W
=100µs
P
W
=1ms
1
P
W
=1ms
P
W
=10ms
P
W
=10ms
1
P
W
=100ms
P
W
=1s
P
W
=100ms
P
W
=1s
0.1
0.01
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
0.1
0.01
P
W
=10s
10
P
W
=10s
DC
DC
10
0.1
1
100
0.01
0.1
1
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 24. Q2 SOA, Safe Operation Area
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 23. Q1 SOA, Safe Operation Area
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May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
DMN3022LDG
700
600
500
400
300
200
100
0
Single Pulse
R
θ
JA
= 109
℃
/W
R
θ
JA
(t) = R
θ
JA
* r(t)
T
J
-T
A
= P * R
θ
JA
(t)
1E-06
1E-05
0.0001
0.001
0.01
t
1
, PULSE DURATION TIME (sec)
Figure 25. Single Pulse Maximum Power Dissipation
0.1
1
10
100
1000
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 109
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
1E-06 1E-05
0.0001 0.001
0.01
0.1
1
10
100 1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 26. Transient Thermal Resistance
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May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
DMN3022LDG
Package Outline Dimensions
PowerDI3333-8 (Type D)
PowerDI3333-8
(Type D)
Min Max
A3
A1
A
Dim
Typ
A
A1
A3
A3a
b
b2
D
D2
E
1.17
0.00
0.15
0.05
0.30
0.95
3.20
2.65
3.20
1.75
0.15
—
1.23 1.20
0.05 0.02
0.25 0.20
0.15 0.10
0.40 0.35
1.05 1.00
3.40 3.30
2.75 2.70
3.40 3.30
1.85 1.80
0.25 0.20
A3a
D
D2
La
b2
1
d
k
E2
d
e
E E2
—
—
0.65
0.30
PIN# 1 I.D.
k
—
k1
L
La
z
0.21
0.40
0.15
0.25
0.31 0.26
0.50 0.45
0.25 0.20
0.35 0.30
k1
z
All Dimensions in mm
b
L
e
These exposed die clip may vary
Suggested Pad Layout
PowerDI3333-8 (Type D)
X4
X3
X2
Value
Dimensions
(in mm)
C
C
0.650
0.450
1.100
2.400
2.800
3.500
0.650
0.300
1.390
1.900
3.600
X
X1
X2
X3
X4
Y
Y4
Y2 Y3
Y1
Y2
Y3
Y4
Y1
Y( 7x)
X( 6x)
X1
9 of 10
May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
DMN3022LDG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
10 of 10
May 2018
© Diodes Incorporated
DMN3022LDG
Document number: DS40581 Rev. 2 – 2
