Diodes-Incorporated-DMN3026LVT-7
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DMN3026LVT
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Input
Capacitance
I
D
V
(BR)DSS
R
DS(on) max
T
A
= +25°C
Low On-Resistance
Fast Switching Speed
6.6A
5.8A
23m
Ω
@ V
GS
= 10V
30m
Ω
@ V
GS
= 4.5V
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
and yet maintain superior switching
Mechanical Data
)
Case: TSOT26
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
DC-DC Converters
Power management functions
Backlighting
Terminals: Finish – Tin Finish annealed over Copper leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
TSOT26
D
D
G
D
6
1
2
3
D
S
5
4
Top View
Top View
Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN3026LVT-7
DMN3026LVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
N5L = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
N5L
N5L
Y
̅
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
̅
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
Code
X
Y
Z
A
B
C
D
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
April 2014
© Diodes Incorporated
DMN3026LVT
Document number: DS36813
Rev. 3 – 2
DMN3026LVT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
±20
V
GSS
Steady
State
T
A
= +25°C
6.6
5.3
A
A
I
D
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 10V
8.5
6.8
t<10s
Maximum Body Diode Forward Current (Note 6)
3.0
35
A
A
I
S
Pulsed Drain Current (10
s pulse, duty cycle = 1%)
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.2
Units
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
R
θ
JA
P
D
0.8
100
60
T
A
= +70°C
Steady state
t<10s
°C/W
°C/W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
1.5
T
A
= +25°C
W
1.0
83
T
A
= +70°C
Steady state
t<10s
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
50
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
14.5
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
BV
DSS
I
DSS
1.0
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
nA
I
GSS
100
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.0
1.5
19
2.0
23
V
m
Ω
V
V
GS(th)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 6.5A
Static Drain-Source On-Resistance
22
30
V
GS
= 4.5V, I
D
= 6.0A
Diode Forward Voltage
0.7
1.2
V
GS
= 0V, I
S
= 1.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
C
oss
C
rss
R
G
Q
g
643
65
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
49
2.5
5.7
12.5
1.7
1.8
2.2
2.5
12.1
3.0
6.5
1.7
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
(V
GS
= 4.5V)
Total Gate Charge
(V
GS
= 10V)
Gate-Source Charge
Q
g
nC
V
DS
= 15V, I
D
= 4.0A
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= 10V, V
DD
= 15V, R
G
= 6.0
Ω
,
nS
Turn-Off Delay Time
I
D
= 6.5A
t
D(off)
t
f
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
nS
nC
t
rr
I
F
= 6.5A, dI/dt = 100A/
μ
s
I
F
= 6.5A, dI/dt = 100A/
μ
s
Q
rr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 6
April 2014
© Diodes Incorporated
DMN3026LVT
Document number: DS36813
Rev. 3 – 2
DMN3026LVT
30
25
20
15
10
5
20
18
16
14
12
10
8
V
= 10V
= 5V
GS
V
= 5.0V
DS
V
GS
V
= 4.5V
GS
V
= 3V
GS
V
= 4.V
GS
V
= 3.5V
GS
V
= 2.5V
T
= 150°C
GS
A
6
T
= 85°C
A
T
= 125°C
4
A
T
= 25°C
A
2
T
= -55°C
A
V
= 2V
GS
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.03
0.1
0.08
0.06
0.04
0.025
V
= 4.5V
GS
V
= 10V
0.02
0.015
0.01
GS
I
= 6.5A
D
0.02
0
I
= 6A
D
1
6
11
16
21
26
31
0
4
8
12
16
20
V
GS
, GATE-SOURCE CURRENT (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical Transfer Characteristics
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.05
0.045
0.04
1.8
V
= 4.5V
GS
V
I
= 10V
GS
= 6.5A
D
1.6
1.4
1.2
1
T
= 150°C
A
T
= 125°C
A
0.035
0.03
V
= 4.5V
= 6A
GS
I
T
= 85°C
D
A
0.025
0.02
T
A
= 25°C
T
= -55°C
A
0.015
0.01
0.8
0.6
0.005
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 6 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
0
2
4
6
8
10 12 14 16 18 20
C)
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and
T
e
mperature
3 of 6
April 2014
© Diodes Incorporated
DMN3026LVT
Document number: DS36813
Rev. 3 – 2
DMN3026LVT
0.05
0.04
2
1.8
1.6
1.4
1.2
1
V
= 4.5V
= 6A
GS
I
= 1mA
I
D
D
I
= 250µA
D
0.03
0.02
0.01
0
V
I
= 10V
GS
= 6.5A
D
0.8
0.6
-50 -25
T
J
, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with
T
emperature
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
C)
C)
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 8 Gate Threshold Variation vs. Ambient
T
e
mperature
20
18
16
14
12
10
8
10000
f = 1MHz
1000
T
= 150°C
A
C
iss
T
= 125°C
A
T
= 25°C
A
100
T
= 85°C
C
6
A
oss
4
C
rss
T
= -55°C
A
2
0
0
10
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Junction Capacitance
100
10
R
DS(on)
Limited
P
= 10µs
W
DC
P
= 10s
W
V
I
= 15V
1
DS
P
= 1s
= 4A
W
D
P
= 100ms
W
P
= 10ms
W
P
= 1ms
0.1
W
T
T
= 150°C
J(max)
= 25°C
A
P
= 100µs
W
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10 11 12 13
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Q
g
, TO
T
A
L GATE CHARGE (nC)
Figure 11 Gate Charge
4 of 6
April 2014
© Diodes Incorporated
DMN3026LVT
Document number: DS36813
Rev. 3 – 2
DMN3026LVT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
R
JA
= 97°C/W
JA
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
TSOT26
Dim Min Max Typ
D
e1
A
—
1.00
—
—
A1
0.01 0.10
A2
0.84 0.90
—
D
E
E1
b
c
e
—
—
—
—
—
—
2.90
2.80
1.60
—
E
E1
L2
c
0.30 0.45
0.12 0.20
—
—
—
L
—
—
0.95
1.90
—
4x
1
e
e1
L
6x b
0.30 0.50
L2
θ
θ
1
—
0°
4°
—
8°
12°
0.25
4°
—
A2
A1
A
All Dimensions in mm
Suggested Pad Layout
C
C
Dimensions Value
(in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y (6x)
X (6x)
5 of 6
April 2014
© Diodes Incorporated
DMN3026LVT
Document number: DS36813
Rev. 3 – 2
