Diodes-Incorporated-DMN3027LFG-13

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Diodes-Incorporated-DMN3027LFG-13
DMN3027LFG  
Green  
N-CHANNEL ENHANCEMENT MODE MOSFET  
POWERDI

®  

Product Summary  
Features  
Low R

DS(ON)

–
ensures on state losses are minimized  
I

D  

BV

DSS  

R

DS(ON)

max  
T

A

= +25°C  
Small form factor thermally efficient package enables higher  
density end products  
8.0A  
6.5A  
18.6
mΩ @ V

GS

= 10V  
26.5
mΩ @ V

GS

= 4.5V  
30V  
Occupies just 33% of the board area occupied by SO-8 enabling  
smaller end product  
100% UIS (Avalanche) Rated  
100% R

g

Tested  
Description  
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
This new generation MOSFET is designed to minimize the on-state  
resistance (R

DS(ON)

) and yet maintain superior switching performance,  
making it ideal for high-efficiency power management applications.  
Applications  
Mechanical Data  
Backlighting  
Case: POWERDI

®

3333-8  
DC-DC Converters  
Power Management Functions  
Case Material:
Molded Plastic, “Green” Molding Compound.
UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram Below  
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.  
Solderable per MIL-STD-202, Method 208  
Weight: 0.072 grams (Approximate)  
POWERDI

®

3333-8  
D
Pin 1  
S
S
S
G
G
D
D
S
D
D
Equivalent Circuit  
Top View  
Bottom View  
Ordering Information
(Note 4)  
Part Number  
DMN3027LFG-7  
DMN3027LFG-13  
Case  
Packaging  
2,000 / Tape & Reel  
3,000 / Tape & Reel  
POWERDI

®

3333-8  
POWERDI

®

3333-8  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.  
2. See

r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at

Marking Information  
N37 = Product Marking Code  
YYWW = Date Code Marking  
YY = Last Digit of Year (ex: 15 for 2015)  
WW = Week Code (01
–
53)  
N37  
POWERDI is a registered trademark of Diodes Incorporated.  
1 of 7  
October 2015  
© Diodes Incorporated  
DMN3027LFG  
Document number: DS38020 Rev. 3 – 2  

DMN3027LFG  
Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
V

DSS  

Value  
30  
Unit  
V
Gate-Source Voltage  
±25  
V
V

GSS  

Steady  
Continuous Drain Current (Note 5) V

GS

= 10V  
State  
T

A

= +25°C  
T

A

= +70°C  
T

A

= +25°C  
T

A

= +70°C  
T

A

= +25°C  
T

A

= +70°C  
T

A

= +25°C  
T

A

= +70°C  
T

A

= +25°C  
T

A

= +70°C  
5.3  
4.2  
A
A
A
A
A
I

D  

I

D  

I

D  

I

D  

I

D  

Steady  
Continuous Drain Current (Note 6) V

GS

= 10V  
State  
8.0  
6.3  
9.5  
7.7  
t

10s  
Continuous Drain Current (Note 6) V

GS

= 10V  
Continuous Drain Current (Note 6) V

GS

= 4.5V  
Continuous Drain Current (Note 6) V

GS

= 4.5V  
Steady  
State  
6.5  
4.9  
7.8  
6.2  
t

10s  
Pulsed Drain Current (Note 7)  
Avalanche Current (Notes 7 & 8)  
70  
18  
16  
A
A
I

DM  

I

AR  

Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH  
mJ  
E

AR  

Thermal Characteristics  
Characteristic  
Power Dissipation (Note 5)  
Symbol  
P

D  

Max  
1.0  
Unit  
W
130.6  
2.07  
°C/W  
W
Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)  
Power Dissipation (Note 6)  
R

θJA  

P

D  

62.5  
°C/W  
W
Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 6)  
Power Dissipation (Note 6) t

10s  
R

θJA  

P

D  

3.0  
43.8  
°C/W  
°C  
Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 6) t

10s  
Operating and Storage Temperature Range  
R

θJA  

T

J

,
T

STG  

-55 to +150  
Notes:  
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.  
6.
Device mounted on 2” x 2” FR
-4 PCB with high coverage 2 oz. Copper, single sided.  
7. Repetitive rating, pulse width limited by junction temperature.  
8. I
 
and E
 
rating are based on low frequency and duty cycles to keep T
 
= +25°C.  
AR AR  
J
Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 9)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
30  
–
–
–
–
–
V
BV

DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  
V

DS

= 30V, V

GS

= 0V  
100  
±100  
nA  
nA  
Zero Gate Voltage Drain Current T

J

= +25°C  
Gate-Source Leakage  
–
I

GSS  

V

GS

= ±25V, V

DS

= 0V  
ON CHARACTERISTICS (Note 9)  
Gate Threshold Voltage  
0.9  
1.2  
13.5  
22  
1.8  
18.6  
26.5  
1.0  
V
m
Ω  
V
V

GS(TH)  

R

DS(ON)  

V

SD  

V

DS

= V

GS

, I

D

= 250
μA  
V

GS

= 10V, I

D

= 10A  
V

GS

= 4.5V, I

D

= 7.5A  
V

GS

= 0V, I

S

= 1A  
–
–
–
Static Drain-Source On-Resistance  
Diode Forward Voltage  
DYNAMIC CHARACTERISTICS (Note 10)  
Input Capacitance  
0.7  
–
–
–
–
–
–
–
–
–
–
–
–
580  
110  
70  
–
C

iss  

C

oss  

C

rss  

R

g  

V

DS

= 15V, V

GS

= 0V,  
f = 1.0MHz  
Output Capacitance  
–
pF  
Reverse Transfer Capacitance  
Gate Resistance  
–
2.0  
5.3  
11.3  
1.9  
1.9  
4.4  
4.6  
19.5  
5.8  
3.0  
Ω
V

DS

= 0V, V

GS

= 0V, f = 1MHz  
V

GS

= 4.5V, V

DS

= 15V, I

D

= 10A  
–
–
–
–
–
–
–
–
Total Gate Charge V

GS

= 4.5V  
Total Gate Charge V

GS

= 10V  
Gate-Source Charge  
Q

g  

Q

g  

nC  
V

GS

= 10V, V

DS

= 15V,  
I

D

= 10A  
Q

gs  

Q

gd  

t

D(ON)  

t

R  

Gate-Drain Charge  
Turn-On Delay Time  
ns  
ns  
ns  
ns  
Turn-On Rise Time  
V

GS

= 10V, V

DS

= 15V,  
R

L

= 15
Ω, R

G

= 6
Ω  
Turn-Off Delay Time  
t

D(OFF)  

t

F  

Turn-Off Fall Time  
Notes:  
9. Short duration pulse test used to minimize self-heating effect.  
10. Guaranteed by design. Not subject to production testing.  
POWERDI is a registered trademark of Diodes Incorporated.  
2 of 7  
October 2015  
© Diodes Incorporated  
DMN3027LFG  
Document number: DS38020 Rev. 3 – 2  

DMN3027LFG  
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
30  
25  
20  
15  
10  
5
V

GS

= 10.0V  
V

DS

= 5.0V  
V

GS

= 4.0V  
V

GS

= 4.5V  
V

GS

= 3.5V  
T

A

= 125
℃  
T

A

= 150
℃  
T

A

= 85
℃  
V

GS

= 3.0V  
V

GS

= 2.5V  
T

A

= 25
℃  
T

A

= -55
℃  
0
0.0  
0
0.5  
1
1.5  
V

GS

, GATE-SOURCE VOLTAGE (V)  
Figure 2. Typical Transfer Characteristic  
2
2.5  
3
3.5  
4
4.5  
5
0
0.5  
1
1.5  
2
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Figure 1. Typical Output Characteristic  
0.032  
0.028  
0.024  
0.02  
0.05  
0.045  
0.04  
0.035  
0.03  
0.025  
0.02  
0.015  
0.01  
0.005  
0
V

GS

= 4.5V  
T

A

= 150
℃  
T

A

= 125
℃  
V

GS

= 4.5V  
0.016  
0.012  
0.008  
0.004  
0
T

A

= 85
℃  
T

A

= 25
℃  
T

A

= -55
℃  
V

GS

= 10V  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
I

D

, DRAIN CURRENT (A)  
I

D

, DRAIN-SOURCE CURRENT (A)  
Figure 4. Typical On-Resistance vs. Drain Current and  
Temperature  
Figure 3. Typical On-Resistance vs. Drain Current and  
Gate Voltage  
1.6  
1.4  
1.2  
1
0.04  
0.035  
0.03  
0.025  
0.02  
0.015  
0.01  
0.005  
0
V

GS

= 10V, I

D

= 10A  
V

GS

= 4.5V, I

D

= 5A  
V

GS

= 4.5V, I

D

= 5A  
V

GS

= 10V, I

D

= 10A  
0.8  
0.6  
-50  
-25  
0
25  
T

J

, JUNCTION TEMPERATURE (
℃
)  
Figure 6. On-Resistance Variation with Temperature  
50  
75  
100 125 150  
-50 -25  
0
25  
T

J

, JUNCTION TEMPERATURE (
℃
)  
Figure 5. On-Resistance Variation with Temperature  
50  
75  
100 125 150  
POWERDI is a registered trademark of Diodes Incorporated.  
3 of 7  
October 2015  
© Diodes Incorporated  
DMN3027LFG  
Document number: DS38020 Rev. 3 – 2  

DMN3027LFG  
2
1.5  
1
30  
25  
20  
15  
10  
5
I

D

= 1mA  
T

A

= 25

o

C  
I

D

= 250
μ
A  
0.5  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
-25  
T

J

, JUNCTION TEMPERATURE (
℃
)  
Figure 7. Gate Threshold Variation vs. Temperature  
0
25  
50  
75  
100 125 150  
V

SD

, SOURCE-DRAIN VOLTAGE (V)  
Figure 8. Diode Forward Voltage vs. Current  
10000  
1000  
100  
10  
1000  
f=1MHz  
C

iss  

T

A

= 150

o

C  
C

oss  

100  
T

A

= 125

o

C  
T

A

= 85

o

C  
C

rss  

T

A

= 25

o

C  
10  
1
0
4
8
12  
16  
20  
0
10  
20  
30  
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Figure 10. Typical Total Capacitance  
V

DS

, Drain-SOURCE VOLTAGE (V)  
Figure 9. Typical Leakage Current vs. Drain-Source  
Voltage  
10  
400  
350  
Single Pulse  
R
R
T
= 60
C/W  
JA  
8
6
4
2
0
= r
 
* R  
JA(t)  
(t)  
JA  
300  
250  
200  
150  
100  
50  
– T
 
= P * R  
J
A
JA(t)  
V

DS

= 15V, I

D

= 10A  
0
0.0001 0.001
 
0.01  
0.1  
1
10  
100 1,000  
0
2
4
6
8
10  
Q

g

, Gate Charge (nC)  
Figure 11. Gate Charge  
12  
14  
16  
t1, PULSE DURATION TIME (sec)  
Figure 12. Single Pulse Maximum Power Dissipation  
POWERDI is a registered trademark of Diodes Incorporated.  
4 of 7  
October 2015  
© Diodes Incorporated  
DMN3027LFG  
Document number: DS38020 Rev. 3 – 2  

DMN3027LFG  
100  
10  
100  
10  
P

W

=10µs  
R

DS(ON)

Limited  
R

DS(ON)

Limited  
P

W

=100µs  
P

W

=100µs  
P

W

=1ms  
P

W

=1ms  
1
1
P

W

=10ms  
P

W

=100ms  
P

W

=1s  
P

W

=10ms  
P

W

=100ms  
P

W

=1s  
0.1  
0.01  
0.1  
0.01  
T

J(Max)

= 150
℃
T

A

= 60
℃  
Single Pulse  
DUT on 1*MRP Board  
V

GS

= 4.5V  
T

J(Max)

= 150
℃
T

A

= 25
℃  
Single Pulse  
DUT on 1*MRP Board  
V

GS

= 10V  
P

W

=10s  
DC  
P

W

=10s  
DC  
0.1  
1
10  
100  
0.1  
1
10  
100  
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Figure 14. SOA, Safe Operation Area  
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Figure 13. SOA, Safe Operation Area  
1
D=0.5  
D=0.3  
D=0.9  
D=0.7  
0.1  
0.01  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D=0.005  
R

θ
JA

(t) = r(t) * R

θ
JA  

R

θ
JA

= 60
℃
/W  
Duty Cycle, D = t1 / t2  
D=Single Pulse  
0.001  
1E-05  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, PULSE DURATION TIME (sec)  
Figure 15. Transient Thermal Resistance  
POWERDI is a registered trademark of Diodes Incorporated.  
5 of 7  
October 2015  
© Diodes Incorporated  
DMN3027LFG  
Document number: DS38020 Rev. 3 – 2  

DMN3027LFG  
Package Outline Dimensions  
Please see AP02002 at

r the latest version.  
POWERDI

®

3333-8  
A3  
A1  
A
POWERDI

®

3333-8  
Dim Min
 
Max Typ  
0.75 0.85 0.80  
A1
0.00 0.05 0.02  
Seating Plane  
A
D
A3  
b
0.203  
0.27 0.37 0.32  
0.20  
3.25 3.35 3.30  
  
  
L( 4x)  
D2  
1
b2  
D
  
  
D2
2.22 2.32 2.27  
3.25 3.35 3.30  
E2
1.56 1.66 1.61  
0.65  
e1
0.79 0.89 0.84  
Pin #1 ID  
E
e
  
  
b2( 4x)  
L1( 3x)  
E
e1  
E2  
L
L1  
z
0.35 0.45 0.40  
0.39  
  
  
  
  
0.515  
All Dimensions in mm  
8
z( 4x)  
b
e
Suggested Pad Layout  
Please see AP02001 at

r the latest version.  
POWERDI

®

3333-8  
X3  
X2  
8
Dimensions Value
 
(in mm)  
C
X
X1  
X2  
X3  
Y
Y1  
Y2  
Y3  
0.650  
0.420  
0.420  
0.230  
2.370  
0.700  
1.850  
2.250  
3.700  
X1  
Y1  
Y2  
Y3  
Y
X
1
C
POWERDI is a registered trademark of Diodes Incorporated.  
6 of 7  
October 2015  
© Diodes Incorporated  
DMN3027LFG  
Document number: DS38020 Rev. 3 – 2  

DMN3027LFG  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others.
 
Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated.
 
Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
POWERDI is a registered trademark of Diodes Incorporated.  
7 of 7  
October 2015  
© Diodes Incorporated  
DMN3027LFG  
Document number: DS38020 Rev. 3 – 2