Diodes-Incorporated-DMN3030LSS-13
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DMN3030LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
max
V
(BR)DSS
R
DS(ON)
max
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
T
A
= +25°C
18m
Ω @ V
GS
= 10V
30m
Ω @ V
GS
= 4.5V
9.0A
7.0A
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: SO-8
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) yet maintain superior switching performance, making it ideal
for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.
Backlighting
Power Management Functions
DC-DC Converters
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D
SO-8
S
S
S
G
D
D
G
D
D
S
Top View
Top View
Equivalent circuit
Internal Schematic
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN3030LSS-13
SO-8
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3.Halogen- and Antimony-
free “Green” products are defined as those which contain <
900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
8
5
8
5
= Manufacturer’s Marking
N3030LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 – 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
N3030LS
YY
WW
N3030LS
YY
WW
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
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May 2018
© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 13 – 2
DMN3030LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
25
V
GSS
Drain Current
(Note 6)
Steady
State
T
A
= +25°C
T
A
= +70°C
9.0
6.75
A
A
I
D
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
40
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
1.7
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
73
2.5
°C/W
W
R
ϴ
JA
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
50
°C/W
°C
R
ϴ
JA
T
J,
T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
1
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
μ
A
V
DS
= 30V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
100
1
nA
μ
A
Gate-Source Leakage
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
2.1
V
15.7
26.4
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
V
DS
= 10V, I
D
= 9A
V
GS
= 0V, I
S
= 2.1A
18
30
Static Drain-Source On-Resistance
m
Ω
R
DS (ON)
Forward Transconductance
Diode Forward Voltage
5.8
0.7
S
V
0.5
1.2
g
fs
V
SD
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
741
124
95
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
G
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 8)
0.30
0.88
2.5
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 15V, V
GS
= 4.5V, I
D
= 9A
7.6
16.7
1.9
12
25
Total Gate Charge
Q
g
nC
ns
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
gs
Q
gd
t
d(on)
t
r
V
= 15V, V
= 10V,
I
D
= 9A
GS
DS
5.2
4.0
4.4
V
GS
= 10V, V
DS
= 15V,
R
L
= 15
Ω
, R
G
= 6
Ω
Turn-Off Delay Time
Fall Time
23.0
9.4
t
d(off)
t
f
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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May 2018
© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 13 – 2
DMN3030LSS
16
14
18
15
V
= 10V
GS
V
= 5V
V
= 4.5V
DS
12
10
8
GS
12
9
6
6
4
V
V
= 3.0V
GS
3
0
2
0
= 2.5V
GS
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
V
GS
, GATE SOURCE VOL
T
A
GE (V)
Fig. 1 Typical Output Characteristic
Fig. 2 Typical Transfer Characteristics
0.03
0.02
0.06
0.05
0.04
V
= 4.5V
GS
V
= 4.5V
GS
T
= 150°C
A
T
T
= 125°C
= 85°C
A
V
= 10V
GS
A
0.03
T
= 25°C
0.01
A
A
0.02
0.01
T
= -55°C
0
0
3
6
9
12
15
0.1
1
10
100
I
D
, DRAIN-SOURCE CURRENT (A)
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3
Typical On-Resistance
Fig. 4 Typical On-Resistance
vs. Drain Current and Gate Voltage
vs. Drain Current and
T
e
mperature
1.6
1.5
0.03
V
= 10V
GS
1.4
T
T
= 150°C
0.025
A
V
= 10V
GS
= 10A
I
D
1.3
1.2
= 125°C
A
V
= 4.5V
= 5A
GS
T
= 85°C
I
A
0.02
D
1.1
1.0
T
T
= 25°C
A
0.015
0.01
0.9
0.8
0.7
= -55°C
A
-50
0
50
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with
T
emperature
100
150
0
3
6
9
12
15
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance
vs. Drain Current and
T
e
mperature
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© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 13 – 2
DMN3030LSS
2.5
2.2
10,000
1,000
I
= 250µA
D
1.9
1.6
1.3
1
100
10
0
5
10
15
20
25
30
-50 -25
0
25
50
75 100
125 150
T
A
, AMBIENT TEMPERATURE (°C)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 8
T
o
tal Capacitance
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
100
10
1
V
= 150°C
GS
V
= 125°C
0.1
GS
V
= 85°C
GS
0.01
V
= 25°C
GS
= -55°C
V
0.001
GS
0.0001
0
0.1 0.2 0.3
0.4 0.5 0.6 0.7 0.8 0.9
V
SD
, SOURCE-DRAIN VOLTAGE (V)
1
Fig. 9 Diode Forward Voltage vs. Current
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
R
(t) = r(t) * R
JA
R
JA
= 90°C/W
JA
0.01
P(pk)
D = 0.01
t
1
t
2
D = 0.005
T
– T
= P * R
(t)
J
A
JA
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 10 Transient Thermal Response
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May 2018
© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 13 – 2
DMN3030LSS
Package Outline Dimensions
SO-8
SO-8
Dim
A
A1
b
c
D
Min
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
—
Max
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
—
Typ
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
E
1
E
b
E1
E0
e
h
L
E1
h
)
Q
sides
All
–
—
0.82
0.70
(
7°
9°
c
0.62
0.60
Q
4°±3°
A
All Dimensions in mm
Gauge Plane
Seating Plane
L
A1
e
E0
D
Suggested Pad Layout
SO-8
X1
Dimensions Value
(in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
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May 2018
© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 13 – 2
DMN3030LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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May 2018
© Diodes Incorporated
DMN3030LSS
Document number: DS31261 Rev. 13 – 2
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Authorized Distributor
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