Diodes-Incorporated-DMN3032LFDB-13
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DMN3032LFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
Max
T
A
= +25°C
BV
DSS
R
DS(ON)
Max
Low Input Capacitance
Fast Switching Speed
6.2A
5.2A
30
mΩ
@ V
GS
= 10V
42mΩ @ V
GS
= 4.5V
Low Input/Output Leakage
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
Body Control Electronics
Power Management Functions
DC-DC Converters
An Automotive-Compliant Part is Available Under Separate
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu Annealed over Copper Leadframe.
e4
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type B)
S2
D1
D2
G2
D2
D1
G1
G2
D1
D2
G1
S1
S2
S1
Bottom View
Pin1
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN3032LFDB
-7
DMN3032LFDB
-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are d
efined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
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January 2020
© Diodes Incorporated
DMN3032LFDB
Document number: DS35730 Rev. 5 – 2
DMN3032LFDB
Marking Information
Site 1
U-DFN2020-6 (Type B)
N5 = Product Type Marking Code
YM = Date Code Marking
M
N5
Y
Y = Year (ex: H = 2020)
M = Month (ex: 9 = September)
Date Code Key
Year
2012
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
Z
…
H
I
J
K
L
M
N
O
P
R
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2
N5 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
N
5
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2012
2
…
…
2020
0
2021
1
2022
2
2023
3
2024
4
2025
5
2026
6
2027
7
2028
8
2029
9
Code
Week
Code
1-26
27-52
53
A-Z
a-z
z
Internal Code
Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
T
U
V
W
X
Y
Z
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January 2020
© Diodes Incorporated
DMN3032LFDB
Document number: DS35730 Rev. 5 – 2
DMN3032LFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady T
A
= +25
C
6.2
5.0
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
State
T
A
= +75
C
Maximum Continuous Body Diode Forward Current (Note 6)
2
A
A
I
S
Pulsed Body Diode Forward Current (370
μs Pulse, Duty Cycle = 1%)
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
20
25
12
10
I
SM
I
DM
I
AS
E
AS
A
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
1.0
127
75
1.7
72
43
9
W
P
D
Steady state
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
P
D
t<10s
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Zero Gate Voltage Drain Current T
J
= +150°C (Note 9)
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
—
1.0
30
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V
μA
μA
nA
100
±100
I
DSS
I
GSS
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
—
—
1.5
2.0
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.8A
V
GS
= 0V, I
S
= 1A
25
30
30
42
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
0.75
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
500
52
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
44
2.3
5.0
10.6
1.3
1.8
2.2
2.6
9.7
2.0
V
DS
= 0V, V
GS
= 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
V
DS
= 15V, I
D
= 5.8A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6
Ω, R
G
= 3
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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January 2020
© Diodes Incorporated
DMN3032LFDB
Document number: DS35730 Rev. 5 – 2
DMN3032LFDB
20
18
16
14
12
10
8
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 4.0V
V
DS
= 5V
V
GS
= 3.5V
V
GS
= 10.0V
V
GS
= 4.5V
V
GS
= 3.0V
T
A
= 150
℃
T
A
= 125
℃
T
A
= 85
℃
6
V
GS
= 2.5V
4
T
A
= 25
℃
2
T
A
= -55
℃
V
GS
= 2.0V
4
0
0.0
0
0.5
1
1.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
2.5
3
3.5
4
4.5
5
0
1
2
3
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.05
0.04
0.03
0.02
0.01
0
0.1
0.08
0.06
0.04
0.02
0
I
D
= 3.6A
V
GS
= 4.5V
V
GS
= 10V
I
D
= 2.8A
1
3
5
7
9
11 13 15 17 19 21
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance
vs. Drain Current
and Gate Voltage
1.8
1.6
1.4
1.2
1
0.05
0.045
0.04
V
GS
= 10V
V
GS
= 10V, I
D
= 5.0A
150
℃
125
℃
85
℃
0.035
0.03
0.025
0.02
V
GS
= 4.5V, I
D
= 3.0A
25
℃
-55
℃
0.015
0.01
0.8
0.6
0.005
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
0
25
50
75 100
125 150
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
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DMN3032LFDB
Document number: DS35730 Rev. 5 – 2
DMN3032LFDB
2
1.8
1.6
1.4
1.2
1
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
= 1mA
V
GS
= 4.5V, I
D
= 3.0A
I
D
= 250mA
V
GS
= 10V, I
D
= 5.0A
0.8
0.6
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
20
18
16
14
12
10
8
1000
100
10
f=1MHz
C
iss
V
GS
= 0V, T
A
= 150
℃
V
GS
= 0V, T
A
= 125
℃
V
GS
= 0V, T
A
= 85
℃
C
oss
6
C
rss
V
GS
= 0V, T
A
= 25
℃
4
V
GS
= 0V,
2
T
A
= -55
℃
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
10
8
R
DS(ON)
Limited
P
W
=100µs
6
DC
1
P
W
=10s
V
DS
= 15V, I
D
= 3.6A
P
W
=1s
4
T
J(Max)
=150
℃
T
A
=25
℃
Single Pulse
DUT on
1*MRP board
V
GS
=4.5V
0.1
0.01
P
W
=100ms
P
W
=10ms
P
W
=1ms
2
0
0.1
1
10
100
0
2
4
6
8
10
12
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area
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DMN3032LFDB
Document number: DS35730 Rev. 5 – 2
DMN3032LFDB
1
D=0.5
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D
=
0
.
0
1
D=0.005
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
J
A
=
124
℃
/W
Du
t
y
Cycle, D=t1 /
t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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DMN3032LFDB
Document number: DS35730 Rev. 5 – 2
DMN3032LFDB
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
Seating Plane
U-DFN2020-6
Type B
Dim
A
A1
A3
b
D
D2
e
Min
Max Typ
D
0.545 0.605 0.575
0.00 0.05 0.02
–
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
D2
D2
–
0.13
R
0
.150
–
–
0.65
z1
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
E
E2
z1
–
–
0.45
k
L
0.25 0.35 0.30
z
z1
–
–
–
–
0.225
0.175
L
All Dimensions in mm
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
C
G
G1
X
X1
X2
Y
Y1
Y2
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
X1(2x)
Y1(2x)
Y2
G
Y
G1
X
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January 2020
© Diodes Incorporated
DMN3032LFDB
Document number: DS35730 Rev. 5 – 2
DMN3032LFDB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
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January 2020
© Diodes Incorporated
DMN3032LFDB
Document number: DS35730 Rev. 5 – 2
