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DMN3032LFDBQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
100% Unclamped Inductive Switching
–
Ensures More Reliable
and Robust Application
I
D
Max
T
A
= +25°C
V
(BR)DSS
R
DS(ON)
Max
Low On-Resistance
–
Minimizes Power Losses
Low Gate Charge
–
Minimizes Switching Losses
Small Form Factor Low Profile Package
–
Increased Power
Density
6.2A
5.2A
30
mΩ @ V
GS
= 10V
42mΩ @ V
GS
= 4.5V
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Description and Applications
Case: U-DFN2020-6
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and ideal for use in:
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Body Control Electronics
Power Management Functions
DC-DC Converters
Terminals: Finish NiPdAu Annealed over Copper Leadframe.
e4
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
D1
D2
S2
S2
G2
D2
D1
D1
G1
G2
D2
G1
S1
S1
Pin1
Bottom View
Internal Schematic
Ordering Information
(Notes 4 & 5)
Part Number
Case
Packaging
DMN3032LFDBQ
-7
DMN3032LFDBQ
-13
U-DFN2020-6
U-DFN2020-6
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
N5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
N5
M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
Code
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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October 2015
© Diodes Incorporated
DMN3032LFDBQ
Document number: DS37981 Rev. 2 – 2
DMN3032LFDBQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +75°C
6.2
5.0
A
Continuous Drain Current (Note 7) V
GS
= 10V
I
D
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
2
A
A
I
S
25
12
10
I
DM
I
AS
E
AS
A
Avalanche Energy (Note 8) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
1.0
127
75
1.7
72
Unit
W
Total Power Dissipation (Note 6)
P
D
Steady state
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
°C/W
W
R
JA
t<10s
P
D
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
43
9
°C/W
°C
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Zero Gate Voltage Drain Current T
J
= +150°C (Note 10)
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
–
–
–
–
–
–
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V
1.0
μ
A
μA
nA
–
100
±100
I
DSS
–
I
GSS
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1.0
1.5
25
2.0
30
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.8A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
–
–
30
42
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
0.75
1.2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
500
52
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
44
2.3
5.0
10.6
1.3
1.8
2.2
2.6
9.7
2.0
V
DS
= 0V, V
GS
= 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
V
DS
= 15V, I
D
= 5.8A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6
Ω, R
G
= 3
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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October 2015
© Diodes Incorporated
DMN3032LFDBQ
Document number: DS37981 Rev. 2 – 2
DMN3032LFDBQ
20
18
16
14
12
10
8
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
=4.0V
V
GS
=10.0V
V
DS
=5V
V
GS
=3.5V
V
GS
=4.5V
V
GS
=3.0V
T
A
=150
℃
T
A
=125
℃
T
A
=85
℃
6
V
GS
=2.5V
4
T
A
=25
℃
2
T
A
=-55
℃
V
GS
=2.0V
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.05
0.04
0.03
0.02
0.01
0
0.1
0.08
0.06
0.04
0.02
0
I
D
=3.6A
V
GS
=4.5V
V
GS
=10V
I
D
=2.8A
1
3
5
7
9
11 13 15 17 19 21
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance
vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
0.05
0.045
0.04
1.8
1.6
1.4
1.2
1
V
GS
= 10V
150
℃
V
GS
=10V, I
D
=5.0A
125
℃
85
℃
0.035
0.03
0.025
0.02
25
℃
V
GS
=4.5V, I
D
=3.0A
0.015
0.01
-55
℃
0.8
0.6
0.005
0
2
4
6
8
10 12 14 16 18 20
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
0
25
50
75 100
125 150
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
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October 2015
© Diodes Incorporated
DMN3032LFDBQ
Document number: DS37981 Rev. 2 – 2
DMN3032LFDBQ
2
1.8
1.6
1.4
1.2
1
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
=1mA
V
GS
=4.5V, I
D
=3.0A
I
D
=250
m
A
V
GS
=10V, I
D
=5.0A
0.8
0.6
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
20
18
16
14
12
10
8
1000
100
10
f=1MHz
C
iss
V
GS
=0V, T
A
=150
℃
V
GS
=0V, T
A
=125
℃
V
GS
=0V, T
A
=85
℃
C
oss
6
V
GS
=0V, T
A
=25
℃
C
rss
4
V
GS
=0V,
T
A
=-55
℃
2
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10000
1000
100
10
10
8
T
A
=150
℃
T
A
=125
℃
6
T
A
=85
℃
T
A
=25
℃
V
DS
=15V, I
D
=3.6A
4
1
2
0.1
0
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
DS
, Drain-SOURCE VOLTAGE (V)
Qg,TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
Figure 12. Typical Drain-Source Leakge Current vs.
Voltage
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October 2015
© Diodes Incorporated
DMN3032LFDBQ
Document number: DS37981 Rev. 2 – 2
DMN3032LFDBQ
100
10
R
DS(ON)
Limited
P
W
=100µs
DC
1
P
W
=10s
P
W
=1s
P
W
=100ms
P
W
=10ms
P
W
=1ms
0.1
0.01
T
J(Max)
=150
℃
T
A
=25
℃
Single Pulse
DUT on 1*MRP board
V
GS
=4.5V
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
D=0.5
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D
=
0
.
0
1
D=0.005
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=124
℃
/W
D=Single Pulse
0.0001
Duty Cycle, D=t1 /
t2
0.001
1E-05
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
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October 2015
© Diodes Incorporated
DMN3032LFDBQ
Document number: DS37981 Rev. 2 – 2
DMN3032LFDBQ
Package Outline Dimensions
A3
A1
A
Seating Plane
U-DFN2020-6
Type B
Dim
A
A1
A3
b
D
D2
e
Min
Max Typ
D
0.545 0.605 0.575
0.00 0.05 0.02
–
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
D2
D2
–
0.13
R
0
.150
–
–
0.65
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
z1
E
E2
z1
–
–
0.45
k
L
z
z1
0.25 0.35 0.30
–
–
–
–
0.225
0.15
All Dimensions in mm
L
e
z
b
Suggested Pad Layout
X2
C
Value
(in mm)
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
Dimensions
C
G
G1
X
X1
X2
Y
Y1
Y2
X1( 2x)
Y1( 2x)
Y2
G
Y
G1
X
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October 2015
© Diodes Incorporated
DMN3032LFDBQ
Document number: DS37981 Rev. 2 – 2
DMN3032LFDBQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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October 2015
© Diodes Incorporated
DMN3032LFDBQ
Document number: DS37981 Rev. 2 – 2
