Diodes-Incorporated-DMN3033LSNQ-13

DMN3033LSN  

N-CHANNEL ENHANCEMENT MODE MOSFET  

Features  

Mechanical Data  

•

•

Low Gate Charge  

Low R

DS(ON)  

•

•

Case: SC59  

:

Case Material – Molded Plastic, “Green” Molding Compound.  

UL Flammability Classification Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish – Matte Tin Annealed over Copper Leadframe.  

•

•

30m

Ω

@V

GS

= 10V  

40m

Ω

@V

GS

= 4.5V  

•

•

•

•

•

•

Low Input/Output Leakage  

e3  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

Qualified to AEC-Q101 Standards for High Reliability  

Solderable per MIL-STD-202, Method 208  

Terminal Connections: See Diagram  

Weight: 0.014 grams (Approximate)  

•

•

Drain  

D

SC59  

Gate  

S

G

Source  

Top View  

Equivalent Circuit  

Pin Configuration  

Ordering Information

 

(Note 4)  

Part Number  

Case  

Packaging  

DMN3033LSN-7  

SC59  

3000/Tape & Reel  

Notes:  

1

. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  

2. Se

r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”  

and Lead-free.  

3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

4. For packaging details, go to our website at

.

Marking Information  

A5 = Product Type Marking Code  

YM = Date Code Marking  

Y = Year (ex: D = 2016)  

A5  

M = Month (ex: 9 = September)  

Date Code Key  

Year  

2007  

~

2016  

2017  

2018  

2019  

2020  

2021  

2022  

Code  

U

~

D

E

F

G

H

I

J

Month  

Code  

Jan  

1

Feb  

2

Mar  

3

Apr  

4

May  

5

Jun  

6

Jul  

7

Aug  

8

Sep  

9

Oct  

O

Nov  

N

Dec  

D

1 of 5  

July 2016  

© Diodes Incorporated  

DMN3033LSN  

Document number: DS31116 Rev. 7 – 2  

DMN3033LSN  

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Drain-Source Voltage  

Symbol  

V

DSS  

Value  

30  

Unit  

V

Gate-Source Voltage  

V

±

20  

V

GSS  

Continuous Drain Current (Note 5)  

T

A

= +25°C  

T

A

= +70°C  

6

5

A

I

D  

Pulsed Drain Current (Note 6)  

24  

A

A

I

DM  

I

S  

Body-Diode Continuous Current (Note 5)  

2.25  

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Total Power Dissipation (Note 5)  

Symbol  

P

D  

R

θ  

Value  

1.4  

Unit  

W

Thermal Resistance, Junction to Ambient (Note 5) t

≤10s  

90  

°

C/W  

°

C  

JA  

Operating and Storage Temperature Range  

-55 to +150  

T

J

, T

STG  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

STATIC PARAMETERS  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

30  

V

BV

DSS  

I

DSS  







1

5

I

D

= 250

µ

A, V

GS

= 0V  

T

J

= +25

°

C  

T

J

= +55

°

C  



µ

A  

V

DS

= 30V, V

GS

= 0V  

Gate-Body Leakage Current  

Gate Threshold Voltage  

nA  

V



1.0  





25  

36  

±

100  

2.1  

I

GSS  

V

DS

= 0V, V

GS

=

±

20V  

V

DS

= V

GS

, I

D

= 250

µ

A  

V

GS

= 10V, I

D

= 6A  

V

GS

= 4.5V, I

D

= 5A  

V

DS

= 10V, I

D

= 8A  

I

S

= 2.25A, V

GS

= 0V  

V

GS(TH)  

30  

40  

Static Drain-Source On-Resistance (Note 7)  



m

Ω  

R

DS(ON)  

Forward Transconductance (Note 7)  

Diode Forward Voltage (Note 7)  

DYNAMIC PARAMETERS (Note 8)  

Total Gate Charge  

5

S

V

g

FS  







1.1  

0.7  

V

SD  

10.5  

3.8  

2.9  

11  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

pF  

pF  

pF  

Q

g  

Q

gs  

Q

gd  

t

D(ON)  

t

R  









































V

GS

= 5V, V

DS

= 15V, I

D

= 6A  

V

GS

= 10V, V

DS

= 15V, I

D

= 6A  

V

GS

= 10V, V

DS

= 15V, I

D

= 6A  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Turn-On Rise Time  

7

V

DD

= 15V, V

GS

= 10V,  

R

D

= 1.8

Ω

, R

G

= 6

Ω  

Turn-Off Delay Time  

63  

t

D(OFF)  

t

F  

Turn-Off Fall Time  

30  

Input Capacitance  

755  

136  

108  

C

iss  

C

oss  

C

rss  

V

DS

= 10V, V

GS

= 0V  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Notes:  

5. Device mounted on 1″x1″, FR-4 PC board with 2 oz. Copper and test pulse width t

≤

10s.  

6. Repetitive Rating, pulse width limited by junction temperature.  

7. Test pulse width t = 300ms.  

8. Guaranteed by design.

 

Not subject to production testing.  

2 of 5  

July 2016  

© Diodes Incorporated  

DMN3033LSN  

Document number: DS31116 Rev. 7 – 2  

DMN3033LSN  

20  

18  

16  

V

= 5V  

DS  

Pulsed  

14  

12  

10  

8

6

4

2

0

0

1

2

3

4

0.06  

0.05  

1,200  

1,000  

f = 1 MHz  

V

= 0V  

GS  

800  

600  

C

iss  

0.04  

0.03  

V

= 4.5V  

GS  

400  

V

= 10V  

GS  

0.02  

0.01  

200  

0

C

oss  

C

rss  

0

5

10  

15  

20  

25  

30  

0

2

4

6

8

10 12 14 16 18 20  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

I

D

, DRAIN CURRENT (A)  

Fig. 4

 

Typical

T

o

tal Capacitance  

Fig. 3

 

On-Resistance vs. Drain Current and Gate Voltage  

2

V

= 10V  

= 6A  

GS  

I

1.5  

1

D

V

= 4.5V  

= 5A  

GS  

I

D

0.5  

0

-50 -25  

0

25  

50  

75 100 125

 

150  

(

o

C)  

T

A

, AMBIENT TEMPERATURE

(C)  

Fig. 6 Normalized Static Drain-Source On-Resistance  

vs. Ambient

T

emperature  

3 of 5  

July 2016  

© Diodes Incorporated  

DMN3033LSN  

Document number: DS31116 Rev. 7 – 2  

DMN3033LSN  

Package Outline Dimensions  

Please see

the latest version.  

SC59  

Min  

0.35  

1.50  

2.70  

–

A

Dim  

A

B

C

D

G

H

J

K

L

Max  

0.50  

1.70  

3.00  

–

Typ  

0.38  

1.60  

2.80  

0.95  

1.90  

3.00  

0.05  

1.10  

0.40  

0.15  

0.75  

–

C

B

–

–

G

H

2.90  

3.10  

0.013 0.10  

1.00  

0.35  

0.10  

0.70  

0°  

1.30  

0.55  

0.20  

0.80  

8°  

K

J

M

N

M

N

α

L

D

All Dimensions in mm  

Suggested Pad Layout  

Please see

the latest version.  

Dimensions Value

 

(in mm)  

Y

Z

X

Y

C

E

3.4  

0.8  

1.0  

2.4  

1.35  

Z

C

X

E

4 of 5  

July 2016  

© Diodes Incorporated  

DMN3033LSN  

Document number: DS31116 Rev. 7 – 2  

DMN3033LSN  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others.

 

Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending.

 

Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference.

 

Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated.

 

Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2016, Diodes Incorporated  

5 of 5  

July 2016  

© Diodes Incorporated  

DMN3033LSN  

Document number: DS31116 Rev. 7 – 2