Diodes-Incorporated-DMN3042L-7
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DMN3042L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
Low On-Resistance
V
(BR)DSS
R
DS(ON)
max
I
D
max
5.8A
Low Gate Threshold Voltage
Low Input Capacitance
26.5m
Ω
@ V
GS
= 10V
32m
Ω
@ V
GS
= 4.5V
Fast Switching Speed
30V
5.0A
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
•
•
•
•
•
•
Battery Charging
Power Management Functions
DC-DC Converters
•
•
Portable Power Adaptors
SOT23
D
D
G
S
G
S
Internal Schematic
Top View
Top View
Ordering Information
(Note 4)
Part Number
DMN3042L-7
DMN3042L-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html fo
r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SOT23
4L = Product Type Marking Code
YM = Date Code Marking
Y or
Y
̅
= Year (ex: B = 2014)
M = Month (ex: 9 = September)
4L
Date Code Key
Year
Code
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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January 2015
© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
Maximum Ratings
(@T
A
= +25
°
C
u
nless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
12
V
GSS
Steady
Continuous Drain Current (Note 6) V
GS
= 10V
State
T
A
= +25
°
C
T
A
= +70
°
C
5.8
4.0
A
I
D
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
1.5
30
A
A
I
S
I
DM
Thermal Characteristics
Characteristic
Symbol
Value
0.72
171
1.4
Unit
W
Power Dissipation (Note 5)
P
D
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
Steady State
Steady State
°
C
/W
W
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
93
°
C
/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25
°
C
u
nless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
1
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
12V, V
DS
= 0V
µA
nA
100
I
GSS
=
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.6
1.4
26.5
32
V
m
Ω
V
21
23
29
0.7
V
GS(th)
R
DS (ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 2.5V, I
D
= 4.0A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
48
Diode Forward Voltage
1.2
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
570
63
860
95
80
4.5
20
8
C
iss
C
oss
C
rss
R
G
Q
g
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
53
3.2
13.3
6.1
1.0
1.6
1.5
3.3
13.9
4.9
7.8
1.9
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
(V
GS
= 10V)
Total Gate Charge
(V
GS
= 4.5V)
Gate-Source Charge
Q
g
nC
nS
V
DS
= 15V, I
D
= 6.9A
1.5
2.5
2.4
5
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= 10V, V
DD
= 15V, R
G
= 3
Ω
,
I
D
= 6.9A
Turn-Off Delay Time
22
7
t
D(off)
t
f
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12
3
nS
nC
t
rr
I
S
= 5A, dI/dt = 100A/
µ
s
I
S
= 5A, dI/dt = 100A/
µ
s
Q
rr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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January 2015
© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
30
25
20
18
V
= 2
.
5
V
GS
V
= 5
.
0
V
DS
V
= 3
.
0
V
GS
16
14
12
10
8
V
= 4
.
0
V
GS
20
15
10
V
V
= 4
.
5
V
GS
V
= 2
.
0
V
GS
= 10
.
0
V
GS
T
= 150
°
C
A
T
= 125
°
C
A
6
T
= 85
°
C
A
4
5
0
T
= 25
°
C
A
2
V
= 1
.
5
V
GS
T
A
= -55
°
C
0
0
0
0.5
1
1.5
2
2.5
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
V
G
S
, GATE-SOURCE VOL
T
A
GE (V)
Figure 2
T
y
pical Transfer Characteristics
0.028
0.026
0.024
0.022
0.2
I
= 5
.
8
A
D
0.16
V
= 4
.
5
V
GS
0.12
0.08
V
= 10V
GS
0.02
0.04
0
I
= 5
.
0
A
D
0.018
0
5
10
15
20
25
30
0
2
4
6
8
10
12
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V
)
Figure 4
T
y
pical Transfer Characteristic
0.04
0.035
0.03
1.8
1.6
1.4
V
= 10V
GS
V
= 4
.
5
V
= 5
.
0
A
GS
T
T
= 150
°
C
= 125
°
C
A
A
I
D
V
= 10V
GS
I
= 5
.
8
A
D
V
= 2
.
5
V
GS
I
= 4
.
0
A
T
= 85
°
C
= 25
°
C
D
A
0.025
0.02
1.2
1
T
A
A
0.015
0.01
0.8
0.6
T
= -55
°
C
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25
50
75 100 125
150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
erature
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
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January 2015
© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
0.05
0.04
1.2
1.1
1
V
= 2
.
5
V
= 10A
GS
I
= 1mA
D
I
D
0.9
0.8
0.7
I
= 250µA
D
0.03
V
I
= 10V
GS
= 5
.
8
A
D
0.6
V
= 4
.
5
V
GS
0.02
0.01
0.5
0.4
0.3
I
= 5
.
0
A
D
–
5
0
–
2
5
0
25
50
75 100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
20
16
12
8
10000
T
= 150
°
C
f = 1MHz
A
T
= 125
°
C
A
1000
C
i
s
s
T
= 85
°
C
A
100
C
o
s
s
C
r
s
s
4
T
= 25
°
C
A
T
= -55
°
C
A
0
0
10
0
0.3
0.6
0.9
1.2
1.5
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V
)
Figure 10 Typical Junction Capacitance
V
S
D
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
10
100
10
1
R
Limited
D
S
(
on)
V
= 15V
DS
8
6
4
2
0
I
= 6
.
9
A
D
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
0.1
T
=
1
50
°
C
J(
m
ax)
P
= 10ms
W
T
=
2
5
°
C
A
V
=
1
0V
Si
n
g
l
e P
u
l
se
P
= 1ms
GS
W
P
= 100µs
W
DUT on 1 * MRP Board
0.01
0.1
0
2
4
6
8
10
12
14
1
10
100
V
D
S
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
D = 0
.
0
05
0.01
R
t
h
j
a
(t) = r(t) * R
t
h
ja
R
t
h
ja
= 168
°
C
/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
0.1
1
10 100
1000
Package Outline Dimensions
SOT23
Min Max
Dim
A
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.51
1.40
2.50
B
C
D
1.03 0.915
0.60 0.535
F
G
H
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
0.890 1.00 0.975
0.903 1.10 1.025
K1
L
0.45
0.25
0.61
0.55
0.55
0.40
L1
M
a
0.085 0.150 0.110
8°
All Dimensions in mm
Suggested Pad Layout
Dimensions Value
(in mm)
Y
Z
X
Y
C
E
2.9
0.8
Z
0.9
2.0
C
1.35
E
X
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January 2015
© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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January 2015
© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
