Diodes-Incorporated-DMN3053L-13
| Part # | Diodes-Incorporated-DMN3053L-13 |
Download  | Diodes-Incorporated-DMN3053L-13 |
DMN3053L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
V
(BR)DSS
R
DS(ON)
T
A
= +25°C
Low Gate Threshold Voltage
Low Input Capacitance
4.0 A
3.5A
45m
Ω
@ V
GS
= 10V
50m
Ω
@ V
GS
= 4.5V
30V
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SOT23
Applications
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper
Load Switch
DC-DC Converters
Power management functions
e3
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
SOT23
D
S
G
ESD PROTECTED
Equivalent Circuit
Top View
Top View
Ordering Information
(Note 4)
Part Number
DMN3053L-7
DMN3053L-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
3N6 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
̅
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
̅
Shanghai A/T Site
Chengdu A/T Site
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
April 2014
© Diodes Incorporated
DMN3053L
Document number: DS36883
Rev. 2 – 2
DMN3053L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
±12
V
GSS
T
A
= +25°C
Steady
State
4.0
3.5
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
T
A
= +70°C
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
35
A
A
I
DM
I
S
1.5
Thermal Characteristics
Characteristic
Symbol
Value
Units
0.76
0.48
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
T
A
= +70°C
Steady state
t<10s
165
°C/W
°C/W
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
114
1.2
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
W
P
D
0.8
100
°C/W
°C/W
°C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
69
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
BV
DSS
I
DSS
1
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
µA
µA
±10
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.6
1.4
V
m
Ω
V
V
GS(th)
R
DS (ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4.0A
V
GS
= 4.5V, I
D
=3.5A
V
GS
= 3.0V, I
D
=3.0A
V
GS
= 2.5V, I
D
=2.8A
36
38
42
44
45
50
53
55
Static Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
0.7
1.2
V
GS
= 0V, I
S
= 1.25A
676
54
pF
pF
pF
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
42
Reverse Transfer Capacitance
Gate Resistance
15.5
7.3
17.2
1.2
0.9
2.0
5.5
152
32
V
DS
= V
GS
= 0V,f = 1.0MHz
V
DS
= 15V, I
D
= 4A
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
L
= 15
ꢀ
, R
G
= 6
ꢀ
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 6
April 2014
© Diodes Incorporated
DMN3053L
Document number: DS36883
Rev. 2 – 2
DMN3053L
20
18
16
14
12
10
8
20
18
16
14
12
10
8
V
= 2.5V
V
= 10V
= 4.5V
GS
GS
V
= 5.0V
DS
V
GS
V
= 3.0V
GS
V
= 2.0V
GS
V
= 3.5V
GS
T
= 150°C
A
6
6
V
= 1.5V
GS
T
= 85°C
A
4
4
T
= 125°C
A
T
= 25°C
A
2
2
T
= -55°C
A
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Figure 1 Typical Output Characteristics
0.06
0.08
V
= 4.5V
GS
0.075
0.055
T
= 150°C
A
V
= 2.5V
0.07
GS
0.065
0.05
0.045
0.04
0.06
0.055
0.05
T
= 125°C
A
T
= 85°C
A
V
= 4.5V
GS
V
= 10V
GS
T
= 25°C
T
0.045
0.04
A
0.035
0.03
= -55°C
A
0.035
0.03
0.025
0.02
0.025
0.02
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and
T
e
mperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1
0.08
0.07
V
= 4.5V
GS
I
= 3.5A
V
= 4.5V
D
GS
I
= 3.5A
D
V
= 2.5V
GS
0.06
0.05
0.04
0.03
0.02
0.01
0
I
= 2.8A
D
V
= 10V
= 4A
V
= 10V
= 4A
GS
GS
I
I
D
D
0.8
0.6
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 5 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
C)
Figure 6 On-Resistance Variation with
T
emperature
T
J
, JUNCTION TEMPERATURE (
C)
3 of 6
April 2014
© Diodes Incorporated
DMN3053L
Document number: DS36883
Rev. 2 – 2
DMN3053L
1.5
1.2
20
18
16
14
12
10
8
0.9
0.6
I
= 1mA
T
= 150°C
D
A
I
= 250µA
D
T
= 125°C
= 85°C
A
T
A
= 25°C
A
6
4
T
A
0.3
0
T
= -55°C
2
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100
125 150
C)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 7 Gate Threshold Variation vs. Ambient
T
e
mperature
10000
10
8
f = 1MHz
1000
C
iss
6
V
I
= 15V
DS
= 4A
D
4
2
0
100
C
oss
C
rss
10
0
2
4
6
8
10 12 14 16 18
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Q
g
, TO
T
A
L GATE CHARGE (nC)
Figure 10 Gate Charge
100
Rds(on)
Limited
10
1
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
0.1
T
= 150C
J(MAX)
P
= 1ms
W
T
= 25C
A
P
= 100µs
V
= 4.5V
W
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 11 SOA, Safe Operation Area
4 of 6
April 2014
© Diodes Incorporated
DMN3053L
Document number: DS36883
Rev. 2 – 2
DMN3053L
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
0.001
R
JA
(t) = r(t) * R
R
JA
= 62°C/W
Duty Cycle, D = t1/ t2
JA
D = Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
A
ll
7
°
SOT23
H
Dim
A
B
C
D
F
G
H
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
5 of 6
April 2014
© Diodes Incorporated
DMN3053L
Document number: DS36883
Rev. 2 – 2
DMN3053L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
6 of 6
April 2014
© Diodes Incorporated
DMN3053L
Document number: DS36883
Rev. 2 – 2
