Diodes-Incorporated-DMN3060LVT-13

DMN3060LVT  

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  

Product Summary  

Features and Benefits  













Low On-Resistance  

I

D  

BV

DSS  

R

DS(ON)  

T

A

= +25°C  

Low Input Capacitance  

Fast Switching Speed  

3.6A  

2.7A  

60m

Ω

@ V

GS

= 10V  

100m

Ω

@ V

GS

= 4.5V  

30V  

Low Input/Output Leakage  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

Description  

Mechanical Data  

This new generation MOSFET is designed to minimize the on-state  

resistance (R

DS(ON)

) and yet maintain superior switching performance,  

making it ideal for high efficiency power management applications.  





Case: TSOT26  

Case Material: Molded

Plastic, “Green” Molding Compound

.  

UL Flammability Classification Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals Connections: See Diagram  







Applications  







Backlighting  

Terminals: Finish

–

Matte Tin Annealed over Copper Leadframe.  

Solderable per MIL-STD-202, Method 208  

Weight: 0.013 grams (Approximate)  

DC-DC Converters  

Power Management Functions  



D1  

D2  

TSOT26  

G1  

S2  

G2  

1

2

3

6

5

4

D1  

S1  

D2  

G1  

G2  

S1  

Q1 N-Channel  

S2  

Q2 N-Channel  

Top View  

Top View  

Ordering Information

(Note 4)  

Part Number  

DMN3060LVT-7  

DMN3060LVT-13  

Case  

TSOT26  

TSOT26  

Packaging  

3,000 / Tape & Reel  

10,000 / Tape & Reel  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

2. See

r more information about Diodes Incorporated’s definitions of Halogen

– and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-free “Gre

en” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

4. For packaging details, go to our website a

Marking Information  

TSOT26  

AN7 = Product Type Marking Code  

YM = Date Code Marking  

Y = Year (ex: G = 2019)  

M = Month (ex: 9 = September)  

Date Code Key  

Year  

2019  

2020  

2021  

2022  

2023  

2024  

2025  

Code  

G

H

I

J

K

L

M

Month  

Code  

Jan  

1

Feb  

2

Mar  

3

Apr  

4

May  

5

Jun  

6

Jul  

7

Aug  

8

Sep  

9

Oct  

O

Nov  

N

Dec  

D

1 of 7  

August 2019  

© Diodes Incorporated  

DMN3060LVT  

Document number: DS41714 Rev. 3 – 2  

DMN3060LVT  

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Drain-Source Voltage  

Symbol  

V

DSS  

Value  

30  

Unit  

V

Gate-Source Voltage  

±12  

V

V

GSS  

Steady  

T

A

= +25°C  

T

A

= +70°C  

3.6  

2.8  

A

Continuous Drain Current (Note 6) V

GS

= 4.5V  

State  

I

D  

A

A

Maximum Continuous Body Diode Forward Current (Note 6)  

1.1  

16  

I

S  

Pulsed Drain Current (10



s Pulse, Duty Cycle = 1%)  

I

DM  

Thermal Characteristics  

Characteristic  

Power Dissipation (Note 5)  

Symbol  

P

D  

Value  

0.83  

Unit  

W

151  

°C/W  

W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)  

Power Dissipation (Note 6)  

R

θ

JA  

1.16  

P

D  

108  

°C/W  

°C  

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 6)  

Operating and Storage Temperature Range  

R

θ

JA  

-55 to +150  

T

J

,

T

STG  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS (Note 7)  

Drain-Source Breakdown Voltage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

30  

—

—

—

—

—

—

1.0  

V

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 24V, V

GS

= 0V  

V

GS

= ±12V, V

DS

= 0V  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

µA  

nA  

±100  

I

GSS  

ON CHARACTERISTICS (Note 7)  

Gate Threshold Voltage  

0.7  

—

—

1.8  

V

m

Ω  

V

V

GS(TH)  

R

DS(ON)  

V

SD  

V

DS

= V

GS

, I

D

= 250

μA  

V

GS

= 10V, I

D

= 3.1A  

V

GS

= 4.5V, I

D

= 2A  

V

GS

= 3.3V, I

D

= 1.5A  

V

GS

= 0V, I

S

= 1A  

42  

45  

48  

60  

100  

150  

Static Drain-Source On-Resistance  

Diode Forward Voltage  

DYNAMIC CHARACTERISTICS (Note 8)  

Input Capacitance  

—

0.8  

1.0  

—

—

—

—

—

—

—

—

—

—

—

—

395  

39  

—

—

—

—

—

—

—

—

—

—

—

—

C

iss  

C

oss  

C

rss  

R

g  

V

DS

= 15V, V

GS

= 0V,  

f = 1.2MHz  

Output Capacitance  

pF  

Reverse Transfer Capacitance  

Gate Resistance  

26  

3.1  

5.6  

11.3  

0.2  

1.8  

5.8  

30.8  

18.3  

2.7  

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz  

Total Gate Charge (V

GS

= 4.5V)  

Total Gate Charge (V

GS

= 10V)  

Gate-Source Charge  

Gate-Drain Charge  

Q

g  

V

DS

= 15V, V

GS

= 4.5V, I

D

= 3.1A  

Q

g  

nC  

ns  

Q

gs  

Q

gd  

t

D(ON)  

t

R  

V

DS

= 15V, V

GS

= 10V, I

D

= 3A  

Turn-On Delay Time  

Turn-On Rise Time  

V

GS

= 10V, V

DS

= 15V,  

R

G

= 3

Ω

, R

L

= 4.7

Ω  

Turn-Off Delay Time  

t

D(OFF)  

t

F  

Turn-Off Fall Time  

Notes:  

5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.  

6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.  

7. Short duration pulse test used to minimize self-heating effect.  

8. Guaranteed by design. Not subject to production testing.  

2 of 7  

August 2019  

© Diodes Incorporated  

DMN3060LVT  

Document number: DS41714 Rev. 3 – 2  

DMN3060LVT  

20  

15  

10  

5

18.0  

16.0  

14.0  

12.0  

10.0  

8.0  

V

GS

=10.0V  

V

GS

= 4.5V  

V

GS

= 4.0V  

V

GS

= 3.8V  

V

DS

= 5V  

V

GS

= 2.2V  

V

GS

= 3.5V  

V

GS

= 3.0V  

V

GS

= 2.5V  

V

GS

= 1.8V  

6.0  

T

J

= 150

℃

 

4.0  

T

J

= 125

℃  

T

J

= 85

℃  

T

J

= 25

℃  

T

J

=-55

℃  

2.0  

0

0.0  

0

1

2

3

4

0

0.5  

1

1.5  

2

2.5  

3

V

GS

, GATE-SOURCE VOLTAGE (V)  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Figure 1.Typical Output Characteristic  

Figure 2. Typical Transfer Characteristic  

0.07  

0.065  

0.06  

0.07  

0.06  

0.05  

0.04  

0.03  

0.02  

V

GS

= 3.3V  

V

GS

= 4.5V  

0.055  

0.05  

V

GS

= 10V  

I

D

= 2A  

I

D

= 3.1A  

0.045  

0.04  

I

D

=1.5A  

0.035  

0

2

4

6

8

10  

12  

0

5

10  

15  

20  

V

GS

, GATE-SOURCE VOLTAGE (V)  

I

D

, DRAIN-SOURCE CURRENT (A)  

Figure 4. Typical Transfer Characteristic  

Figure 3. Typical On-Resistance vs. Drain Current and  

Gate Voltage  

1.6  

0.14  

0.12  

0.1  

T

J

= 150

℃  

V

GS

=10V  

1.4  

1.2  

1

T

J

= 125

℃  

T

J

= 85

℃  

0.08  

0.06  

0.04  

0.02  

0

V

GS

= 10V, I

D

= 3.1A  

T

J

= 25

℃  

T

J

= -55

℃  

0.8  

0.6  

V

GS

= 4.5V, I

D

= 2A  

V

GS

= 3.3V, I

D

= 1.5A  

-50 -25  

0

25  

50  

75 100

 

125 150  

0

5

10  

15  

20  

I

D

, DRAIN CURRENT (A)  

T

J

, JUNCTION TEMPERATURE (

℃

)  

Figure 5. Typical On-Resistance vs. Drain Current and  

Temperature  

Figure 6. On-Resistance Variation with Temperature  

3 of 7  

August 2019  

© Diodes Incorporated  

DMN3060LVT  

Document number: DS41714 Rev. 3 – 2  

DMN3060LVT  

1.4  

1.2  

1

0.08  

0.07  

0.06  

0.05  

0.04  

0.03  

0.02  

I

D

= 1mA  

V

GS

= 3.3V, I

D

= 1.5A  

0.8  

0.6  

0.4  

0.2  

0

V

GS

= 4.5V, I

D

= 2A  

I

D

= 250

μ

A  

V

GS

= 10V, I

D

= 3.1A  

-50 -25  

0

25  

50  

75 100

 

125 150  

-50 -25  

0

25  

50  

75 100

 

125 150  

T

J

, JUNCTION TEMPERATURE (

℃

)  

T

J

, JUNCTION TEMPERATURE (

℃

)  

Figure 8. Gate Threshold Variation vs.  

JunctionTemperature  

Figure 7. On-Resistance Variation with Temperature  

10000  

20  

15  

10  

5

f=1MHz  

V

GS

= 0V  

1000  

100  

10  

C

iss  

T

J

= 85

℃  

T

J

= 150

℃  

T

J

= 25

℃  

T

J

= 125

℃  

C

oss  

T

J

= -55

℃  

C

rss  

0

0

10  

20  

30  

0

0.3  

0.6  

0.9  

1.2  

1.5  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Figure 10. Typical Junction Capacitance  

V

SD

, SOURCE-DRAIN VOLTAGE (V)  

Figure 9. Diode Forward Voltage vs. Current  

100  

10  

8

R

DS(ON)

LIMITED  

P

W

=10ms  

P

W

=1ms  

10  

1

P

W

=100

μ

s  

6

V

DS

= 15V, I

D

= 3A  

P

W

=100ms  

4

T

J(MAX)

=150

℃  

T

C

=25

℃  

P

W

=1s  

0.1  

0.01  

Single Pulse  

DUT on1*MRP  

board  

2

P

W

=10s  

DC  

V

GS

=10V  

0

0.1  

1

10  

100  

0

3

6

9

12  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Qg (nC)  

Figure 12. SOA, Safe Operation Area  

Figure 11. Gate Charge  

4 of 7  

August 2019  

© Diodes Incorporated  

DMN3060LVT  

Document number: DS41714 Rev. 3 – 2  

DMN3060LVT  

1

D=0.9  

D=0.7  

D=0.5  

D=0.3  

0.1  

D=0.1  

D=0.05  

D=0.02  

D=0.01  

0.01  

D=0.005  

D=Single Pulse  

R

θ

JA

(t) = r(t) * R

θ

JA  

R

θ

JA

= 152.8

℃

/W  

Duty Cycle, D = t1 / t2  

0.001  

1E-05 0.0001 0.001  

0.01  

0.1  

1

10  

100  

1000 10000

 

100000 1000000  

t1, PULSE DURATION TIME (sec)  

Figure 13. Transient Thermal Resistance  

5 of 7  

August 2019  

© Diodes Incorporated  

DMN3060LVT  

Document number: DS41714 Rev. 3 – 2  

DMN3060LVT  

Package Outline Dimensions  

Please see

r the latest version.  

TSOT26  

D

e1  

01( 4x)  

TSOT26  

E1/2  

Dim  

A

Min  

Max  

Typ  



E/2  

1.00  

  

A1  

A2  

D

E

E1  

b

0.010 0.100  

0.840 0.900  

2.800 3.000 2.900  

2.800 BSC  

1.500 1.700 1.600  

0.300 0.450  

0.120 0.200  





c

E1  

E

Gauge Plane  

Seating Plane  

0

L





L2  

c

e

01( 4x)  

0.950 BSC  

e

b

e1  

L

1.900 BSC  

0.50  

A2  

0.30  



A1  

L2  

θ

θ1  

0.250 BSC  

8°  

A

0°  

4°  

4°  

12°  



Seating Plane  

All Dimensions in mm  

Suggested Pad Layout  

Please see

r the latest version.  

TSOT26  

C

Dimensions Value

 

(in mm)  

C

X

Y

0.950  

0.700  

1.000  

3.199  

Y1  

Y1  

Y

X

6 of 7  

August 2019  

© Diodes Incorporated  

DMN3060LVT  

Document number: DS41714 Rev. 3 – 2  

DMN3060LVT  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2019, Diodes Incorporated  

7 of 7  

August 2019  

© Diodes Incorporated  

DMN3060LVT  

Document number: DS41714 Rev. 3 – 2  

Mouser Electronics  

Authorized Distributor  

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