Diodes-Incorporated-DMN3110S-7
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DMN3110S
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
I
D
max
V
(BR)DSS
R
DS(ON)
max
T
A
= +25°C
73m
Ω
@ V
GS
= 10V
110m
Ω
@ V
GS
= 4.5V
3.3A
30V
2.7A
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
General Purpose Interfacing Switch
Power Management Functions
Boost Application
Analog Switch
Weight: 0.027 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN3110S-7
SOT-23
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
MN7 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
̅
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
̅
Shanghai A/T Site
Chengdu A/T Site
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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October 2013
© Diodes Incorporated
DMN3110S
Document number: DS31561 Rev. 3 – 2
DMN3110S
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
A
= +25°C
Steady
State
2.5
2.0
A
A
A
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
I
D
I
D
T
A
= +70°C
T
A
= +25°C
Steady
State
3.3
2.7
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
3.8
3.1
t
≦
10sec
Steady
State
2.7
2.1
A
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Pulsed Drain Current (Note 7)
I
D
T
A
= +70°C
25
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
Units
W
0.74
173.4
1.3
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
P
D
JA
JA
JA
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6) t
≦
10sec
99.1
°C/W
W
R
1.8
P
D
Thermal Resistance, Junction to Ambient (Note 6) t
≦
10sec
Operating and Storage Temperature Range
72
°C/W
°C
R
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
–
–
–
–
–
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
1.0
μ
A
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T
C
= +25°C
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
–
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
–
3.0
73
110
–
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
–
–
–
–
54
V
V
GS
= 10V, I
D
= 3.1A
GS
= 4.5V, I
D
= 2A
Static Drain-Source On-Resistance
m
Ω
R
DS (ON)
88
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
4.8
0.75
mS
V
|Y
fs
|
V
SD
V
DS
= 10V, I
D
= 3.1A
V
GS
= 0V, I
S
= 1A
1.0
–
–
–
–
–
–
–
–
–
–
–
–
305.8
39.9
39.5
1.4
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V,f = 1.0MHz
4.1
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
V
GS
= 10V, V
DS
= 10V,
8.6
Q
g
I
D
= 3A
1.2
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
1.5
Turn-On Delay Time
2.6
Turn-On Rise Time
4.6
V
DD
= 15V, V
GS
= 10V,
R
L
= 47
ꢀ
, R
G
= 3
ꢀ
,
Turn-Off Delay Time
13.1
2.5
t
D(off)
t
f
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, on 1inch square copper plate
7. Device mounted on minimum recommended pad layout test board, 10
μ
s pulse duty cycle = 1%
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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October 2013
© Diodes Incorporated
DMN3110S
Document number: DS31561 Rev. 3 – 2
DMN3110S
10.0
10
8
T
= 150
C
A
V
= 5.0V
DS
V
=4.0V
GS
T
= 125
C
A
8.0
6.0
T
= 25
C
A
V
=4.5V
GS
T
= 85
C
A
6
4
2
V
=3.5V
GS
4.0
2.0
0.0
T
= -55
C
A
V
=10V
GS
V
=3.0V
GS
V
=2.5V
GS
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
1
0.16
0.12
V
= 4.5V
GS
T
= 125
C
T
= 150
C
A
A
0.1
0.08
0.04
0
T
= 85
C
A
T
= 25
C
T
A
= -55
C
A
0.01
0
4
8
12
16
20
0
2
4
6
8
10
I
D
, DRAIN SOURCE CURRENT (A)
I
D
, DRAIN SOURCE CURRENT
Fig. 4
Typical On-Resistance vs.
Drain Current and
T
e
mperature
Fig. 3
Typical On-Resistance vs.
Drain Current and Gate Voltage
1.6
0.1
V
I
=4.5V
GS
=5A
D
0.08
1.4
1.2
0.06
0.04
0.02
V
I
=10V
GS
1
0.8
0.6
=10A
D
0
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Fig. 5
On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
Fig. 6
On-Resistance Variation with
T
emperature
50
75 100
125 150
C)
C)
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October 2013
© Diodes Incorporated
DMN3110S
Document number: DS31561 Rev. 3 – 2
DMN3110S
2.4
2
10
8
6
4
1.6
T =
25
C
A
1.2
0.8
2
0
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25
0
25
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient
T
emperature
50
75 100
125 150
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1000
10000
f = 1MHz
T
=150°C
A
1000
100
C
ISS
T
=125°C
A
100
T
=85°C
A
10
1
C
OSS
C
RSS
T
=-55°C
A
T
=25°C
A
0.1
10
0
2
4
6
8 10
12 14 16 18 20 22 24 26 28 30
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
10
8
6
4
2
0
0
2
4
6
8
10
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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October 2013
© Diodes Incorporated
DMN3110S
Document number: DS31561 Rev. 3 – 2
DMN3110S
1
0.1
0.01
R
R
(t)=r(t) * R
=54°C/W
JA
JA
JA
Duty Cycle, D=t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Fig. 12 Transient Thermal Resistance
Package Outline Dimensions
H
SOT23
G
A
U
G
E P
L
A
N
E
Dim
A
B
C
D
F
G
H
J
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.
2
5
J
0.40
1.30
2.40
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
L1
M
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
G
F
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
Z
C
1.35
E
X
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October 2013
© Diodes Incorporated
DMN3110S
Document number: DS31561 Rev. 3 – 2
DMN3110S
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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October 2013
© Diodes Incorporated
DMN3110S
Document number: DS31561 Rev. 3 – 2
