Diodes-Incorporated-DMN32D2LV-7
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DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
Dual N-Channel MOSFET
Case: SOT563
Low On-Resistance
Case Material:
Molded Plastic, “Green” Molding
Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
SOT563
D
2
G
1
S
1
S
2
G
2
D
1
Top View
Schematic and Transistor Diagram
Top View
ES
D
P
ROTECTED
Ordering Information
(Note 4)
Part Number
DMN32D2LV-7
Case
SOT563
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and
<1000ppm antimony compounds.
Marking Information
SOT563
G
S
1
D
2
1
DV = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
DV YM
M = Month (ex: 9 = September)
S
G
2
D
2
1
Date Code Key
Year
2007
—
2014
2015
2016
2017
2018
2019
2020
2021
Code
U
—
B
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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December 2015
© Diodes Incorporated
DMN32D2LV
Document number: DS31121 Rev. 10 – 2
DMN32D2LV
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Symbol
V
DSS
V
GSS
I
D
Value
30
Unit
V
Gate-Source Voltage
V
10
400
Drain Current (Note 5)
mA
Thermal Characteristics
Total Power Dissipation (Note 5)
450
313
mW
°C/W
°C
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
R
θ
JA
-55 to +150
T
J
, T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 6)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
30
V
1
1
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 30V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
GS
= ±2.5V, V
DS
= 0V
μ
A
@T
J
= +25°C
@T
J
= +25°C
10
500
100
μ
A
nA
nA
Gate-Body Leakage
I
GSS
Gate-Body Leakage (Note 7)
@T
J
= +105°C
@T
J
= +125°C
8
15
100
100
nA
nA
I
GSS
V
GS
= ±2.5V, V
DS
= 0V
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
0.6
1.2
V
V
GS(TH)
R
DS(ON)
|Y
FS
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 1.8V, I
D
= 20mA
V
GS
= 2.5V, I
D
= 20mA
V
GS
= 4.0V, I
D
= 100mA
V
DS
=10V, I
D
= 0.1A
100
0.5
2.2
1.5
1.2
Static Drain-Source On-Resistance
Ω
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 7)
Input Capacitance
mS
V
1.4
|
V
SD
V
GS
= 0V, I
S
= 115mA
39
10
3.6
11
51
pF
pF
pF
ns
ns
C
ISS
C
OSS
C
RSS
t
ON
V
DS
= 3V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V
DD
= 5V, I
D
= 10 mA,
V
GS
= 5V
Switching Time
t
OFF
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMN32D2LV
Document number: DS31121 Rev. 10 – 2
DMN32D2LV
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© Diodes Incorporated
DMN32D2LV
Document number: DS31121 Rev. 10 – 2
DMN32D2LV
1.8
1.6
V
I
= 4V
GS
= 100mA
D
1.4
1.2
1.0
V
I
= 2.5V
GS
= 20mA
D
V
I
= 1.8V
GS
= 20mA
D
0.8
0.6
-75 -50 -25
0
25 50 75
100 125 150
T
A
, AMBIENT TEMPERATURE (C°)
Fig. 7 Normalized Static Drain-Source On-Resistance
vs. Ambient
T
emperature
50
40
f = 1 MHz
C
iss
30
20
10
0
C
oss
C
rss
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
10000
1000
100
10000
1000
100
10
T
= 125°C
T
= 125°C
A
A
T
= 105°C
T
= 105°C
A
A
T
= 25°C
T
= 25°C
A
A
10
1
1
0.1
0.1
0
2
4
6
8
10
12
0
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig.11 Gate-Source
Leakage Current vs Voltage
12
V
GS
, GATE-SOURCE VOLTAGE (-V)
Fig.12 Gate-Source
Leakage Current vs Voltage
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December 2015
© Diodes Incorporated
DMN32D2LV
Document number: DS31121 Rev. 10 – 2
DMN32D2LV
Package Outline Dimensions
SOT563
A
SOT-563
Dim Min
Max Typ
A
B
C
D
G
H
K
L
0.15 0.30 0.20
1.10 1.25 1.20
1.55 1.70 1.60
B
C
—
—
0.50
0.90 1.10 1.00
1.50 1.70 1.60
0.55 0.60 0.60
0.10 0.30 0.20
0.10 0.18 0.11
D
G
H
M
All Dimensions in mm
M
K
L
Suggested Pad Layout
SOT563
C2
C2
Dimensions Value
(in mm)
Z
G
2.2
1.2
X
Y
0.375
0.5
C1
G
Y
C1
C2
1.7
0.5
Z
X
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December 2015
© Diodes Incorporated
DMN32D2LV
Document number: DS31121 Rev. 10 – 2
DMN32D2LV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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December 2015
© Diodes Incorporated
DMN32D2LV
Document number: DS31121 Rev. 10 – 2
