Diodes-Incorporated-DMN33D8LT-13
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DMN33D8L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
Low On-Resistance
I
D
max
T
A
= +25°C
250mA
V
(BR)DSS
R
DS(ON)
max
Low Input Capacitance
3.0
Ω
@ V
GS
= 10V
3.8
Ω
@ V
GS
= 5V
Fast Switching Speed
30V
200mA
Low Input/Output Leakage
ESD Protected
2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
•
Motor Control
•
•
Case: SOT23
Power Management Functions
Backlighting
Case Material: Molded Plastic, “Green” Molding
Compound. UL
Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯
Matte Tin annealed over Alloy 42
•
•
e3
Leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
S
G
ESD protected
Gate
Protection
Diode
Source
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMN33D8L-7
DMN33D8L-13
Compliance
Standard
Standard
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
088 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
̅
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
̅
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 5
June 2014
© Diodes Incorporated
DMN33D8L
Document number: DS36124
Rev. 2 – 2
DMN33D8L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
±20
V
GSS
Steady
State
250
200
T
A
= +25
°
C
mA
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 5V
I
D
I
D
T
A
= +70
°
C
Steady
State
200
150
T
A
= +25
°
C
T
A
= +70
°
C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
(Note 6)
0.5
0.8
A
A
I
S
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
θ
Value
350
Units
mW
Total Power Dissipation (Note5 )
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
357
°C/W
mW
JA
520
P
D
R
θ
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
240
°C/W
°C
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
⎯
⎯
V
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
1.0
±10
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
µA
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.0
2.5
V
V
GS(th)
⎯
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 100mA
V
GS
= 5V, I
D
= 10mA
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
⎯
⎯
3.0
3.8
Static Drain-Source On-Resistance
R
DS(ON)
⎯
Ω
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
80
ms
V
|Y
fs
|
V
SD
⎯
⎯
0.75
1.1
⎯
50
12
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
C
iss
C
oss
C
rss
Q
g
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
10
1.2
0.2
0.1
2.3
3.8
17.6
16.2
V
GS
= 10V, V
DS
= 10V,
Gate-Source Charge
Q
gs
Q
gd
t
D(on)
t
r
I
D
= 250mA
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 30V, I
D
= 0.2A, V
GEN
= 10V
,
R
GEN
= 25
Ω
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 5
June 2014
© Diodes Incorporated
DMN33D8L
Document number: DS36124
Rev. 2 – 2
DMN33D8L
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
V
= 5.0V
DS
V
= 10V
GS
0.8
V
= 4.5V
GS
V
= 3.5V
GS
0.6
0.4
0.2
0
V
= 2.5V
GS
T
= 150°C
A
T
= 85°C
A
T
= 125°C
V
= 2.0V
A
GS
T
= 25°C
A
T
= -55°C
V
= 1.8V
A
GS
0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 1 Typical Output Characteristics
0.60
0.50
0.40
0.30
0.20
0.10
0.00
V
= 4.5V
GS
T
= 150°C
A
T
= 125°C
A
V
= 2.5V
GS
T
= 85°C
A
V
= 4.0V
GS
V
V
= 4.5V
= 10V
GS
T
= 25°C
A
T
= -55°C
A
GS
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I
D
, DRAIN-SOURCE CURRENT (A)
0
0.2
0.4
0.6
0.8
1
I
D
, DRAIN CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance vs.
Drain Current and
T
e
mperature
2
0.5
0.4
0.3
0.2
0.1
0
1.5
1
V
I
= 4.5V
GS
= 250mA
D
V
= 4.5V
GS
I
= 250mA
D
0.5
0
-50 -25
T
J
, JUNCTION TEMPERATURE (
Figure 5 On-Resistance Variation with
T
emperature
0
25
50
75 100
125 150
-50 -25
T
J
, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with
T
emperature
0
25
50
75 100
125 150
°
C)
°
C)
3 of 5
June 2014
© Diodes Incorporated
DMN33D8L
Document number: DS36124
Rev. 2 – 2
DMN33D8L
2
1.8
1.6
1.4
1.2
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
= 1mA
D
I
= 250µA
D
T
= 150°C
A
0.8
0.6
0.4
0.2
0
T
= 125°C
T
= 25°C
A
A
T
= 85°C
T
= -55°C
A
A
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100
125 150
C)
T
J
, JUNCTION TEMPERATURE (
°
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 7 Gate Threshold Variation vs. Ambient
T
emperature
Figure 8 Diode Forward Voltage vs. Current
1000
10
8
f = 1MHz
100
6
C
iss
V
I
= 10V
DS
= 250mA
D
4
10
C
oss
C
rss
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
25
30
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Package Outline Dimensions
A
SOT23
Dim
A
B
C
D
F
G
H
J
K
K1
L
M
α
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
–
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
–
H
G
M
K
J
K1
–
D
F
0.45
0.085 0.18
0° 8°
0.61
L
All Dimensions in mm
4 of 5
June 2014
© Diodes Incorporated
DMN33D8L
Document number: DS36124
Rev. 2 – 2
DMN33D8L
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
5 of 5
June 2014
© Diodes Incorporated
DMN33D8L
Document number: DS36124
Rev. 2 – 2
