Diodes-Incorporated-DMN33D9LV-7
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DMN33D9LV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
I
D
max
BV
DSS
R
DS(ON)
max
T
A
= +25°C
3
Ω @ V
GS
= 4.5V
7
Ω @ V
GS
= 2.5V
30V
350mA
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: SOT563
Motor Control
Case Material: Molded Plastic, “Green” Molding Compound
. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.006 grams (Approximate)
Power Management Functions
DC-DC Converters
Backlighting
SOT563
ESD Protected
Top View
Top View
Internal Schematic
Pin Out
Ordering Information
(Note 4)
Part Number
DMN33D9LV-7
DMN33D9LV-7A
DMN33D9LV-13
DMN33D9LV-13A
Marking
34B
34B
34B
34B
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
3,000
7
7
13
13
8
8
8
8
3,000
10,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s
definitions of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
DMN33D9LV-7A/-13A (Note 5)
DMN33D9LV-7/-13
5
4
6
G
2
S
2
D
1
S
2
D
1
G
2
34B = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: G = 2019)
34B
YM
34B YM
M = Month (ex: 9 = September)
D
2
S
1
G
1
S
1
G
1
D
2
3
1
2
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
Code
G
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Note:
5. Part number with suffix 7A and 13A designates devices marked with a Pin 1 indicator. There is no other difference between both devices.
1 of 6
October 2019
© Diodes Incorporated
DMN33D9LV
Document number: DS41900
Rev. 3 – 2
DMN33D9LV
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
T
= +25°C
= +70°C
350
200
A
A
mA
Continuous Drain Current (Note 6) V
GS
= 4.5V
I
D
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
0.5
0.8
A
A
I
S
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.43
Unit
T
A
= +25°C
Total Power Dissipation (Note 6)
T
A
= +70°C
W
P
D
0.20
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
288
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
μ
A
μ
A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T
C
= +25°C
V
DS
= 30V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
±10
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.8
—
—
—
—
—
—
1.4
2.4
3.0
5.0
7.0
1.2
V
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= 3V, I
D
= 100
μA
V
GS
= 10V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 4.0V, I
D
= 10mA
V
GS
= 2.5V, I
D
= 10mA
V
GS
= 0V, I
S
= 115mA
0.2
0.3
0.3
0.7
0.8
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
48
11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= 5V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
8
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
0.55
1.23
0.14
0.14
2.9
Q
g
V
GS
= 10V, V
DS
= 10V,
I
D
= 250mA
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
2.6
ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 25
Ω
, I
D
= 200mA
Turn-Off Delay Time
18.2
13.6
ns
t
D(OFF)
t
F
Turn-Off Fall Time
ns
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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October 2019
© Diodes Incorporated
DMN33D9LV
Document number: DS41900
Rev. 3 – 2
DMN33D9LV
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 10V
GS
V
= 5.0V
DS
V
= 3.0V
GS
V
= 4.0V
GS
V
= 4.5V
GS
V
V
= 2.5V
GS
T
= 150°C
= 2.0V
A
T
= 85°C
GS
A
V
= 1.8V
GS
V
= 1.6V
GS
T
= 125°C
T
= 25°C
A
A
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 2.5V
GS
V
= 4.5V
GS
1.8
1.6
1.4
1.2
1
T
= 150°C
= 85°C
A
T
= 125°C
A
T
A
T
= 25°C
A
T
= -55°C
A
0.8
0.6
0.4
0.2
0
V
= 4.5V
V
= 10V
GS
GS
V
= 4.0V
GS
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
I
D
, DRAIN CURRENT (A)
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.5
0.4
0.3
0.2
V
= 4.5V
GS
= 300mA
I
D
V
= 10V
GS
= 500mA
I
D
V
= 10V
GS
V
= 4.5V
GS
I
= 500mA
D
I
= 300mA
D
0.1
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 6 On-Resistance Variation with
T
e
mperature
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 5 On-Resistance Variation with
T
e
mperature
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October 2019
© Diodes Incorporated
DMN33D9LV
Document number: DS41900
Rev. 3 – 2
DMN33D9LV
2
1.8
1.6
1.4
1.2
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
= 1mA
D
I
= 250µA
D
T
= 150°C
A
0.8
0.6
0.4
0.2
0
T
= 125°C
A
T
= 25°C
A
T =
85°C
A
T
= -55°C
A
-50 -25
0
25
50
75 100
125 150
0
0.3
0.6
0.9
1.2
1.5
V
S
D
, SOURCE-DRAIN VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Junction Temperature
Figure 8 Diode Forward Voltage vs. Current
100
10
8
f = 1MHz
C
iss
6
V
I
= 10V
DS
= 250mA
10
C
oss
D
4
C
rss
2
1
0
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Q
g
, TO
T
A
L GATE CHARGE (nC)
Figure 10 Gate Charge
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
R
θ
JA
(t) = r(t) * R
θ
JA
D = 0.005
R
= 289
℃
/W
θ
JA
Duty Cycle, D = t1 / t2
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
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October 2019
© Diodes Incorporated
DMN33D9LV
Document number: DS41900
Rev. 3 – 2
DMN33D9LV
Package Outline Dimensions
SOT563
b
a
a
SOT563
Dim Min
Max Typ
A
b
c
D
E
E1
e
e1
L
a
0.55 0.60 0.60
0.15 0.30 0.20
0.10 0.18 0.11
1.50 1.70 1.60
1.55 1.70 1.60
1.10 1.25 1.20
E
E1
L
c
R.01
—
—
0.50
e
0.90 1.10 1.00
0.10 0.30 0.20
e1
D
8
°
9
°
7
°
All Dimensions in mm
A
Suggested Pad Layout
SOT563
C
X
Dimensions Value
(in mm)
Y
C
C1
G
0.500
1.270
0.600
0.300
1.300
0.670
1.940
X
Y1
G
C1
X1
Y
Y1
X1
5 of 6
October 2019
© Diodes Incorporated
DMN33D9LV
Document number: DS41900
Rev. 3 – 2
DMN33D9LV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
6 of 6
October 2019
© Diodes Incorporated
DMN33D9LV
Document number: DS41900
Rev. 3 – 2
