Diodes-Incorporated-DMN3731U-7
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DMN3731U
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low V
GS(TH),
can be Driven Directly from a Battery
Low R
DS(ON)
I
D
Max
BV
DSS
Max R
DS(ON)
T
A
= +25°C
ESD Protected Gate
0.9A
460m
Ω
@ V
GS
= 4.5V
560m
Ω
@ V
GS
= 2.5V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
30V
0.83A
Mechanical Data
Description and Applications
Case: SOT23
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, which makes it
ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.
Load Switch
Portable Applications
Power Management Functions
e3
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
SOT23
D
S
G
Top View
Equivalent Circuit
Top View
Pin-Out
Ordering Information
(Note 4)
Marking
Reel size (inches)
Part Number
DMN3731U-7
DMN3731U-13
Quantity per Reel
3,000
BR3
BR3
7
13
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as t
hose which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
BR3 = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y =Year (ex: G = 2019)
M = Month (ex: 9 = September)
Date Code Key
Year
2018
2019
2020
2021
2022
2023
2024
Code
F
G
H
I
J
K
L
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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January 2019
© Diodes Incorporated
DMN3731U
Datasheet number: DS40980 Rev. 3 – 2
DMN3731U
Maximum Ratings
(@T
A
= 25°C unless otherwise specified)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±8
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
0.9
0.7
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
I
D
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
0.55
3
A
A
I
S
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
0.4
303
Unit
W
P
D
R
θJA
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
0.58
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
215
°C/W
°C
R
θJA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= 25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
30
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10
μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
µA
µA
3
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
—
0.45
—
0.95
460
560
730
1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 100mA
V
GS
= 1.8V, I
D
= 75mA
V
GS
= 0V, I
S
= 300mA
271
288
324
0.7
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
73
7.2
5
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
902
5.5
0.8
1.4
2.5
3.1
477
123
59
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
ns
nC
Q
g
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
Turn-On Rise Time
V
DS
= 10V, I
D
= 1A
V
GS
= 10V, R
g
= 6
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= 1A, di/dt = 1
00A/μs
25
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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January 2019
© Diodes Incorporated
DMN3731U
Datasheet number: DS40980 Rev. 3 – 2
DMN3731U
1.0
0.8
0.6
1
V
= 5V
DS
T
= 150°C
V
= 1
.
5
V
A
GS
V
= 2
.
0
V
= 3
.
0
V
GS
T
T
= 125°C
= 85°C
A
0.8
V
GS
T
A
V
= 4
.
0
V
GS
V
= 1
.
4
V
GS
V
= 8
.
0
V
0.6
0.4
GS
= 25°C
A
T
= -55°C
A
0.4
0.2
0.0
V
= 1
.
3
V
= 1
.
2
V
GS
0.2
0
V
GS
0
0.5
1
1.5
2
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
0.4
2
1.6
I
= 200mA
D
0.35
0.3
V
= 1
.
8
V
= 2
.
5
V
GS
V
1.2
0.8
GS
I
= 100mA
D
I
= 75mA
V
= 4
.
5
V
D
GS
0.25
0.2
0.4
0
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.7
0.6
2
V
= 4
.
5
V
GS
V
= 4
.
5
V
GS
= 200mA
I
D
1.8
1.6
1.4
1.2
1
V
I
= 2
.
5
V
GS
= 100mA
0.5
0.4
0.3
0.2
T
T
= 150°C
= 125°C
A
A
D
T
T
= 85°C
A
A
V
= 1
.
8
V
GS
I
= 75mA
D
= 25°C
T
= -55°C
A
0.1
0
0.8
0.6
0
0.2
0.4
0.6
0.8
1
–
5
0
–
2
5
0
25
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
50
75 100 125
150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
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January 2019
© Diodes Incorporated
DMN3731U
Datasheet number: DS40980 Rev. 3 – 2
DMN3731U
0.6
0.5
0.4
1.5
1.2
I
= 1mA
D
V
I
= 4
.
5
V
GS
= 200mA
V
I
= 1
.
8
V
D
GS
= 75mA
0.9
0.6
0.3
0.2
D
V
= 2
.
5
V
GS
= 100mA
I
= 250µA
D
I
D
0.1
0
0.3
0
–
5
0
–
2
5
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100 125
150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE
(
℃
)
Figure 8 Gate Threshold Variation vs. Junction Temperature
1
1000
T
= -55°C
A
0.8
0.6
0.4
T
= 25°C
A
100
C
T
= 85°C
iss
A
T
= 125°C
A
10
C
C
o
s
s
T
= 150°C
A
0.2
0
r
s
s
f=
1
MHz
1
0
5
10
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
8
6
10
R
D
S
(
on)
Limi
t
e
d
V
I
= 15V
DS
= 1A
D
P
= 100µs
W
1
P
= DC
W
P
= 10s
W
0.1
4
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.01
2
0
T
= 150°C
J
(
m
a
x
)
T
V
= 25°C
GS
C
= 4
.
5
V
Single Pulse
DUT on 1*MRP Board
0.001
0.1
1
10
100
0
2
4
6
8
10
12
V
DS
DRAIN-SOURCE VOL
T
AGE
(
V)
Figure # SOA, Safe Operation Area
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
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January 2019
© Diodes Incorporated
DMN3731U
Datasheet number: DS40980 Rev. 3 – 2
DMN3731U
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
D = 0
.
0
05
0.01
R
R
(t) = r(t) * R
Ɵ
J
A
Ɵ
J
A
D = Single Pulse
= 143°C
/
W
Ɵ
J
A
Du
t
y
C
ycle, D = t1/ t2
0.001
1E
–
0
6 0.00001
0.0001 0.001
0.01
0.1
1
10
100
1000 10000
100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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January 2019
© Diodes Incorporated
DMN3731U
Datasheet number: DS40980 Rev. 3 – 2
DMN3731U
Package Outline Dimensions
SOT23
All 7°
H
SOT23
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
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January 2019
© Diodes Incorporated
DMN3731U
Datasheet number: DS40980 Rev. 3 – 2
DMN3731U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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January 2019
© Diodes Incorporated
DMN3731U
Datasheet number: DS40980 Rev. 3 – 2
