Diodes-Incorporated-DMN4020LFDE-13
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DMN4020LFDE
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm
2
I
D
max
BV
DSS
R
DS(ON)
max
Low Gate Threshold Voltage
T
A
= +25°C
Low On-Resistance
20m
Ω
@ V
GS
= 10V
28
mΩ @ V
GS
= 4.5V
8.0A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please refer to the related automotive grade (Q-suffix) part.
A listing can be found at
40V
6.7A
•
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
Description and Applications
Mechanical Data
•
•
Case: U-DFN2020-6 (Type E)
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
•
•
General Purpose Interfacing Switch
Power Management Functions
e4
per MIL-STD-202, Method 208
•
Weight: 0.0065 grams (Approximate)
D
U-DFN2020-6 (Type E)
G
S
Pin Out
Equivalent Circuit
Bottom View
Ordering Information
(Note 4)
Part Number
DMN4020LFDE-7
DMN4020LFDE-13
Marking
NE
NE
Reel Size (inches)
Quantity Per Reel
3000
7
13
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/
.
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March 2020
© Diodes Incorporated
DMN4020LFDE
D
atasheet number: DS35819
Rev. 5 – 2
DMN4020LFDE
Marking Information
Site 1:
NE = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
NE
M = Month (ex: 9 = September)
Date Code Key
Year
2013
…
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
Code
A
…
G
H
I
J
K
L
M
N
O
P
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2:
NE = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: H = 2020)
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal code (ex: U = Monday)
Date Code Key
Year
2020
0
2021
1
2022
2
2023
3
2024
4
2025
5
2026
6
2027
7
2028
8
Code
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
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March 2020
© Diodes Incorporated
DMN4020LFDE
D
atasheet number: DS35819
Rev. 5 – 2
DMN4020LFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
8.0
6.3
A
A
A
A
I
D
I
D
I
D
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 4.5V
9.5
7.5
t < 10s
Steady
State
6.7
5.3
8.0
6.4
t < 10s
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current
32
A
A
I
DM
I
S
2.5
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
0.66
Unit
T
A
= +25°C
Total Power Dissipation (Note 5)
W
0.42
189
132
2.03
T
A
= +70°C
Steady State
t < 10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
θ
JA
T
A
= +25°C
P
D
1.31
61
43
T
A
= +70°C
Steady State
t < 10s
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
9.3
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
40
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.4
—
—
15
20
0.7
2.4
20
28
1
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 8A
V
GS
= 4.5V, I
D
= 4A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1060
84
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
58
1.6
V
DS
= 0V, V
GS
= 0V, f = 1MHz
8.8
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
19.1
3.0
Q
g
V
DS
= 20V, I
D
= 8A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
2.5
Turn-On Delay Time
5.3
Turn-On Rise Time
7.1
V
DS
= 20V, R
L
= 2.5
Ω
V
GS
= 10V, R
G
= 3
Ω
Turn-Off Delay Time
15.1
4.8
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
10.5
4.15
t
RR
I
F
= 8A, di/dt = 10
0A/μs
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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March 2020
© Diodes Incorporated
DMN4020LFDE
D
atasheet number: DS35819
Rev. 5 – 2
DMN4020LFDE
20.0
18.0
16.0
14.0
12.0
10.0
8.0
20
16
12
8
V
DS
= 5.0V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
T
= 150°C
A
T
= 125°C
A
6.0
T
= 85°C
A
4
4.0
T
= 25°C
V
GS
= 3.0V
A
T
= -55°C
2.0
A
V
GS
= 2.8V
0
0.0
0
0.5
1
1.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 1 Typical Output Characteristic
0.024
0.022
0.02
0.2
0.18
0.16
0.14
0.12
0.1
0.018
0.016
0.014
0.012
0.01
V
= 4.5V
GS
0.08
0.06
0.04
0.02
0
V
= 10V
GS
I
= 8A
D
I
= 4A
D
0.008
0
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOL
T
A
GE (V)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Transfer Characteristics
2
0.04
0.035
0.03
V
= 4.5V
GS
1.8
1.6
1.4
1.2
1
T
= 150°C
= 125°C
V
= 10V
A
GS
= 10A
I
D
T
A
T
= 85°C
A
V
= 4.5V
= 5A
GS
0.025
0.02
I
D
T
= 25°C
A
0.015
0.01
T
= -55°C
A
0.8
0.6
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25
50
75 100
125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPER
A
T
URE (
°
C)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
Figure 6 On-Resistance Variation with
T
e
mperature
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March 2020
© Diodes Incorporated
DMN4020LFDE
D
atasheet number: DS35819
Rev. 5 – 2
DMN4020LFDE
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
3
2.8
2.6
2.4
2.2
2
V
= 4.5V
= 5A
GS
I
D
I
D
= 1mA
V
= 10V
= 8A
GS
1.8
1.6
1.4
1.2
1
I
D
= 250
μ
A
I
D
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
°
C)
Figure 7 On-Resistance Variation with
T
e
mperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8 Gate Threshold Variation vs Temperature
20
18
16
14
12
10
8
T
= 150°C
A
T
= 125°C
A
T
= 85°C
= 25°C
A
6
T
A
4
T
= -55°C
A
2
0
0
0.3
0.6
0.9
1.2
1.5
V
S
D
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
θ
J
A
R
θ
JA
= 177
℃
/W
D = Single Pulse
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 10 Transient Thermal Resistance
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March 2020
© Diodes Incorporated
DMN4020LFDE
D
atasheet number: DS35819
Rev. 5 – 2
DMN4020LFDE
Package Outline Dimensions
U-DFN2020-6 (Type E)
U-DFN2020-6
Type E
Dim Min Max
A3
Typ
0.60
0.03
0.15
0.30
A1
A
A
A1
A3
b
0.57 0.63
0
0.05
−
−
D
0.25 0.35
b1
0.185 0.285
0.235
D
D2
E
E2
e
1.95 2.05
0.85 1.05
1.95 2.05
1.40 1.60
2.00
0.95
2.00
1.50
0.65
0.30
0.87
0.305
0.225
0.20
b1
K1
D2
E
E2
L1
−
−
L( 2X)
L
0.25 0.35
0.82 0.92
K2
L1
K1
K2
Z
−
−
−
−
−
−
Z( 4X)
e
b( 6X)
All Dimensions in mm
Suggested Pad Layout
U-DFN2020-6 (Type E)
Value
Dimensions
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
C
X
X1
X2
Y
Y1
Y2
Y3
X2
Y1
Y3 Y2
X1
Y (
2x)
X( 6x)
C
6 of 7
March 2020
© Diodes Incorporated
DMN4020LFDE
D
atasheet number: DS35819
Rev. 5 – 2
DMN4020LFDE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
March 2020
© Diodes Incorporated
DMN4020LFDE
D
atasheet number: DS35819
Rev. 5 – 2
