Diodes-Incorporated-DMN4035L-13
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DMN4035L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
BV
DSS
R
DS(ON)
max
I
D
max
42
mΩ @ V
GS
= 10V
52
mΩ @ V
GS
= 4.5V
4.6A
4.1A
40V
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
An Automotive-Compliant Part is Available Under Separate
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
SOT23
D
D
G
S
G
S
Top View
Pin-Out
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMN4035L-7
DMN4035L-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-free/ fo
r more information abou
t Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) a
nd
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
35L = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
35L
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
2027
Code
G
H
I
J
K
L
M
N
O
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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December 2019
© Diodes Incorporated
DMN4035L
Document number: DS39826
Rev. 3 – 2
DMN4035L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
4.6
3.7
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
1.5
25
25
A
A
A
I
S
I
DM
I
SM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
Value
0.72
171
1.4
Unit
W
P
D
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
Steady State
Steady State
°C/W
W
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
93
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
40
—
—
V
BV
DSS
I
DSS
—
—
—
—
1
V
GS
= 0V, I
D
= 250μA
V
DS
= 40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
—
30
40
0.7
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 4.3A
V
GS
= 4.5V, I
D
= 3.9A
V
GS
= 0V, I
S
= 1.25A
42
52
1.1
—
—
—
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
574
87.8
38.7
1.6
5.9
12.5
1.7
2.2
3.1
2.6
15
C
iss
C
oss
C
rss
R
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DS
= 20V, I
D
= 3.9A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 20V, V
GS
= 10V,
Turn-Off Delay Time
R
L
= 20
Ω
, R
G
= 6
Ω
t
D(OFF)
t
F
Turn-Off Fall Time
5.5
6.5
1.2
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 3.9A, di/dt = 500A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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December 2019
© Diodes Incorporated
DMN4035L
Document number: DS39826
Rev. 3 – 2
DMN4035L
20.0
18.0
16.0
14.0
12.0
10.0
8.0
20
18
16
14
12
10
8
V
DS
= 5V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 6.0V
V
GS
= 10V
V
GS
= 3.5V
V
GS
= 3.0V
6
6.0
85
℃
25
℃
-55
℃
150
℃
4
4.0
V
GS
= 2.8V
V
GS
= 2.5V
125
℃
2
2.0
0
0.0
0
1
2
3
4
5
6
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
= 3.9A
V
GS
= 4.5V
V
GS
= 10V
I
D
= 4.3A
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2
1.8
1.6
1.4
1.2
1
V
GS
= 10V
V
GS
= 10V, I
D
= 4.3A
150
℃
125
℃
85
℃
V
GS
= 4.5V, I
D
= 3.9A
0.8
0.6
0.4
0.2
0
25
℃
-55
℃
0
2
4
6
8
10 12 14 16 18 20
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
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December 2019
© Diodes Incorporated
DMN4035L
Document number: DS39826
Rev. 3 – 2
DMN4035L
2.5
2
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= 4.5V, I
D
= 3.9A
I
D
= 1mA
1.5
1
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 4.3A
0.5
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
20
18
16
14
12
10
8
1000
100
10
V
GS
= 0V
C
iss
C
oss
6
C
rss
T
A
= 85
℃
T
A
= 25
℃
T
A
= 150
℃
T
A
= 125
℃
4
2
T
A
= -55
℃
0
0
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
10
9
8
7
6
5
4
3
2
1
0
100
10
R
DS(ON)
Limited
P
W
= 1ms
P
W
= 10ms
P
W
= 100µs
P
W
= 100ms
1
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP
Board
0.1
0.01
V
DS
= 20V, I
D
= 3.9A
P
W
= 1s
P
W
= 10s
DC
10
V
GS
= 10V
0
2
4
6
8
10
12
0.1
1
100
Q
g
(nC)
Figure 11. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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December 2019
© Diodes Incorporated
DMN4035L
Document number: DS39826
Rev. 3 – 2
DMN4035L
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 167
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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December 2019
© Diodes Incorporated
DMN4035L
Document number: DS39826
Rev. 3 – 2
DMN4035L
Package Outline Dimensions
SOT23
All 7°
H
SOT23
Min Max
Dim
A
B
C
D
F
G
H
Typ
0.40
1.30
2.40
GAUGE PLANE
0.25
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.51
1.40
2.50
1.03 0.915
0.60 0.535
J
K
K1
a
M
A
2.05
3.00
1.83
2.90
0.05
L
L1
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
C
X
X1
Y
2.0
0.8
1.35
0.9
Y1
C
Y1
2.9
X
X1
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December 2019
© Diodes Incorporated
DMN4035L
Document number: DS39826
Rev. 3 – 2
DMN4035L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
December 2019
© Diodes Incorporated
DMN4035L
Document number: DS39826
Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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