Diodes-Incorporated-DMN4800LSSL-13
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DMN4800LSSL
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefitss
•
14m
Ω
@ V
GS
= 10V
I
D
max
•
•
•
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
V
(BR)DSS
R
DS(on)
T
A
= +25°C
8.0A
14m
Ω
@ V
GS
= 10V
20m
Ω
@ V
GS
= 4.5V
30V
•
•
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
6.7A
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
•
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Applications
•
•
DC-DC Converters
Power management functions
•
Weight: 0.072 grams (approximate)
D
S
S
S
G
D
SO-8
D
G
D
D
S
Top View
Equivalent circuit
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN4800LSSL-13
SO-8
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
8
5
8
5
= Manufacturer’s Marking
N4800LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
N4800LS
YY WW
N4800LS
YY
WW
WW = Week (01 – 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
1 of 6
November 2013
© Diodes Incorporated
DMN4800LSSL
Document number: DS35016 Rev. 4 – 2
DMN4800LSSL
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
V
GSS
±
20
T
A
= +25°C
T
A
= +70°C
Drain Current (Note 5)
V
GS
= 10V
Drain Current
(Note 5)
V
GS
= 10V
Pulsed Drain Current (Note 6)
Steady
State
8.0
6.4
A
I
D
T
A
= +25°C
Steady
State
6.7
5.3
A
A
I
D
T
A
= +70°C
50
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
1.46
Unit
W
P
D
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
86
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
⎯
⎯
V
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
1
V
GS
= 0V, I
D
= 250
μ
A
μ
A
nA
V
DS
= 30V, V
GS
= 0V
I
GSS
±
100
V
GS
=
±
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.8
1.2
1.6
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 8A
V
GS
= 4.5V, I
D
= 7A
V
DS
= 10V, I
D
= 8A
V
GS
= 0V, I
S
= 1A
11
14
14
20
Static Drain-Source On-Resistance
m
Ω
R
DS (ON)
⎯
Forward Transconductance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
8
S
V
g
fs
⎯
⎯
⎯
0.94
0.72
V
SD
798
128
122
1.37
8.7
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
G
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= 5V, V
DS
= 15V, I
D
= 9A
Total Gate Charge
Q
g
Gate-Source Charge
Gate-Drain Charge
1.7
nC
Q
gs
Q
gd
t
d(on)
t
r
2.4
Turn-On Delay Time
Rise Time
5.03
4.50
26.33
8.55
V
DD
= 15V, V
GEN
= 10V,
R
L
= 15
Ω
,
R
G
= 6.0
Ω
,
I
D
= 1A
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
2 of 6
November 2013
© Diodes Incorporated
DMN4800LSSL
Document number: DS35016 Rev. 4 – 2
DMN4800LSSL
30
25
30
25
V
= 10V
GS
V
= 5V
V
= 4.5V
DS
GS
20
20
15
V
= 3.0V
GS
15
10
10
5
T
= 150°C
V
= 2.5V
A
GS
T
= 125°C
T
= 85°C
A
A
5
0
T
= 25°C
A
T
= -55°C
A
V
= 2.0V
GS
0
0
0.5
1
1.5
2
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Typical Transfer Characteristic
0.03
0.02
0.08
0.07
V
= 4.5V
GS
T
= 150°C
A
0.06
0.05
T
= 125°C
= 85°C
A
T
A
0.04
0.03
0.02
T
= 25°C
A
0.01
T
= -55°C
A
V
= 4.
5
V
GS
0.01
0
0
0
5
10
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and
T
e
mperature
15
20
25
30
0
5
10
15
20
25
30
I
D
, DRAI
N
–
S
OURCE CURRENT (A)
F
i
g. 3
T
y
pical On-Resistance
vs. Drain Current and Gate Voltage
1.8
0.03
1.6
1.4
1.2
1.0
0.025
0.02
V
= 4.5V
GS
I
= 10A
D
0.015
0.01
V
= 4.5V
V
= 10V
GS
GS
I
= 10A
I
= 11.6A
D
D
0.8
0.6
0.005
0
V
= 10V
GS
I
= 11.6A
D
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with
T
e
mperature
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with
T
e
mperature
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November 2013
© Diodes Incorporated
DMN4800LSSL
Document number: DS35016 Rev. 4 – 2
DMN4800LSSL
1.6
1.2
20
16
T
= 25°C
A
I
= 1mA
D
I
= 250µA
12
8
D
0.8
0.4
0
4
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-50 -25
0
25
50
75 100
125 150
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
10,000
10
8
1,000
C
iss
I
= 11.6A
6
4
2
0
D
I
= 9A
D
C
oss
100
10
C
rss
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14 16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Fig. 10
T
o
tal Gate Charge
Fig. 9 Typical
T
o
tal Capacitance
10,000
1,000
T
T
= 150°C
= 125°C
A
A
100
T
= 85°C
A
10
1
T
= 25°C
A
T
= -55°C
A
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
4 of 6
November 2013
© Diodes Incorporated
DMN4800LSSL
Document number: DS35016 Rev. 4 – 2
DMN4800LSSL
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
θ
JA
θ
R
JA
D = 0.02
D = 0.01
D = 0.005
= 85°C/W
θ
JA
0.01
P(pk)
t
1
t
2
T
– T
= P * R
(t)
J
A
θ
JA
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 12 Transient Thermal Response
Package Outline Dimensions
SO-8
Min
–
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
h
L
θ
4.85
5.90
3.85
1.27 Typ
–
0.62
0
°
4.95
6.10
3.95
Detail ‘A’
7
°~
9
°
h
°
45
0.35
0.82
8
°
Detail ‘A’
A2
A3
A
b
All Dimensions in mm
e
D
Suggested Pad Layout
X
Dimensions Value
(in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
5 of 6
November 2013
© Diodes Incorporated
DMN4800LSSL
Document number: DS35016 Rev. 4 – 2
DMN4800LSSL
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
6 of 6
November 2013
© Diodes Incorporated
DMN4800LSSL
Document number: DS35016 Rev. 4 – 2
