Diodes-Incorporated-DMN53D0U-13
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DMN53D0U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
•
•
N-Channel MOSFET
I
D
V
(BR)DSS
R
DS(ON)
Low On-Resistance
T
A
= +25°C
300 mA
200 mA
2
Ω
@ V
GS
= 5V
Very Low Gate Threshold Voltage
Low Input Capacitance
50V
2.5
Ω
@ V
GS
= 2.5V
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
•
•
Case: SOT23
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL
Flammability Classification Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
•
•
Weight: 0.008 grams (approximate)
SOT23
D
ESD protected
S
G
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN53D0U-7
DMN53D0U-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
53D = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or
= Year (ex: B = 2014)
Y
M = Month (ex: 9 = September)
Shanghai A/T Site
Chengdu A/T Site
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
May 2014
© Diodes Incorporated
DMN53D0U
Document number: DS37098
Rev. 2 – 2
DMN53D0U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
Value
50
Unit
V
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Continuous
V
V
GSS
±
12
Continuous
Pulsed
I
D
I
DM
300
500
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
R
θ
Value
520
Unit
mW
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
246
°
C/W
°
C
JA
-55 to +150
T
J
, T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
50
⎯
⎯
V
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
1
V
GS
= 0V, I
D
= 250µA
V
DS
= 50V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
µA
µA
Gate-Body Leakage
±10
I
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.4
1.0
V
Ω
V
V
GS(th)
R
DS(ON)
V
SD
⎯
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 1.8V, I
D
= 50mA
⎯
⎯
⎯
⎯
⎯
⎯
2.0
2.5
3.0
Static Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
1.4
⎯
⎯
V
GS
= 0V, I
S
=115mA
C
iss
C
oss
C
rss
Q
g
37.1
8.4
4.0
0.6
0.1
0.1
2.1
2.8
21
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
R
G
= 25
ꢀ
, I
D
= 200mA
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
14
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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May 2014
© Diodes Incorporated
DMN53D0U
Document number: DS37098
Rev. 2 – 2
DMN53D0U
2.0
1.5
1.0
0.5
0.0
1.5
1.2
0.9
V
= 10V
V
= 5.0V
GS
DS
V
= 3.0V
GS
V
= 3.5V
GS
V
= 4.0V
GS
V
= 2.5V
GS
0.6
0.3
0
T
= 150°C
A
V
= 2.0V
GS
T
= 85°C
A
T
A
= 125°C
V
= 1.8V
GS
T
= 25°C
A
V
= 1.5V
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 1 Typical Output Characteristics
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2.5
2
8
7
6
5
4
3
2
1
0
V
= 1.8V
GS
1.5
V
= 2.5V
V
I
= 50mA
D
GS
1
= 5V
GS
0.5
0
0
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
0.01
0.1
1
10
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
3
2.5
2
2.4
2.2
2
V
= 4.5V
GS
V
= 5V
GS
T
= 150°C
A
1.8
1.6
1.4
1.2
1
I
= 500mA
D
T
= 125°C
A
1.5
1
V
I
= 2.5V
GS
T
T
= 85°C
= 25°C
A
= 100mA
D
0.8
0.6
0.4
0.2
0
A
T
= -55°C
A
0.5
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 6 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
I
D
, DRAIN CURRENT (A)
°
C)
Figure 5 Typical On-Resistance vs.
Drain Current and
T
e
mperature
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May 2014
© Diodes Incorporated
DMN53D0U
Document number: DS37098
Rev. 2 – 2
DMN53D0U
2
1.8
1.6
1.4
1.2
1
1.8
1.5
1.2
0.9
0.6
0.3
0
V
= 2.5V
GS
I
= 100mA
D
I
= 1mA
D
I
= 250µA
V
= 5V
D
GS
0.8
0.6
0.4
0.2
0
I
= 500mA
D
-50 -25
0
25
50
75 100
125 150
C)
-50 -25
0
25
50
75 100
125 150
C)
Figure 7 On-Resistance Variation with
T
e
mperature
T
J
, JUNCTION TEMPERATURE (
°
T
J
, JUNCTION TEMPER
A
T
URE (
°
Figure 8 Gate Threshold Variation vs. Ambient
T
emperature
1
0.8
0.6
0.4
0.2
0
f = 1MHz
C
iss
T
= 150°C
= 125°C
A
T
A
= 25°C
C
A
oss
T
A
T
= 85°C
A
T
= -55°C
C
rss
0
0.3
0.6
0.9
1.2
1.5
0
5
10
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 10 Typical Junction Capacitance
15
20
25
30
35
40
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
6
V
I
= 10V
DS
= 250mA
D
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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May 2014
© Diodes Incorporated
DMN53D0U
Document number: DS37098
Rev. 2 – 2
DMN53D0U
Package Outline Dimensions
A
ll
7
°
H
SOT23
Min Max
G
A
U
G
E P
L
A
N
E
0.
2
5
Dim
A
B
C
D
F
G
H
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.51
1.40
2.50
1.03 0.915
0.60 0.535
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
α
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
G
F
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
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May 2014
© Diodes Incorporated
DMN53D0U
Document number: DS37098
Rev. 2 – 2
DMN53D0U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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May 2014
© Diodes Incorporated
DMN53D0U
Document number: DS37098
Rev. 2 – 2
