Diodes-Incorporated-DMN5L06K-7
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DMN5L06K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
I
D
V
(BR)DSS
R
DS(ON)
T
A
= +25°C
300 mA
200 mA
2.0
Ω
@ V
GS
= 5.0V
2.5
Ω
@ V
GS
= 2.5V
50V
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description and Applications
Mechanical Data
This new generation 50V N-Channel Enhancement Mode MOSFET
has been designed to minimize RDS(on) and yet maintain superior
switching performance. This device is ideal for use in Notebook
battery power management and Load switch.
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Load switches
Level switches
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
Gate
Protection
Diode
Source
S
G
Top View
Top View
Equivalent Circuit
ESD PROTECTED TO 2kV
Ordering Information
(Note 4)
Part Number
DMN5L06K-7
DMN5L06KQ-7
Qualification
Commercial
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Marking Information
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
DAB
M = Month (ex: 9 = September)
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN5L06K
Document number: DS30929 Rev. 8 – 2
DMN5L06K
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Symbol
V
DSS
Value
50
Unit
V
Gate-Source Voltage
Drain Current (Note 5)
V
V
GSS
20
300
800
Continuous
Pulsed (Note 6)
mA
I
D
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
350
Unit
mW
C/W
C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
357
R
θ
JA
-65 to +150
T
J
, T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
50
V
BV
DSS
I
DSS
60
V
GS
= 0V, I
D
= 10
μ
A
V
DS
= 50V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
nA
@ T
C
= +25°C
1
500
50
μ
A
nA
nA
Gate-Body Leakage
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.49
1.0
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
3.0
2.5
2.0
Static Drain-Source On-Resistance
Ω
R
DS(ON)
V
GS
= 5.0V, I
D
= 50mA
On-State Drain Current
0.5
200
0.5
1.4
A
mS
V
I
D(ON)
|Y
fs
|
1.4
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
V
SD
50
25
pF
pF
pF
C
iss
C
oss
C
rss
V
DS
= 25V, V
GS
= 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
5.0
Notes:
5. Device mounted on FR-4 PCB
6. Pulse width
10mS, Duty Cycle
1%.
7. Short duration pulse test used to minimize self-heating effect.
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© Diodes Incorporated
DMN5L06K
Document number: DS30929 Rev. 8 – 2
DMN5L06K
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Typical Transfer Characteristics
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1
Typical Output Characteristics
10
1
0
0
75
T
ch
, CHANNEL TEMPERATURE (°C)
Fig. 3
Gate Threshold Voltage vs. Channel
T
emperature
100
-25
25
150
125
-50
50
0
I
D
,
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
1
V
GS,
G
A
T
E SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Fig. 5
Static Drain-Source On-Resistance vs. Drain Current
Fig. 6
Static Drain-Source On-Resistance
vs. Gate-Source Voltage
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© Diodes Incorporated
DMN5L06K
Document number: DS30929 Rev. 8 – 2
DMN5L06K
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Ambient
T
emperature
1
I
D
, DRAIN CURRENT (A)
Fig.10 Forward
Transfer Admittance vs. Drain Current
60
400
350
50
40
30
20
10
0
300
250
200
150
100
C
iss
C
C
oss
rss
50
0
f = 1MHz
100
T
A
, AMBIENT TEMPERATURE (
Fig. 11
Derating Curve –
T
o
tal
150
50
0
5
10
15
20
25
30
0
°
C)
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 12 Typical Junction Capacitance
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© Diodes Incorporated
DMN5L06K
Document number: DS30929 Rev. 8 – 2
DMN5L06K
Package Outline Dimensions
A
SOT23
Dim
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
A
B
C
D
F
G
H
J
K
K1
L
M
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
–
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
–
H
G
M
K
J
K1
–
D
F
0.45
0.085 0.18
0° 8°
0.61
L
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
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March 2014
© Diodes Incorporated
DMN5L06K
Document number: DS30929 Rev. 8 – 2
DMN5L06K
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMN5L06K
Document number: DS30929 Rev. 8 – 2
