Diodes-Incorporated-DMN5L06TK-7
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Green
DMN5L06TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
ESD Protected Up To 2kV
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
•
•
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
•
•
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
e3
•
•
Drain
SOT523
D
Gate
S
G
Gate
Protection
Diode
Source
ESD PROTECTED, 2kV
TOP VIEW
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN5L06TK-7
SOT523
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. S
ee http://www.diodes.com for mor
e information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green” and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
DAB
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
Code
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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July 2012
© Diodes Incorporated
DMN5L06TK
Document number: DS30926 Rev. 5 – 2
DMN5L06TK
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Symbol
V
DSS
V
GSS
I
D
Value
50
Units
V
Gate-Source Voltage
V
±
20
280
Drain Current (Note 5)
Continuous
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
150
Units
mW
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
833
°
C/W
°
C
R
θ
T
J
, T
STG
JA
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
50
V
BV
DSS
I
DSS
⎯
⎯
⎯
60
V
GS
= 0V, I
D
= 10µA
V
DS
= 50V, V
GS
= 0V
nA
@ T
C
= +25°C
⎯
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
GS
= ±5V, V
DS
= 0V
1
500
50
μ
A
nA
nA
Gate-Body Leakage
I
GSS
⎯
⎯
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.49
1.2
V
V
GS(th)
⎯
V
DS
= V
GS
, I
D
= 250
μ
A
V
V
GS
= 1.8V, I
D
= 50mA
GS
= 2.5V, I
D
= 50mA
⎯
⎯
⎯
0.5
200
0.5
1.8
1.5
1.2
3.0
2.5
2.0
Static Drain-Source On-Resistance
R
DS (ON)
Ω
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
On-State Drain Current
1.4
⎯
⎯
A
mS
V
I
D(ON)
|Y
fs
|
⎯
⎯
1.4
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
V
SD
50
25
pF
pF
pF
C
iss
C
oss
C
rss
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= 25V, V
GS
= 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
5.0
Notes:
5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
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July 2012
© Diodes Incorporated
DMN5L06TK
Document number: DS30926 Rev. 5 – 2
DMN5L06TK
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Typical Transfer Characteristics
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1
Typical Output Characteristics
10
1
0
0
75
T
ch
, CHANNEL TEMPERATURE (°C)
Fig. 3
Gate Threshold Voltage vs. Channel
T
emperature
100
-25
25
150
125
-50
50
0
I
D
,
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
1
V
GS,
G
A
T
E SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Fig. 5
Static Drain-Source On-Resistance vs. Drain Current
Fig. 6
Static Drain-Source On-Resistance
vs. Gate-Source Voltage
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July 2012
© Diodes Incorporated
DMN5L06TK
Document number: DS30926 Rev. 5 – 2
DMN5L06TK
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Ambient
T
emperature
1
I
D
, DRAIN CURRENT (A)
Fig.10 Forward
Transfer Admittance vs. Drain Current
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July 2012
© Diodes Incorporated
DMN5L06TK
Document number: DS30926 Rev. 5 – 2
DMN5L06TK
Package Outline Dimensions
A
SOT523
Dim
A
B
C
D
G
H
J
K
L
Min
Max
0.30
0.85
1.75
⎯
1.10
1.70
0.10
0.80
0.30
0.20
0.65
8°
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
⎯
0.15
0.75
1.45
⎯
0.90
1.50
0.00
0.60
0.10
0.10
0.45
0°
C
B
G
H
K
M
N
M
N
α
J
L
D
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
1.8
0.4
0.51
1.3
Z
C
0.7
X
E
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July 2012
© Diodes Incorporated
DMN5L06TK
Document number: DS30926 Rev. 5 – 2
DMN5L06TK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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July 2012
© Diodes Incorporated
DMN5L06TK
Document number: DS30926 Rev. 5 – 2
