Diodes-Incorporated-DMN6040SE-13
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Green
DMN6040SE
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
Max
T
A
= +25°C
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
V
(BR)DSS
R
DS(ON)
Max
40m
Ω
@ V
GS
= 10V
55
mΩ
@ V
GS
= 4.5V
5.0A
4.2A
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (
Note 3)
Qualified to AEC-Q101 Standards for High Reliability
60V
Mechanical Data
Description
Case: SOT223
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Motor Control
Transformer Driving Switch
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
D
SOT223
G
S
Top View
Pin Out
–
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN6040SE-13
Marking
N6040
Reel Size (inches)
13
Quantity per Reel
2,500
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
N6040 = Product Type Marking Code
= Manufacturer’s Marking
YWW = Date Code Marking
Y = Year (ex: 16 = 2016)
YWW
N6040
WW = Week (01
–
53)
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July 2016
© Diodes Incorporated
DMN6040SE
D
atasheet number: DS36106 Rev. 3 – 2
DMN6040SE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Units
V
V
Gate-Source Voltage
±20
V
GSS
Steady
State
T
A
= +25°C
5.0
4.0
A
A
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 10V
7.1
5.5
t < 10s
I
D
I
DM
I
S
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Current (Note 7) L = 0.1mH
30
3.4
14.2
10
A
A
A
I
AS
E
AS
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
T
A
= +25°C
1.2
0.7
106
53
2
1.2
65
34
9
Total Power Dissipation (Note 5)
W
P
D
R
θ
JA
P
D
T
A
= +70°C
Steady State
t < 10s
T
A
= +25°C
T
A
= +70°C
Steady State
t < 10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
Thermal Resistance, Junction to Ambient (Note 6)
°C/W
°C/W
R
θ
JA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
θ
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
V
1
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
µA
nA
100
I
GSS
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
1
3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
30
35
0.7
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 6A
V
GS
= 0V, I
S
= 1A
40
55
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
1,287
57
C
ISS
C
OSS
C
RSS
R
G
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
44
1.2
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
22.4
10.4
4.9
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
G
Q
G
nC
V
DS
= 30V, I
D
= 4.3A
Q
GS
Q
GD
t
D(ON)
t
R
Gate-Drain Charge
3.0
Turn-On Delay Time
6.6
Turn-On Rise Time
8.1
V
GS
= 10V, V
DD
= 30V, R
G
= 6
Ω
,
I
D
= 4.3A
ns
Turn-Off Delay Time
20.1
4.0
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
18
ns
t
RR
I
S
= 4.3A, di/dt = 100A/
μ
s
I
S
= 4.3A, di/dt = 100A/
μ
s
11.9
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7. I
and E
rating are based on low frequency and duty cycles to keep T
= +25°C.
AS
AS
J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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July 2016
© Diodes Incorporated
DMN6040SE
D
atasheet number: DS36106 Rev. 3 – 2
DMN6040SE
20
16
20
16
V
= 5.0V
DS
12
8
12
8
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
4
0
4
0
T
= 25°C
A
T
= -55°C
A
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
, GATE-SOURCE VOLTAGE
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 2
Typical Transfer Characteristics
Figure 1 Typical Output Characteristic
0.10
0.09
0.10
0.08
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.06
0.04
I
= 3.5A
I
= 4.5A
D
D
V
V
= 4.5V
= 10V
GS
GS
0.02
0
0.01
0
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
16
20
I
D
, DRAIN-SOURCE CURRENT
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance
vs.
Drain Current and Gate Voltage
0.10
0.09
2.4
2.2
V
= 4.5V
GS
V
= 10V
GS
= 10A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
= 150°C
= 125°C
I
0.08
0.07
0.06
0.05
0.04
0.03
0.02
A
D
T
A
V
= 4.5V
= 5A
GS
I
D
T
= 85°C
A
A
T
= 25°C
T
= -55°C
A
0.01
0
0.2
0
50 -25
0
25
50
75 100
125 150
0
4
8
12
16
20
I
D
, DRAIN CURRENT
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
emperature
Figure 5 Typical On-Resistance vs.
Drain Current and
T
e
mperature
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July 2016
© Diodes Incorporated
DMN6040SE
D
atasheet number: DS36106 Rev. 3 – 2
DMN6040SE
4.0
3.5
0.10
0.08
3.0
2.5
2.0
1.5
1.0
V
= 4.5V
GS
0.06
0.04
I
= 500mA
D
I
= 1mA
D
I
= 250µA
D
V
= 2.5V
GS
I
= 200mA
D
0.02
0
0.5
0
-50 -25
0
25
50 75 100 125
150
T
J
, JUNCTION TEMPERATURE (
C)
– 50
-25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient
T
emperature
Figure 7 On-Resistance Variation with
T
emperature
20
16
C
iss
T
= 25°C
A
12
8
4
0
C
oss
C
rss
f = 1MHz
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOL
T
A
GE (V)
Figure 9 Diode Forward Voltage vs. Current
100
10
R
D
S
(
on)
V
I
= 30V
Limi
t
e
d
DS
= 4.3A
P
= 100µs
D
W
DC
P
1
= 10s
P
W
= 1s
W
P
= 100ms
W
T
J
(max)
= 150°C
T
A
= 25°C
0.1
P
= 10ms
P
W
= 1ms
W
V
GS
= 10V
Single Pul
s
e
DUT on 1 * MRP Board
0.01
0
5
10
15
20
25
0.1
1
10
100
Q
g
, TOTAL GATE CHARGE (nC)
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
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July 2016
© Diodes Incorporated
DMN6040SE
D
atasheet number: DS36106 Rev. 3 – 2
DMN6040SE
1
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
9
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
0.01
D = 0
.
0
05
R
JA
(t) = r(t) * R
JA
R
JA
= 100°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Figure 13
Transient Thermal Resistance
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© Diodes Incorporated
DMN6040SE
D
atasheet number: DS36106 Rev. 3 – 2
DMN6040SE
Package Outline Dimensions
SOT223
D
Q
b1
C
SOT223
Dim Min Max Typ
1.55 1.65 1.60
A1
0.010 0.15
0.05
A
E
E1
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
Gauge
Plane
0.25
Seating
Plane
L
e1
–
–
–
–
4.60
2.30
b
e
0.85 1.05 0.95
0.84 0.94 0.89
Q
A
A1
7°
All Dimensions in mm
Suggested Pad Layout
SOT223
X1
Y1
Dimensions Value
(in mm)
C
C1
X
X1
Y
2.30
6.40
1.20
3.30
1.60
1.60
8.00
C1 Y2
Y1
Y2
Y
C
X
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July 2016
© Diodes Incorporated
DMN6040SE
D
atasheet number: DS36106 Rev. 3 – 2
DMN6040SE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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July 2016
© Diodes Incorporated
DMN6040SE
D
atasheet number: DS36106 Rev. 3 – 2
