Diodes-Incorporated-DMN6068SE
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A Product Line of
Diodes Incorporated
DMN6068SE
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
I
D
V
(BR)DSS
R
DS(on)
T
A
= +25
C
Fast switching speed
5.6A
4.7A
68m
Ω
@ V
GS
= 10V
100m
Ω
@ V
GS
= 4.5V
60V
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish – Matte Tin annealed over Copper lead frame.
Applications
Motor Control
Transformer Driving Switch
DC-DC Converters
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
e3
Power Management Functions
Uninterrupted Power Supply
D
SOT223
G
S
Pin Out – Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4 & 5)
Part Number
DMN6068SE-13
DMN6068SEQ-13
Qualification
Standard
Automotive
Case
SOT223
SOT223
Packaging
4000 / Tape & Reel
4000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
Marking Information
= Manufacturer’s Marking
N6068 = Product Type Marking Code
YWW = Date Code Marking
Y = Year (ex: 9 = 2009)
YWW
N6068
WW = Week (01 – 53)
1 of 9
September 2013
© Diodes Incorporated
DMN6068SE
Document Number DS32033 Rev. 4 – 2
A Product Line of
Diodes Incorporated
DMN6068SE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GS
Value
60
Unit
V
Drain-Source voltage
Gate-Source voltage
(Note 6)
V
20
37.5
5.0
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 11)
(Note 11)
(Note 8)
mJ
A
E
AS
I
AS
5.6
Continuous Drain current
4.5
A
V
V
GS
= 10V
GS
= 10V
T
A
= +70°C (Note 8)
(Note 7)
I
D
4.1
Pulsed Drain current
(Note 9)
20.8
4.9
A
A
A
I
DM
I
S
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 8)
(Note 9)
20.8
I
SM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
2.0
16.0
(Note 7)
(Note 8)
Power dissipation
W
P
D
Linear derating factor
mW/°C
3.7
29.5
(Note 7)
(Note 8)
(Note 10)
62.5
34
Thermal Resistance, Junction to Ambient
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Lead
Operating and storage temperature range
11.5
R
θ
JL
-55 to +150
T
J
, T
STG
Notes:
6. AEC-Q101 V
GS
maximum is
16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (3), except the device is measured at t
10 sec.
9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300µs.
The pulse current is limited by the maximum junction temperature.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, I
AS
= 5.0A, R
G
= 25
ꢀ
, V
DD
=50V, starting T
J
= +25°C.
2 of 9
September 2013
© Diodes Incorporated
DMN6068SE
Document Number DS32033 Rev. 4 – 2
A Product Line of
Diodes Incorporated
DMN6068SE
Thermal Characteristics
R
DS(on)
2.0
1.6
1.2
0.8
0.4
0.0
10
Limited
1
100m
10m
DC
1s
100ms
10ms
1ms
Single Pulse
T
amb
=25°C
100µs
100m
1
10
0
20
40 60 80
100 120 140 160
V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
70
60
50
40
30
20
10
0
T
amb
=25°C
Single Pulse
T
amb
=25°C
100
10
1
D=0.5
Single Pulse
D=0.2
D=0.05
D=0.1
100µ 1m
10m 100m
1
10
100
1k
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
3 of 9
September 2013
© Diodes Incorporated
DMN6068SE
Document Number DS32033 Rev. 4 – 2
A Product Line of
Diodes Incorporated
DMN6068SE
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
60
V
BV
DSS
I
DSS
0.5
I
D
= 250µA, V
GS
= 0V
µA
nA
V
V
DS
= 60V, V
GS
= 0V
I
GSS
100
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
1.0
3.0
0.068
0.100
V
V
GS(th)
I
D
= 250µA, V
DS
= V
GS
V
V
GS
= 10V, I
D
= 12A
GS
= 4.5V, I
D
= 6A
Static Drain-Source On-Resistance (Note 12)
ꢀ
R
DS (ON)
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 12)
Reverse recovery time (Note 13)
Reverse recovery charge (Note 13)
DYNAMIC CHARACTERISTICS
(Note 13)
Input Capacitance
19.7
0.98
145
929
S
V
g
fs
V
SD
t
rr
V
DS
= 15V, I
D
= 12A
I
S
= 12A, V
GS
= 0V
1.15
ns
nC
I
S
= 12A, di/dt= 100A/µs
Q
rr
502
45.7
27.1
5.55
10.3
1.6
pF
pF
pF
nC
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= 30V, V
GS
= 0V
f= 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 14)
Total Gate Charge (Note 14)
Gate-Source Charge (Note 14)
Gate-Drain Charge(Note 14)
Turn-On Delay Time (Note 14)
Turn-On Rise Time (Note 14)
Turn-Off Delay Time (Note 14)
Turn-Off Fall Time (Note 14)
V
GS
= 4.5V
Q
g
V
DS
= 30V
I
D
= 12A
Q
gs
Q
gd
t
D(on)
t
r
V
GS
= 10V
3.5
3.6
10.8
11.9
8.7
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 12A, R
G
6.0
ꢀ
ns
t
D(off)
t
f
ns
Notes:
12. Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
4 of 9
September 2013
© Diodes Incorporated
DMN6068SE
Document Number DS32033 Rev. 4 – 2
A Product Line of
Diodes Incorporated
DMN6068SE
Typical Characteristics
10V
T = 25°C
10
T = 150°C
10V
5V
4.5V
4V
4.5V
10
1
4V
3.5V
3V
1
3.5V
V
G
S
2.5V
V
G
S
0.1
0.1
0.01
3V
2V
0.01
0.1
1
0.1
1
V
Drain-Source Voltage
1
(
V
0
)
V
Drain-Source Voltage
1
(
V
0
)
DS
DS
Output Characteristics
Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
1
V
G
S
= 10V
I
D
= 12A
V
DS
= 10V
R
DS(on)
T = 150°C
0.1
T = 25°C
V
G
S(th)
0.01
1E-3
V
G
S
= V
DS
I
D
= 250uA
3
4
5
-50
0
50
150
Tj Junction
Temperatu
1
r
e
0
0
(°C)
1
V
GS
Ga
2
te-Source Voltage (V)
Typical Transfer Characteristics
Normalised Curves v Temperature
100
3V
V
G
S
10
3.5V
10
4V
T = 150°C
1
1
5V
T = 25°C
4.5V
0.1
0.1
10V
Vgs = 0V
0.8 1.0
V
SD
Source-Drain Voltage (V)
T = 25°C
0.1
0.01
0.01
0.2
0.4
0.6
0.01
I
D
Drain
C
1
urrent (A)
10
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
5 of 9
September 2013
© Diodes Incorporated
DMN6068SE
Document Number DS32033 Rev. 4 – 2
A Product Line of
Diodes Incorporated
DMN6068SE
Typical Characteristics
(cont.)
10
8
V
G
S
= 0V
f = 1MHz
600
C
ISS
6
400
C
O
SS
4
C
R
SS
200
0
V
DS
= 30V
2
I
D
= 12A
0
0.1
1
10
0
2
4
6
8
10
V
DS
– Drain – Source Voltage (V)
Q – Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
20
40
30
20
10
Starting T
J
= 25°C
15
10
5
100µ
1m
L Inductor (H)
Single-Pulsed Avalanche Rating
6 of 9
September 2013
© Diodes Incorporated
DMN6068SE
Document Number DS32033 Rev. 4 – 2
A Product Line of
Diodes Incorporated
DMN6068SE
Test Circuits
C
u
rrent
regulator
Q
G
50k
S
a
me as
D.U.T
12V
Q
G
S
Q
G
D
V
G
V
DS
I
G
D.U.T
I
D
V
GS
C
h
arge
Basic gate charge
w
a
veform
Gate charge test circuit
V
DS
90%
R
D
V
GS
V
DS
R
G
V
DD
10%
V
G
S
t
d(on)
t
r
t
d(off)
t
r
t
(on)
t
(on)
S
w
i
tching time
w
a
veforms
S
w
i
tching time test circuit
7 of 9
September 2013
© Diodes Incorporated
DMN6068SE
Document Number DS32033 Rev. 4 – 2
A Product Line of
Diodes Incorporated
DMN6068SE
Package Outline Dimensions
D
Q
b1
C
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15
0.05
E
E1
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
Gauge
Plane
0.25
Seating
Plane
L
–
–
–
–
4.60
2.30
e1
b
0.85 1.05 0.95
0.84 0.94 0.89
e
Q
All Dimensions in mm
A
A1
7
°
Suggested Pad Layout
X1
Dimensions Value
(in mm)
Y1
X1
X2
Y1
Y2
C1
C2
3.3
1.2
1.6
1.6
6.4
2.3
C1
Y2
C2
X2
8 of 9
September 2013
© Diodes Incorporated
DMN6068SE
Document Number DS32033 Rev. 4 – 2
A Product Line of
Diodes Incorporated
DMN6068SE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
9 of 9
September 2013
© Diodes Incorporated
DMN6068SE
Document Number DS32033 Rev. 4 – 2
