Diodes-Incorporated-DMN6140LQ-13
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DMN6140L
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
V
(BR)DSS
R
DS(on) max
T
A
= +25°C
Low Input Capacitance
Fast Switching Speed
2.3A
2.1A
140m
@ V
GS
= 10V
170m
@ V
GS
= 4.5V
60V
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
DC-DC Converters
Power Management Functions
Analog Switch
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.0072 grams (Approximate)
D
SOT23
D
G
S
G
S
Pin Configuration
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMN6140L-7
DMN6140L-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
N61 = Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
N61
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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December 2014
© Diodes Incorporated
DMN6140L
Document number: DS35621
Rev. 4 – 2
DMN6140L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Units
V
V
Gate-Source Voltage
20
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
1.6
1.2
A
A
A
A
I
D
I
D
I
D
I
D
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
2.0
1.6
t<10s
Steady
State
2.3
1.8
2.9
2.3
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
1.5
10
A
A
I
S
Pulsed Drain Current (10
μ
s pulse, duty cycle = 1%)
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
0.7
Units
T
A
= +25°C
Total Power Dissipation (Note 5)
T
A
= +70°C
W
0.4
Steady State
183
115
1.3
Thermal Resistance, Junction to Ambient (Note 5)
t<10s
°C/W
W
R
JA
T
A
= +25°C
Total Power Dissipation (Note 6)
T
A
= +70°C
P
D
0.8
94
61
39
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s
°C/W
°C
Thermal Resistance, Junction to Case
R
JC
Operating and Storage Temperature Range
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
µA
nA
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
—
92
3
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1.8A
V
GS
= 4.5V, I
D
= 1.3A
V
DS
= 15V, I
D
= 1.8A
V
GS
= 0V, I
S
= 0.45A
140
170
—
Static Drain-Source On-Resistance
—
m
Ω
R
DS(ON)
115
2.2
0.75
—
—
Forward Transfer Admittance
Diode Forward Voltage
S
V
|Y
fs
|
V
SD
1.0
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
315
18
C
iss
C
oss
C
rss
R
g
V
DS
= 40V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistnace
16
0.65
8.6
4.1
1.0
1.7
2.6
3.6
16.3
2.7
16.8
9.0
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 5V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DS
= 30V, I
D
= 1.8A
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DS
= 30V, V
GS
= 10V,
R
G
= 6.0
Ω
I
D
= 1.8A
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
rr
I
F
= 1.8A, di/dt =100A/µs
nC
Q
rr
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1in. square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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December 2014
© Diodes Incorporated
DMN6140L
Document number: DS35621
Rev. 4 – 2
DMN6140L
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
8
6
4
2
0
V
= 5.0V
DS
V
= 10V
GS
V
= 4.5V
GS
V
= 4.0V
GS
V
= 3.5V
GS
V
= 3.0V
GS
T
= 150°C
A
T
= 85°C
A
T
= 125°C
A
T =
25°C
A
V
= 2.5V
GS
T
= -55°C
A
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2 Typical Transfer Characteristics
0.2
0.5
0.4
0.3
0.2
0.1
0.18
I
= 1.8A
D
0.16
0.14
V
= 4
.
5
V
GS
0.12
0.1
V
= 10V
GS
0.08
0.06
0.04
I
= 1.3A
D
0.02
0
1
2
3
4
5
6
7
8
0
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
2
3
4
5
6
7
8
9
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On Resistance
vs. Gate-Source Voltage
0.4
0.36
0.32
0.28
0.24
0.2
2.2
V
= 4.5V
GS
2
V
= 10V
1.8
1.6
1.4
1.2
GS
=5.0A
I
D
T
= 150°C
A
V
= 4.5V
GS
= 2.5A
I
D
T
= 125°C
T
A
1
= 85°C
A
0.16
0.12
0.08
0.04
0
0.8
0.6
0.4
0.2
T
= 25°C
A
T
= -55°C
A
0
0
1
2
3
4
5
6
7
8
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
I
D
, DRAIN CURRENT (A)
Figure 6 On-Resistance Variation with
T
emperature
Figure 5 Typical On-Resistance vs.
Drain Current and
T
e
mperature
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December 2014
© Diodes Incorporated
DMN6140L
Document number: DS35621
Rev. 4 – 2
DMN6140L
0.3
0.24
0.18
0.12
0.06
0
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
V
= 4.5V
GS
I
= 1mA
D
I
= 2.5A
D
I
= 250µA
D
V
I
= 10V
GS
= 5.0A
D
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
TJ, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
mperature
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
C
iss
T
= 25°C
A
C
oss
C
rss
f=1MHz
0
0.2
0.4
0.6
0.8
1
1.2
0
5
10
15
20
25
30
35
40
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Junction Capacitance
100
10
10
8
V
I
= 30V
DS
= 1.8A
R
DS(on)
D
Limited
P
= 10µs
W
6
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
4
0.1
P
= 10ms
W
P
= 1ms
W
P
= 100µs
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1*MRP board
W
2
0.01
0.001
0
0
2
4
6
8
10
0.1
1
10
100
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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December 2014
© Diodes Incorporated
DMN6140L
Document number: DS35621
Rev. 4 – 2
DMN6140L
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
JA
(t) = r(t) * R
JA
R
JA
= 169°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
All 7°
H
SOT23
GAUGE PLANE
Dim
A
B
C
D
F
G
H
J
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.25
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
C
B
K
K1
L
L1
M
0.890 1.00 0.975
0.903 1.10 1.025
0.45
0.25
0.61
0.55
0.55
0.40
D
0.085 0.150 0.110
8°
G
F
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
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December 2014
© Diodes Incorporated
DMN6140L
Document number: DS35621
Rev. 4 – 2
DMN6140L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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December 2014
© Diodes Incorporated
DMN6140L
Document number: DS35621
Rev. 4 – 2
