Diodes-Incorporated-DMN61D8L-7
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DMN61D8L/LVT
Product Summary
Features and Benefits
Provides a more reliable and robust interface between sensitive
logic and DC relay coils.
I
D
max
V
(BR)DSS
R
DS(ON)
max
T
A
= +25°C
Replaces 3-4 discrete components enabling PCB footprint to be
reduced.
1.8
Ω @ V
GS
= 5V
2.4
Ω @ V
GS
= 3V
60V
470mA
Internal active clamp removes the need for external zener diode.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: SOT23
DMN61D8L/LVT provides a single component solution for switching
inductive loads such as relays, solenoids, and small DC motors in
automotive applications, without the need of a freewheeling diode.
DMN61D8L/LVT accepts logic level inputs, thus allowing it to be
driven by logic gates, inverters, and microcontrollers. It is ideally
suited for doors, windows, and antenna relay coils.
Case Material: Molded Plastic, “Green” Molding Compound
;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
Matte Tin Annealed over Alloy 42 Leadframe.
(Lead-Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound
;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals Connections: See Diagram
ESD protected
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
SOT-23
D
S
G
Equivalent Circuit
TSOT26
Top View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN61D8L-7
Case
Packaging
SOT23
SOT23
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
DMN61D8L-13
DMN61D8LVT-7
DMN61D8LVT-13
TSOT26
TSOT26
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tota
l Br + Cl) and
<1000ppm antimony compounds.
1 of 9
April 2015
© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630
Rev. 3 – 2
DMN61D8L/LVT
Marking Information
1D8 YM
Y M
8 D
1
1D8 = Product Type Marking Code
YM = Date Code Marking
1D8
Y
or
Y
̅
= Year (ex: C= 2015)
M = Month (ex: 9 = September)
SOT23
TSOT26
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
Gate-Source Voltage
60
V
V
V
DSS
V
GSS
±12
Steady
State
470
370
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) SOT23
Continuous Drain Current (Note 6) TSOT26
mA
I
D
Steady
State
630
500
T
A
= +25°C
T
A
= +70°C
mA
A
I
D
I
S
Maximum Continuous Body Diode Forward Current (Note 6)
Single Pulse Drain-to-Source Avalanche Energy
0.5
200
20
E
Z
mJ
W
(for relay coils/inductive loads of 80
Ω
or higher) (T
J
initial =
+
85
°
C)
Peak Power Dissipation, Drain-to-Source (non-repetitive current square
pulse 1.0 ms duration) (T
J
initial = +85°C)
P
PK
Load Dump Pulse, Drain-to-Source, R
SOURCE
= 0.5Ω, T = 300 ms)
(for relay coils/inductive loads of 80
Ω
or higher) (T
J
Initial = +85°C)
E
LD1
60
V
V
Inductive Switching Transient 1, Drain-to-Source
(Waveform: R
SOURCE
= 10Ω, T = 2.0 ms)
E
LD2
100
(for relay coils/inductive loads of 80
Ω
or higher) (T
J
Initial = +85°C)
Inductive Switching Transient 2, Drain-to-Source
(Waveform: R
SOURCE
= 4.0Ω, T = 50
µs)
(for relay coils/inductive loads of 80
Ω
or higher) (T
J
Initial = +85°C)
E
LD3
300
-14
V
V
Reverse Battery, 10 Minutes (Drain-to-Source)
(for relay coils/inductive loads of 80
Ω
or higher)
Rev−Bat
Dual Voltage Jump Start, 10 Minutes (Drain-to-Source)
ESD Human Body Model (HBM)
Dual−Volt
28
V
V
ESD
4,000
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April 2015
© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630
Rev. 3 – 2
DMN61D8L/LVT
Thermal Characteristics (SOT23)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
Units
mW
Total Power Dissipation (Note 5)
390
321
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
mW
R
θ
JA
610
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
208
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Thermal Characteristics (TSOT26)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
820
Units
mW
Total Power Dissipation (Note 5)
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
154
°C/W
mW
R
θ
JA
1090
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
116
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10mA
V
DS
= 60V, V
GS
= 0V
V
DS
= 12V, V
GS
= 0V
50
0.5
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
V
GS
= ±5V, V
DS
= 0V
V
GS
= ±3V, V
DS
= 0V
±90
±60
µA
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.3
2.0
V
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA
V
GS
=5V, I
D
= 0.15A
V
GS
= 3V, I
D
= 0.15A
V
DS
=12V, I
D
= 0.15A
V
GS
= 0V, I
S
= 0.15A
1.1
1.4
1.8
2.4
Static Drain-Source On-Resistance
Ω
R
DS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
80
ms
V
|Y
fs
|
V
SD
1.2
12.9
17
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= 12V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
0.84
0.74
0.19
0.16
131
301
582
440
V
GS
= 5V, V
DS
= 12V,
I
D
=150mA
Gate-Source Charge
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 12V, V
GS
= 5V.
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6.
Device mounted on 1” x 1” FR
-4 PCB with high coverage 2oz. copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
3 of 9
April 2015
© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630
Rev. 3 – 2
DMN61D8L/LVT
1
1
V
= 10V
GS
V
= 3
.
0
V
GS
V
V
= 5
.
0
V
DS
= 4
.
0
V
GS
V
= 4
.
5
V
GS
0.8
0.8
V
= 5
.
0
V
GS
0.6
0.4
0.2
0
0.6
0.4
V
= 2
.
5
V
GS
T
= 150°C
A
T
A
= 125°C
T
= 85°C
A
0.2
0
T
= 25°C
A
V
= 2
.
0
V
= 1
.
8
V
GS
T
= -55°C
A
V
GS
1.5
3.5
1
2
2.5
3
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
2
1.8
1.6
1.4
5
4
3
V
= 3V
GS
V
= 5V
1.2
1
GS
I
= 150mA
D
2
0.8
1
0
0.6
0.4
0.1 0.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
2
4
6
8
10
12
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Transfer Characteristic
3
2
V
= 5V
GS
1.8
1.6
1.4
1.2
V
= 5V
2.5
2
GS
= 150mA
I
T
= 150°C
= 125°C
D
A
T
A
V
= 3V
GS
= 150mA
I
D
T
= 85°C
= 25°C
A
1.5
1
T
A
1
T
= -55°C
A
0.5
0
0.8
0.6
0
0.2
0.4
0.6
0.8
1
100 125
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
–
5
0
–
2
5
0
25
50
75
150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
4 of 9
April 2015
© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630
Rev. 3 – 2
DMN61D8L/LVT
3
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
2.5
I
= 1mA
D
V
= 3V
GS
2
1.5
1
I
= 150mA
D
I
= 250µA
D
V
= 5V
GS
I
= 150mA
D
0.5
0
1
0.9
–
5
0
–
2
5
25
0
50
75 100 125 150
–
5
0
–
2
5
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
1
100
f = 1MHz
T
= 150°C
0.8
A
C
iss
T
= 125°C
A
10
C
o
s
s
T
= 85°C
= 25°C
0.6
A
T
0.4
0.2
0
A
1
C
r
s
s
T
= -55°C
A
0
0
5
10
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
7
6
5
4
3
2
1
0
V
I
= 12V
DS
= 150mA
D
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
5 of 9
April 2015
© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630
Rev. 3 – 2
DMN61D8L/LVT
SOT23:
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
R
t
h
ja
(t) = r(t) * R
t
h
ja
R
JA
= 323°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
TSOT26:
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
R
t
h
j
a
(t) = r(t) * R
t
h
ja
R
JA
= 154°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
6 of 9
April 2015
© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630
Rev. 3 – 2
DMN61D8L/LVT
Package Outline Dimensions
SOT23
All 7°
H
GAUGE PLANE
SOT23
0.25
J
Dim
A
B
C
D
F
G
H
J
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
L1
M
0.085 0.150 0.110
8°
D
G
F
All Dimensions in mm
TSOT26
D
TSOT26
Dim Min Max
Typ
e1
A
A1
A2
D
E
E1
b
c
e
e1
L
L2
θ
1.00
0.01 0.10
0.84 0.90
2.90
2.80
1.60
0.95
1.90
E
E1
L2
c
0.30 0.45
0.12 0.20
L
4x
1
e
6x b
0.30 0.50
A2
A1
A
0.25
4°
0°
4°
8°
12°
θ1
All Dimensions in mm
7 of 9
April 2015
© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630
Rev. 3 – 2
DMN61D8L/LVT
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
TSOT26
C
C
Dimensions Value
(in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y (6x)
X (6x)
8 of 9
April 2015
© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630
Rev. 3 – 2
DMN61D8L/LVT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
9 of 9
April 2015
© Diodes Incorporated
DMN61D8L/LVT
Document number: DS37630
Rev. 3 – 2
