Diodes-Incorporated-DMN62D0UT-13
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DMN62D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance: R
DS(ON)
I
D
max
Low Gate Threshold Voltage
BV
DSS
R
DS(ON)
max
T
A
= +25°C
Low Input Capacitance
2
Ω @ V
GS
= 4.5V
Fast Switching Speed
60V
320mA
2.5
Ω @ V
GS
= 2.5V
Low Input/Output Leakage
ESD Protected Up To 1kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making
it ideal for high-efficiency power management applications.
Mechanical Data
Applications
Case: SOT523
Case Material: Molded Plastic, “Green” Molding
Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Motor Control
Power Management Functions
Terminals: Finish
Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (Approximate)
SOT523
D
D
G
G
S
Gate Protection
Diode
S
Top View
Pin Out
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN62D0UT-7
DMN62D0UT-13
Case
SOT523
SOT523
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <
900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
TK9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
TK9
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
Code
D
E
F
G
H
I
J
K
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 7
August 2016
© Diodes Incorporated
DMN62D0UT
Document number: DS38186
Rev. 3 – 2
DMN62D0UT
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Units
V
V
Gate-Source Voltage
±20
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
320
260
mA
Continuous Drain Current (Note 6) V
GS
= 4.5V
I
D
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
0.4
1.2
A
A
I
S
I
DM
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
230
Units
mW
Total Power Dissipation (Note 5)
P
D
R
θ
JA
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
546
°C/W
mW
340
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
377
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max Unit
Test Condition
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
60
—
—
—
1.0
±10
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
µA
—
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
—
1.0
V
V
GS(TH)
R
DS(ON)
V
DS
= 10V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 0.1A
V
GS
= 2.5V, I
D
= 0.05A
V
GS
= 1.8V, I
D
= 0.05A
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
1.2
1.4
1.8
2.0
2.5
3.0
Static Drain-Source On-Resistance
—
Ω
1.8
0.8
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
S
V
|Y
fs
|
V
SD
1.3
—
—
—
—
—
—
—
—
—
—
—
32
3.9
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2.4
101
0.5
f = 1MHz , V
GS
= 0V, V
DS
= 0V
Total Gate Charge
nC
nC
nC
ns
ns
Q
g
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Gate-Drain Charge
0.09
0.09
2.4
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
Turn-On Rise Time
2.5
V
DD
= 30V, V
GS
= 10V,
Turn-Off Delay Time
Turn-Off Fall Time
22.6
12.5
ns R
G
= 25
Ω
, I
D
= 200mA
t
D(OFF)
t
F
ns
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6.
Device mounted on 1” x 1” FR
-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
August 2016
© Diodes Incorporated
DMN62D0UT
Document number: DS38186
Rev. 3 – 2
DMN62D0UT
1.0
0.8
0.6
0.4
0.2
0.0
0.8
0.6
0.4
0.2
0
V
DS
=5V
V
DS
=5V
V
GS
=2.5V
V
GS
=3.0V
V
GS
=4.5V
V
GS
=2.0V
V
GS
=1.8V
T
A
=125
℃
T
A
=150
℃
T
A
=85
℃
T
A
=25
℃
V
GS
=1.5V
V
GS
=1.3V
T
A
=-55
℃
0
1
2
3
4
5
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
3
3
2.5
2
2.5
2
V
GS
=2.5V
1.5
1
V
GS
=4.5V
1.5
1
I
D
=100mA
0.5
0
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
4.5
4
2.2
2
T
A
=150
℃
V
GS
= 4.5V
T
A
=125
℃
T
A
=85
℃
3.5
3
1.8
1.6
1.4
1.2
1
V
GS
=4.5V, I
D
=100mA
2.5
2
T
A
=25
℃
T
A
=-55
℃
1.5
1
V
GS
=2.5V, I
D
=50mA
0.8
0.6
0.5
0
0
0.2
0.4
0.6
0.8
1
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
3 of 7
August 2016
© Diodes Incorporated
DMN62D0UT
Document number: DS38186
Rev. 3 – 2
DMN62D0UT
1.2
1.1
1
3.5
3
2.5
2
V
GS
=2.5V, I
D
=50mA
I
D
=1mA
0.9
0.8
0.7
0.6
0.5
0.4
1.5
1
I
D
=250
μ
A
V
GS
=4.5V, I
D
=100mA
0.5
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
1
0.8
0.6
0.4
0.2
0
100
f=1MHz
C
iss
V
GS
=0V, T
A
=85
℃
V
GS
=0V, T
A
=125
℃
V
GS
=0V, T
A
=150
℃
10
C
oss
C
rss
V
GS
=0V, T
A
=25
℃
V
GS
=0V, T
A
=-55
℃
1
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
4.5
4
R
DS(ON)
Limited
P
W
=100
μ
s
P
W
=1ms
3.5
3
1
0.1
2.5
2
V
DS
=10V, I
D
=250mA
P
W
=10ms
P
W
=100ms
1.5
1
T
J(MAX)
=150
℃
P
W
=1s
0.01
0.001
T
A
=25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
=4.5V
P
W
=10s
10
0.5
0
DC
0.1
1
100
0
0.1
0.2
0.3
Q
g
(nC)
Figure 11. Gate Charge
0.4
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
August 2016
© Diodes Incorporated
DMN62D0UT
Document number: DS38186
Rev. 3 – 2
DMN62D0UT
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=549
℃
/W
Duty Cycle, D=t1 /
t2
D=Single Pulse
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
August 2016
© Diodes Incorporated
DMN62D0UT
Document number: DS38186
Rev. 3 – 2
DMN62D0UT
Package Outline Dimensions
SOT523
A
SOT523
Dim
A
B
C
D
G
H
J
K
L
Min
Max
0.30
0.85
1.75
1.10
1.70
0.10
0.80
0.30
0.20
0.65
8°
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
0.15
0.75
1.45
0.90
1.50
0.00
0.60
0.10
0.10
0.45
0°
C
B
G
H
K
J
M
N
M
N
L
D
All Dimensions in mm
Suggested Pad Layout
SOT523
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
1.8
0.4
0.51
1.3
Z
C
0.7
X
E
6 of 7
August 2016
© Diodes Incorporated
DMN62D0UT
Document number: DS38186
Rev. 3 – 2
DMN62D0UT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
7 of 7
August 2016
© Diodes Incorporated
DMN62D0UT
Document number: DS38186
Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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