Diodes-Incorporated-DMN62D1LFD-13
| Part # | Diodes-Incorporated-DMN62D1LFD-13 |
Download  | Diodes-Incorporated-DMN62D1LFD-13 |
DMN62D1LFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
BV
DSS
R
DS(ON)
Low Input Capacitance
T
A
= +25°C
400mA
Fast Switching Speed
2
Ω @ V
GS
= 4V
60V
Low Input/Output Leakage
2.5
Ω @ V
GS
= 2.5V
350mA
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
An Automotive-Compliant Part is Available Under Separate
Mechanical Data
Description and Applications
Case: U-DFN1212-3
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper Leadframe. Solderable per MIL-
DC-DC Converters
STD-202, Method 208
Power Management Functions
e4
Terminal Connections: See Diagram
Weight: 0.005 grams (Approximate)
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
U-DFN1212-3 (Type C)
D
S
S
G pin
D
G
G
Gate Protection
Diode
ESD PROTECTED
Bottom View
Top View
Pin-Out Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN62D1LFD
-7
DMN62D1LFD
-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN1212-3
(Type C)
U-DFN1212-3
(Type C)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
1 of 8
February 2020
© Diodes Incorporated
DMN62D1LFD
Document number: DS36476 Rev. 3 – 2
DMN62D1LFD
Marking Information
Site 1:
K64 = Product Type Marking Code
K63 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
M = Month (ex: 9 = September)
K64
YM
K63
YM
Date Code Key
Year
2014
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
B
…
H
I
J
K
L
M
N
O
P
R
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2:
K64 = Product Type Marking Code
K63 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2014
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
4
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
2 of 8
February 2020
© Diodes Incorporated
DMN62D1LFD
Document number: DS36476 Rev. 3 – 2
DMN62D1LFD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
Unit
V
60
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
T
A
= +70°C
400
310
mA
A
Continuous Drain Current (Note 5) V
GS
= 4V
Pulsed Drain Current (Note 6)
I
D
1
I
DM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Max
0.5
Unit
W
237
°C/W
°C
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
R
θJA
-55 to +150
T
J
,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±15V, V
DS
= 0V
µA
nA
nA
µA
Zero Gate Voltage Drain Current T
J
= +25°C
±100
±500
±2
Gate-Source Leakage
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.6
—
—
—
—
—
—
—
0.8
1
1
2
V
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 1.5V, I
D
= 10mA
V
DS
= 10V, I
D
= 200mA
V
GS
= 0V, I
S
= 115mA
2.5
3
Static Drain-Source On-Resistance
Ω
R
DS(ON)
1.4
1.8
1.8
0.8
—
—
1.3
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
S
V
|Y
fs
|
V
SD
—
—
—
—
—
—
—
—
—
—
—
36
4.6
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
3.6
59.8
0.55
0.08
0.12
2.1
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Gate-Drain Charge
nC
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
ns
ns
ns
ns
V
GS
= 10V, V
DS
= 30V,
R
L
= 150
Ω, R
G
= 25
Ω
,
I
D
= 200mA
Turn-On Rise Time
2.8
Turn-Off Delay Time
21
t
D(OFF)
t
F
Turn-Off Fall Time
13.9
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
3 of 8
February 2020
© Diodes Incorporated
DMN62D1LFD
Document number: DS36476 Rev. 3 – 2
DMN62D1LFD
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0
V
= 2.0V
GS
V
= 5.0V
DS
V
= 2.5V
GS
= 3.0V
V
GS
V
= 3.5V
GS
V
= 4.0V
GS
V
= 4.5V
GS
V
= 1.5V
GS
T
= 150°C
A
T
= 85°C
A
T
= 125°C
A
T
= 25°C
A
V
= 1.2V
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
0
0.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
2.5
2
5
I
= 100mA
D
4.5
4
V
= 1.8V
GS
3.5
3
I
= 50mA
D
2.5
2
1.5
1
1.5
1
V
= 2.5V
GS
V
= 4.5V
GS
0.5
0
0.5
0
2
4
6
8
10 12 14 16 18 20
0
0.1
0.2
0.3
0.4
0.5
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2.4
2
1.8
1.6
1.4
1.2
1
V
= 4.5V
GS
T
= 150°C
A
2
1.6
1.2
0.8
0.4
V
= 4V
GS
= 200mA
I
D
T =
125°C
A
T
= 85°C
A
V
= 2.5V
GS
= 100mA
I
D
T
= 25°C
A
0.8
0.6
0.4
0.2
0
T
= -55°C
A
-50 -25
0
25
50
75 100
125 150
0
0.1
0.2
0.3
0.4
0.5
T
J
, JUNCTION TEMPER
A
T
URE (
C)
I
D
, DRAIN CURRENT (A)
Figure 6 On-Resistance Variation with
T
emperature
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
4 of 8
February 2020
© Diodes Incorporated
DMN62D1LFD
Document number: DS36476 Rev. 3 – 2
DMN62D1LFD
2.5
2
1.2
1
I
D
= 1mA
V
= 2.5V
GS
= 100mA
0.8
0.6
0.4
0.2
0
I
D
1.5
1
V
= 4V
GS
I
D
= 250
μ
A
I
= 200mA
D
0.5
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8 Gate Threshold Variation vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance
V
a
riation with
T
emperature
100
0.5
0.4
0.3
0.2
0.1
0
f = 1MHz
C
iss
10
C
T
= 150°C
oss
A
T
= 85°C
A
T
= 125°C
C
A
rss
T
= 25°C
A
T
= -55°C
A
1
0
10
20
30
40
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
8
10
R
DS(ON)
Limited
P
W
= 100µs
P
W
= 1ms
1
0.1
6
V
I
= 10V
DS
= 250mA
D
P
W
= 10ms
4
P
W
= 100ms
P
W
= 1s
P
W
= 10s
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP
Board
0.01
0.001
2
DC
V
GS
= 4.5V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
100
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
5 of 8
February 2020
© Diodes Incorporated
DMN62D1LFD
Document number: DS36476 Rev. 3 – 2
DMN62D1LFD
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
J
A
R
θ
JA
(t) = r(t) * R
θ
R
= 234
℃
/W
θ
J
A
Duty Cycle, D = t1 / t2
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
6 of 8
February 2020
© Diodes Incorporated
DMN62D1LFD
Document number: DS36476 Rev. 3 – 2
DMN62D1LFD
Package Outline Dimensions
U-DFN1212-3 (Type C)
U-DFN1212-3
Type C
A3
A1
A
Dim Min
Max Typ
Seating Plane
A
A1
A3
b
b1
D
0.47 0.53 0.50
0
–
0.05 0.02
0.13
D
e
–
L
0.27 0.37 0.32
0.17 0.27 0.22
1.15 1.25 1.20
b1
D2
0.75 0.95 0.85
e
–
–
0.80
E
1.15 1.25 1.20
E
E2
D2
E2
0.40 0.60 0.50
L
L1
L1
0.25 0.35 0.30
0.65 0.75 0.70
All Dimensions in mm
b
Suggested Pad Layout
U-DFN1212-3 (Type C)
X2
X1
Value
Dimensions
Y1
(in mm)
C
G
X
X1
X2
Y
Y1
Y2
0.800
0.200
0.320
0.520
1.050
0.450
0.250
0.850
Y2
Y
G
X
C
7 of 8
February 2020
© Diodes Incorporated
DMN62D1LFD
Document number: DS36476 Rev. 3 – 2
DMN62D1LFD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without
further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or
use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights,
nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use
and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against
all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final
and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
8 of 8
February 2020
© Diodes Incorporated
DMN62D1LFD
Document number: DS36476 Rev. 3 – 2
