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DMN63D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified
representative.
I
D
BV
DSS
R
DS(ON)
T
A
= +25°C
200mA
4.2
Ω @ V
GS
= 4.5V
2.8
Ω @ V
GS
= 10V
30V
260mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
)
Applications
Mechanical Data
DC-DC Converters
Case: SOT363
Power Management Functions
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
SOT363 (Standard)
D
1
G
2
S
2
D1
G1
ESD PROTECTED
S
1
G
1
D
2
Gate Protection
Diode
Top View
S1
Top View
Pin Out
Q2 N-Channel
Q1 N-Channel
Ordering Information
(Note 4)
Part Number
DMN63D8LDW
-7
DMN63D8LDW
-13
Case
SOT363 (Standard)
SOT363 (Standard)
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
MM4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: I = 2021)
MM4
M Y
YM
4 M
M
M = Month (ex: 9 = September)
Date Code Key
Year
2012
…
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
Z
…
I
J
K
L
M
N
O
P
R
S
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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June 2021
© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 5 – 2
DMN63D8LDW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Steady
±20
V
V
GSS
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
220
170
mA
Continuous Drain Current (Note 5)
V
GS
= 10V
I
D
State
Steady
State
260
210
mA
mA
Continuous Drain Current (Note 6)
V
GS
= 10V
I
D
800
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
300
400
Unit
(Note 5)
Total Power Dissipation
(Note 6)
mW
P
D
(Note 5)
435
330
Thermal Resistance, Junction to Ambient
(Note 6)
R
JA
°C/W
°C
(Note 6)
Thermal Resistance, Junction to Case
139
R
JC
Operating and Storage Temperature Range
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol Min
Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
30
V
1.0
BV
DSS
V
GS
= 0V, I
D
= 250
A
V
DS
= 30V, V
GS
= 0V
µA
I
DSS
I
GSS
±10.0
A V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.8
80
1.5
2.8
3.8
4.2
4.5
13
V
V
GS(TH)
0.8
V
DS
= V
GS
, I
D
= 250
A
V
GS
= 10.0V, I
D
= 250mA
V
GS
= 5V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 4.0V, I
D
= 250mA
V
GS
= 2.5V, I
D
= 10mA
V
DS
= 10V, I
D
= 0.115A
V
GS
= 0V, I
S
= 115mA
Static Drain-Source On-Resistance
R
DS(ON)
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
mS
V
g
FS
1.2
V
SD
22.0
3.2
C
iss
C
oss
C
rss
R
G
Output Capacitance
pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
2.0
79.9
0.87
0.43
0.11
0.11
3.3
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
Q
g
nC
V
DS
= 30V, I
D
= 150mA
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
3.2
V
DD
= 30V, I
D
= 0.115A, V
GEN
= 10V
,
R
GEN
= 25
ns
Turn-Off Delay Time
12.0
6.3
t
D(OFF)
t
F
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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June 2021
© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 5 – 2
DMN63D8LDW
0.8
0.7
0.6
0.5
0.4
V
= 10.0V
GS
V
= 5.0V
DS
V
= 4.5V
0.6
0.5
GS
V
= 4.0V
GS
V
= 3.0V
GS
0.4
0.3
0.2
0.3
0.2
T
= 150°C
A
T
A
= 125°C
V
= 2.5V
T
= 85°C
GS
A
0.1
0
T
= 25°C
0.1
0
A
V
= 2.0V
GS
T
= -55°C
A
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2 Typical Transfer Characteristics
5
4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
V
= 2.5V
GS
3
2
V
V
= 4.5V
= 10V
GS
GS
I
= 250mA
D
I
= 100mA
D
1
0
I
= 10mA
D
1.5
1.0
0
0.1 0.2 0.3
0.4 0.5 0.6 0.7
0.8
0
5
10
15
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOL
T
A
GE (V)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.6
1.4
10
8
V
I
= 5.0V
GS
= 300mA
V
= 4.5V
D
GS
V
= 4.0V
GS
= 200mA
I
D
T
= 150°C
A
1.2
1.0
6
4
T
= 125°C
A
T
= 85°C
A
T
T
= 25°C
A
A
0.8
0.6
2
0
= -55°C
-50 -25
0
25 50
75
100 125 150
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.8
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance
V
a
riation with
T
emperature
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 5 – 2
DMN63D8LDW
5.0
4.5
2.0
1.8
4.0
3.5
3.0
2.5
2.0
1.6
1.4
1.2
1.0
I
= 1mA
D
I
= 250µA
D
V
= 4.0V
GS
I
= 200mA
D
0.8
0.6
1.5
1.0
V
= 5.0V
GS
I
= 300mA
D
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50 75 100 125
150
T
J
, JUNCTION TEMPERATURE (
C)
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance
V
a
riation with
T
emperature
Figure 8 Gate Threshold Variation vs. Junction Temperature
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
A
= 150°C
A
T
= 125°C
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
0.1
0
0
0.3
0.6
0.9
1.2
1.5
V
S
D
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
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© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 5 – 2
DMN63D8LDW
Package Outline Dimensions
SOT363 (Standard)
E
E1
SOT363 (Standard)
Dim Min Max
Typ
A1
0.00 0.10
0.05
A2
0.80 1.00
0.90
b
c
D
E
0.10 0.35
0.225
0.08 0.22
0.15
1.80 2.20
2.00
2.00 2.45
2.225
F
b
E1
1.15 1.35
1.25
D
e
F
L
a
—
—
0.65
0.25 0.45
0.35
0.25 0.46
0.355
0
°
8
°
—
A2
All Dimensions in mm
c
a
L
e
A1
Suggested Pad Layout
SOT363 (Standard)
C
Value
Dimensions
(in mm)
C
G
X
Y
Y1
0.650
1.300
0.420
0.600
2.500
Y1
G
Y
X
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June 2021
© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 5 – 2
DMN63D8LDW
IMPORTANT NOTICE
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,
1.
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY
INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al
l damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu
ment.
5.
Diodes
p
roducts
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
Copyright © 2021 Diodes Incorporated
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© Diodes Incorporated
DMN63D8LDW
Document number: DS36021 Rev. 5 – 2
