Diodes-Incorporated-DMN65D8LFB-7

DMN65D8LFB  

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET  

Product Summary  

Features and Benefits  





















N-Channel MOSFET  

I

D  

V

(BR)DSS  

R

DS(ON)  

T

A

= +25°C  

Low On-Resistance  

Low Gate-Threshold Voltage  

400mA  

330mA  

3.0

Ω @ V

GS

= 10V  

4

.0Ω @ V

GS

= 5V  

Low-Input Capacitance  

60V  

Fast Switching Speed  

Small-Surface Mount Package  

ESD Protected Gate, 1.2kV HBM  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

Qualified to AEC-Q101 Standards for High Reliability  

Mechanical Data  

Description and Applications  





Case: X1-DFN1006-3  

This new generation MOSFET is designed to minimize the on-state  

resistance (R

DS(ON)

) yet maintain superior switching performance,  

which makes it ideal for high-efficiency power-management  

applications.  

Case Material: Molded Plastic, “Green” Molding Comp

ound;  

UL Flammability Classification Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminal Connections: See Diagram  







Terminals: Finish

—

NiPdAu over Copper Leadframe;  







DC-DC Converters  

e4  

Solderable per MIL-STD-202, Method 208  

Weight: 0.001 grams (Approximate)  

Power Management Functions  



Battery Operated Systems and Solid-State Relays  

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,  

Memories, Transistors, etc.  

Drain  

X1-DFN1006-3  

Body  

Diode  

Gate  

S

D

Gate  

G

Protection  

Diode  

Source  

Bottom View  

ESD PROTECTED TO 1.2kV  

Top View  

Pin Configuration  

Equivalent Circuit  

Ordering Information

(Note 4)  

Part Number  

DMN65D8LFB-7  

DMN65D8LFB-7B  

Case  

X1-DFN1006-3  

X1-DFN1006-3  

Packaging  

3000/Tape & Reel  

10,000/Tape & Reel  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

2. See

r more information about Diodes Incorporated’s definitions

of Halogen- and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-fre

e “Green” products are defined as those which contain <900ppm bromine, <900ppm chlori

ne (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

4. For packaging details, refer to our website at

1 of 6  

June 2018  

© Diodes Incorporated  

DMN65D8LFB  

Document number: DS35545 Rev. 4 – 2  

DMN65D8LFB  

Marking Information  

From date code 1527 (YYWW),  

this changes to:  

X1  

X1  

Top View  

Top View  

Bar Denotes Gate and Source Side  

Dot Denotes Drain Side  

DMN65D8LFB-7  

X1  

Top View  

Bar Denotes Gate and Source Side  

X1 = Part Marking Code  

DMN65D8LFB-7B  

2 of 6  

June 2018  

© Diodes Incorporated  

DMN65D8LFB  

Document number: DS35545 Rev. 4 – 2  

DMN65D8LFB  

Maximum Ratings  

Characteristic  

Symbol  

V

DSS  

Value  

60  

Units  

V

V

Drain-Source Voltage  

Gate-Source Voltage  



20  

V

GSS  

Steady  

State  

T

A

= +25°C  

T

A

= +70°C  

T

A

= +25°C  

T

A

= +70°C  

260  

210  

mA  

mA  

Continuous Drain Current (Note 4) V

GS

= 10V  

Continuous Drain Current (Note 5) V

GS

= 10V  

I

D  

I

D  

Steady  

State  

400  

310  

Thermal Characteristics  

Characteristic  

Symbol  

Value  

430  

Units  

mW  

Power Dissipation, @ T

A

= +25°C (Note 4)  

P

D  

R

ϴ

JA  

290  

°C/W  

mW  

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 4)  

Power Dissipation, @ T

A

= +25°C (Note 5)  

840  

P

D  

147  

°C/W  

°C  

Thermal Resistance, Junction to Ambient @ T

A

= +25°C (Note 5)  

Operating and Storage Temperature Range  

R

ϴ

JSA  

T

J

, T

STG  

-55 to +150  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS

(Note 6)  

Drain-Source Breakdown Voltage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

60  

—

—

—

—

—

—

0.1  



10  

V

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  

µA  

µA  

Zero Gate Voltage Drain Current T

J

= +25°C  

Gate-Body Leakage  

V

DS

= 60V, V

GS

= 0V  

I

GSS  

V

GS

=



20V, V

DS

= 0V  

ON CHARACTERISTICS

(Note 6)  

Gate Threshold Voltage  

—

—

1.2  

2.0  

V

V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 0.115A  

V

GS

= 5V, I

D

= 0.115A  

V

DS

= 10V, I

D

= 0.115A  

V

GS

= 0V, I

S

= 0.115A  

3.0  

4.0  

Static Drain-Source On-Resistance  

—

Ω

R

DS (ON)  

Forward Transfer Admittance  

Diode Forward Voltage  

DYNAMIC CHARACTERISTICS

(Note 7)  

Input Capacitance  

80  

320  

0.7  

—

mS  

V

|Y

fs

|  

V

SD  

—

1.2  

—

—

—

—

—

—

—

—

—

—

—

—

—

—

25  

4.7  

pF  

pF  

pF  

ns  

ns  

ns  

ns  

C

iss  

C

oss  

C

rss  

t

D(on)  

t

r  

Output Capacitance  

V

DS

= 25V, V

GS

= 0V, f = 1.0MHz  

Reverse Transfer Capacitance  

Turn-On Delay Time  

2.5  

3.27  

3.15  

12.025  

6.29  

Turn-On Rise Time  

V

DD

= 30V, V

GEN

= 10V,  

R

GEN

= 25

Ω

,I

D

= 0.115A  

Turn-Off Delay Time  

t

D(off)  

t

f  

Turn-Off Fall Time  

Notes:  

4. Device mounted on FR-4 PCB with minimum recommended pad layout, single-sided.  

5.

Device mounted on 2”

×

2” FR

-4 PCB with high coverage 2oz. Copper, single-sided

.

 

6. Short duration pulse test used to minimize self-heating effect.  

7. Guaranteed by design. Not subject to production testing.  

3 of 6  

June 2018  

© Diodes Incorporated  

DMN65D8LFB  

Document number: DS35545 Rev. 4 – 2  

DMN65D8LFB  

0.6  

1

T =150



C  

A

V

= 5.0V  

T =125



C  

V

=10V  

GS  

DS  

A

V

=3.5V  

GS  

V

=3.0V  

GS  

0.5  

0.4  

V

=4.0V  

GS  

V

=5.0V  

GS  

T =25



C  

A

V

=4.5V  

GS  

T =-55



C  

A

T =85



C  

A

0.1  

0.3  

0.2  

0.1  

0.0  

V

=2.5V  

GS  

0.01  

0

0.5  

1

1.5  

2

2.5  

3

3.5  

4

4.5  

5

0

0.5  

1

1.5  

2

2.5  

3

3.5  

4

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Fig.1 Typical Output Characteristics  

V

GS

, GATE-SOURCE VOL

T

A

GE  

Fig. 2

 

Typical Transfer Characteristics  

5

2.4  

2.2  

4.5  

4

V

I

=10V,  

GS  

=

1

15mA  

D

2

3.5  

1.8  

1.6  

1.4  

1.2  

3

2.5  

2

V

=5V  

GS  

V

I

=5V,  

GS  

=

1

15mA  

D

V

=10V  

GS  

1.5  

1

1

0.8  

0.6  

0.4  

0.5  

0

0

0.1  

0.2  

0.3  

0.4  

0.5  

0.6  

-50  

-25  

0

25  

50  

75 100

 

125 150  

TJ, JUNCTION TEMPERATURE (



C)  

Fig. 4 On-Resistance Variation with

T

e

mperature  

I

D

, DRAIN-SOURCE CURRENT (A)  

Fig. 3 Typical On-Resistance vs.  

Drain Current and Gate Charge  

2

50  

45  

40  

35  

30  

25  

20  

15  

f=1MHz  

1.8  

1.6  

1.4  

1.2  

1

I

=1mA  

D

C

ISS  

I

=250µA  

D

0.8  

0.6  

10  

0.4  

0.2  

0

C

OSS  

5

0

C

RSS  

0

5

10  

15  

20  

25  

-50  

-25  

TJ, JUNCTION TEMPER

A

T

URE (°C)  

Fig. 5 Gate Threshold Variation vs. Ambient

T

e

mperature  

0

25  

50  

75 100

 

125 150  

V

DS

, DRAIN-SOURCE VOL

T

A

GE  

Fig. 6 Typical Junction Capacitance  

4 of 6  

June 2018  

© Diodes Incorporated  

DMN65D8LFB  

Document number: DS35545 Rev. 4 – 2  

DMN65D8LFB  

1

T =125°C  

A

T =25°C  

A

T =150°C  

A

0.1  

T =85°C  

A

T =-55°C  

A

0.01  

0.001  

0

0.2  

0.4  

0.6  

0.8  

1

1.2  

V

SD

, SOURCE-DRAIN VOLTAGE (V)  

Fig. 7

 

Diode Forward Voltage vs. Current  

Package Outline Dimensions  

Please see

r the latest version.  

X1-DFN1006-3  

A

A1  

X1-DFN1006-3  

Dim Min Max Typ  

0.47 0.53 0.50  

A1

0.00 0.05 0.03  

0.10 0.20 0.15  

b2

0.45 0.55 0.50  

A

Seating Plane  

b

D

b

Pin #1 ID  

D

E

e

0.95 1.075 1.00  

0.55 0.675 0.60  

–

–

0.35  

L1

0.20 0.30 0.25  

L2

0.20 0.30 0.25  

E

b2  

e

L3  

z

–

–

0.40  

0.02 0.08 0.05  

All Dimensions in mm  

z

L2  

L3  

L1  

Suggested Pad Layout  

Please see

r the latest version.  

X1-DFN1006-3  

C

Y

Dimensions Value

 

(in mm)  

C

G1  

G2  

X

X1  

Y

0.70  

0.30  

0.20  

0.40  

1.10  

0.25  

0.70  

Y1  

G2  

X

G1  

Y1  

X1  

5 of 6  

June 2018  

© Diodes Incorporated  

DMN65D8LFB  

Document number: DS35545 Rev. 4 – 2  

DMN65D8LFB  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2018, Diodes Incorporated  

6 of 6  

June 2018  

© Diodes Incorporated  

DMN65D8LFB  

Document number: DS35545 Rev. 4 – 2