Diodes-Incorporated-DMN65D8LT-13
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DMN65D8LT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance: R
DS(ON)
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
Low Gate Threshold Voltage
0.21A
0.20A
5
Ω @ V
GS
= 10V
6
Ω @ V
GS
= 5V
Low Input Capacitance
60V
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 1kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified
representative.
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Mechanical Data
Motor Control
Power Management Functions
Case: SOT523
Case Material:
Molded Plastic, “Green” Molding
Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (Approximate)
SOT523
D
D
G
G
S
Gate Protection
Diode
ESD Protected up to 1kV
S
Top View
Top View
Equivalent Circuit
Pin Out Configuration
Ordering Information
(Note 4)
Part Number
DMN65D8LT-7
DMN65D8LT-13
Case
SOT523
SOT523
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for
more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl
) and
<1000ppm antimony compounds.
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October 2020
© Diodes Incorporated
DMN65D8LT
Document number: DS38190 Rev. 3 – 2
DMN65D8LT
Marking Information
58D = Product Type Marking Code
YM = Date Code Marking
Y or
= Year (ex: H = 2020)
58D
YM
̅
M = Month (ex: 9 = September)
Date Code Key
2025 2026 2027 2028
Year
2014
…
2019
2020
2021
2022
2023
2024
Code
B
…
G
H
I
J
K
L
M
N
O
P
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
210
T
A
= +25°C
T
A
= +70°C
Steady
State
mA
Continuous Drain Current (Note 6) V
GS
= 5.0V
I
D
170
210
0.7
0.7
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
mA
A
I
S
I
DM
I
SM
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
300
Unit
mW
°C/W
mW
°C/W
°C
Total Power Dissipation (Note 5)
P
D
R
θ
JA
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
426
360
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
351
R
θ
JA
-55 to +150
T
J,
T
STG
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October 2020
© Diodes Incorporated
DMN65D8LT
Document number: DS38190 Rev. 3 – 2
DMN65D8LT
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
V
1.0
±10
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10µA
µA
µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.2
2.0
5.0
6.0
V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 0.115A
V
GS
= 5V, I
D
= 0.115A
V
GS(TH)
R
DS(ON)
2.0
Static Drain-Source On-Resistance
Ω
2.2
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
24
2.8
1.8
50
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
0.4
0.12
0.14
2.0
1.9
9.5
4.3
Q
g
Gate-Source Charge
Gate-Drain Charge
nC
Q
gs
Q
gd
t
D(ON)
t
R
V
= 30V, V
= 4.5V, I
= 150mA
GS D
DD
Turn-On Delay Time
Turn-On Rise Time
V
GS
= 10V, V
DD
= 30V, R
g
= 25
Ω
,
ns
Turn-Off Delay Time
Turn-Off Fall Time
t
D(OFF)
t
F
I
D
= 0.2A
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6.
Device mounted on 1” x 1” FR
-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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October 2020
© Diodes Incorporated
DMN65D8LT
Document number: DS38190 Rev. 3 – 2
DMN65D8LT
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 10.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
DS
= 5V
V
GS
=3.5V
V
GS
= 3.0V
T
A
= 125
℃
T
A
= 150
℃
T
A
= 85
℃
T
A
= 25
℃
V
GS
= 2.5V
V
GS
= 2.2V
T
A
= -55
℃
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
10
8
4
3.5
3
6
V
GS
= 5V
2.5
2
4
I
D
= 115mA
V
GS
= 10V
2
1.5
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0
4
8
12
16
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
8
6
4
2
0
2.2
V
GS
= 10V
2
1.8
1.6
1.4
1.2
1
V
GS
= 10V, I
D
= 115mA
T
A
= 150
℃
T
A
= 125
℃
V
GS
= 5V, I
D
= 115mA
T
A
= 85
℃
0.8
0.6
0.4
T
A
= 25
℃
T
A
= -55
℃
0
0.1
0.2
0.3
0.4
0.5
0.6
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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© Diodes Incorporated
DMN65D8LT
Document number: DS38190 Rev. 3 – 2
DMN65D8LT
5
4
3
2
1
0
2
1.8
1.6
1.4
1.2
1
I
D
= 1mA
V
GS
= 5V, I
D
= 115mA
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 115mA
0.8
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
0.6
0.5
0.4
0.3
0.2
0.1
0
100
f=1MHz
V
GS
= 0V
C
iss
10
T
J
= 85
o
C
T
J
= 125
o
C
C
oss
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
C
rss
1
0
0.3
0.6
0.9
1.2
1.5
0
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
30
35
40
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1
8
6
4
2
0
R
DS(ON)
Limited
0.1
0.01
P
W
=100µs
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
P
W
=10s
T
J(Max)
= 150
℃
T
C
= 25
℃
V
DS
= 30V, I
D
= 150mA
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
DC
0.001
0
0.1
0.2
0.3
Q
g
(nC)
Figure 11. Gate Charge
0.4
0.5
0.6
0.7
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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October 2020
© Diodes Incorporated
DMN65D8LT
Document number: DS38190 Rev. 3 – 2
DMN65D8LT
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 433
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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October 2020
© Diodes Incorporated
DMN65D8LT
Document number: DS38190 Rev. 3 – 2
DMN65D8LT
Package Outline Dimensions
SOT523
E
E1
SOT523
Dim Min
Max
0.10
Typ
0.05
0.75
0.50
0.22
0.12
1.60
1.60
0.80
A1
A2
A3
b
c
D
E
E1
e
0.00
0.60
0.80
0.45
0.15
0.10
1.50
1.45
0.75
0.65
0.30
0.20
1.70
1.75
0.85
0.50 BSC
1.10
0.40
b
e1
D
e1
L
a
0.90
0.20
0
°
1.00
0.33
8
°
A2
—
A3
All Dimensions in mm
c
a
e
L
A1
Suggested Pad Layout
SOT523
Value
(in mm)
Dimensions
Y1
C
C
X
1.29
0.40
X1
Y
Y1
0.70
0.51
1.80
Y
X
X1
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October 2020
© Diodes Incorporated
DMN65D8LT
Document number: DS38190 Rev. 3 – 2
DMN65D8LT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
8 of 8
October 2020
© Diodes Incorporated
DMN65D8LT
Document number: DS38190 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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