Diodes-Incorporated-DMN65D8LW-7
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DMN65D8LW
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
Low On-Resistance
V
(BR)DSS
R
DS(ON)
Package
T
A
= +25°C
Low Gate Threshold Voltage
300mA
260mA
3
Ω
@ V
GS
= 10V
4
Ω
@ V
GS
= 5V
Low Input Capacitance
60V
SOT323
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SOT323
Applications
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
DC-DC Converters
Power Management Functions
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
e3
Terminal Connections: See Diagram
Drain
Weight: 0.006 grams (approximate)
SOT323
D
Gate
S
G
Gate
Protection
Diode
Source
ESD PROTECTED TO 1kV
Top View
Top View
Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN65D8LW
-7
SOT323
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
MM3 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
MM3
MM3
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or
= Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 5
September 2013
© Diodes Incorporated
DMN65D8LW
Document number: DS35639
Rev. 5 – 2
DMN65D8LW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
A
= +25°C
Steady
State
300
230
mA
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 5V
I
D
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Steady
State
260
210
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
800
1
mA
A
I
DM
I
S
Thermal Characteristics
Characteristic
Symbol
Value
Units
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 5)
300
432
Total Power Dissipation
mW
P
D
398
Thermal Resistance, Junction to Ambient
R
θ
JA
290
°C/W
°C
Thermal Resistance, Junction to Case
142
R
θ
JC
Operating and Storage Temperature Range
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
V
BV
DSS
I
DSS
1.0
V
GS
= 0V, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
µA
µA
±5.0
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.2
80
–
2.0
3
V
V
GS(th)
2
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 0.115A
Static Drain-Source On-Resistance
R
DS (ON)
2.5
290
0.8
4
mS
V
V
GS
= 5V, I
D
= 0.115A
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
g
FS
1.2
V
DS
= 10V, I
D
= 0.115A
V
GS
= 0V, I
S
= 115mA
V
SD
22.0
3.2
C
iss
C
oss
C
rss
R
G
Output Capacitance
pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
2.0
79.9
0.87
0.43
0.11
0.11
2.7
Total Gate Charge
V
GS
= 10V
Total Gate Charge V
GS
= 4.5V
Gate-Source Charge
Q
g
Q
g
V
GS
= 10V, V
DS
= 30V,
nC
nS
I
D
= 150mA
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
2.8
V
DD
= 30V, I
D
= 0.115A, V
GEN
= 10V
,
R
GEN
= 25
Turn-Off Delay Time
12.6
7.3
t
D(off)
t
f
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 5
September 2013
© Diodes Incorporated
DMN65D8LW
Document number: DS35639
Rev. 5 – 2
DMN65D8LW
1
0.6
0.5
0.4
V
= 5.0V
DS
0.1
0.3
0.2
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
0.1
0
T
= -55°C
A
0.01
0
1
2
3
4
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
4.0
V
GS
, GATE-SOURCE VOLTAGE
Figure 2
Typical Transfer Characteristics
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1
Typical Output Characteristic
5.0
4.5
2.4
2.2
2.0
4.0
3.5
3.0
2.5
V
= 10V
GS
I
= 115mA
D
1.8
1.6
1.4
1.2
1.0
0.8
V
= 5V
GS
V
= 5V
GS
I
= 115mA
D
V
= 10V
2.0
1.5
1.0
GS
0.5
0
0.6
0.4
0
0.1
0.2
0.3
0.4
0.5
0.6
50 -25
T
J
, JUNCTION TEMPERATURE (
Figure 4
On-Resistance Variation with
T
emperature
0
25
50
75 100
125 150
C)
I
D
, DRAIN CURRENT
Figure 3
Typical On-Resistance vs.
Drain Current and
T
e
mperature
5
4
2.0
1.8
1.6
1.4
1.2
I
= 1mA
D
V
= 5V
GS
3
2
I
= 250µA
I
= 115mA
D
D
1.0
0.8
0.6
0.4
V
= 10V
GS
I
= 115mA
D
1
0
0.2
0
– 50
-25
0
25
50
75 100
125 150
C)
Figure 5
On-Resistance Variation with
T
e
mperature
-50 -25
T
J
, JUNCTION TEMPERATURE (
Figure 6
Gate Threshold Variation vs. Ambient
T
e
mperature
0
25
50 75 100 125
150
C)
T
J
, JUNCTION TEMPERATURE (
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September 2013
© Diodes Incorporated
DMN65D8LW
Document number: DS35639
Rev. 5 – 2
DMN65D8LW
1,000
100
1
0.1
T
= 150°C
A
T
= 150°C
A
T
= 85°C
T
= 125°C
A
A
T
= 125°C
A
T
= 25°C
10
1
0.01
A
T
= 85°C
A
T
= -55°C
T
= 25°C
A
T
= -55°C
A
A
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 7
Diode Forward Voltage vs. Current
Figure 8
Typical Drain-Source Leakage Current vs. Voltage
50
45
10
9
f = 1MHz
V
I
= 30V
DS
40
35
30
25
20
15
8
7
6
5
= 150mA
D
C
iss
4
3
2
10
C
oss
5
0
1
0
C
rss
0
5
10
15
20
25
0
0.2
0.4
0.6
0.8
1.0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, TO
T
A
L GATE CHARGE
(nC)
Figure 9
Typical Junction Capacitance
Figure 10
Gate Charge
Package Outline Dimensions
A
SOT323
Dim
A
Min
Max
0.40
1.35
2.20
–
1.40
2.20
0.10
1.00
0.40
0.18
8°
Typ
0.30
1.30
2.10
0.65
1.30
2.15
0.05
0.95
0.30
0.11
–
0.25
1.15
2.00
–
1.20
1.80
0.0
0.90
0.25
0.10
0°
C
B
B
C
D
G
H
J
K
L
M
G
H
K
J
M
L
D
All Dimensions in mm
4 of 5
September 2013
© Diodes Incorporated
DMN65D8LW
Document number: DS35639
Rev. 5 – 2
DMN65D8LW
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.8
0.7
0.9
1.9
1.0
Z
C
E
X
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
5 of 5
September 2013
© Diodes Incorporated
DMN65D8LW
Document number: DS35639
Rev. 5 – 2
