Diodes-Incorporated-DMN65D9L-13
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DMN65D9L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
4.0
Ω @ V
GS
= 10V
4.1
Ω @ V
GS
= 5V
4.2
Ω @ V
GS
= 4V
335mA
330mA
327mA
ESD Protected
60V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified
representative.
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high efficiency power management applications.
Mechanical Data
Motor Control
Power Management Functions
Backlighting
Case: SOT23
Case Material: Molded Plas
tic, “Green” Molding
Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
D
SOT23
D
G
S
G
ESD Protected
Gate Protection
Diode
S
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN65D9L-7
DMN65D9L-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s
definitions of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
5D9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: I = 2021)
M = Month (ex: 9 = September)
Date Code Key
Year
2018
…
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
F
…
I
J
K
L
M
N
O
P
R
S
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
1 of 7
March 2021
© Diodes Incorporated
DMN65D9L
Document number: DS40594
Rev. 5 – 2
DMN65D9L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Unit
V
Gate-Source Voltage
±16
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
335
268
mA
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
335
700
700
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
mA
mA
mA
I
S
I
DM
I
SM
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
270
Unit
mW
°C/W
mW
°C/W
°C
Total Power Dissipation (Note 5)
P
D
R
θ
JA
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
293
670
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
186
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol Min
Typ
Max Unit
Test Condition
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
60
—
—
—
1.0
±10
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
µA
µA
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.0
—
—
2.5
V
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.2A
V
GS
= 4V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
3.2
2.9
3.0
4.0
4.1
4.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
0.8
1.1
—
—
—
—
—
—
—
—
—
—
—
—
—
41
4.4
2.6
900
0.4
0.2
0.1
3.7
3.6
102
22
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz, V
GS
= 0V, V
DS
= 0V
Total Gate Charge
nC
nC
nC
ns
ns
Q
g
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
Turn-Off Delay Time
ns R
g
= 25
Ω
, I
D
= 200mA
t
D(OFF)
t
F
Turn-Off Fall Time
ns
20
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
=1A, di/dt = 100A/µs
I
F
= 1A, di/dt = 100A/µs
7.9
nC
Q
RR
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6.
Device mounted on 1” x 1” FR
-4 PCB with high coverage 2oz. copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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March 2021
© Diodes Incorporated
DMN65D9L
Document number: DS40594
Rev. 5 – 2
DMN65D9L
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 3.5V
V
GS
=4.0V
V
DS
= 5V
V
GS
= 3.0V
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 2.8V
T
J
=125
℃
T
J
=85
℃
V
GS
= 10.0V
T
J
=150
℃
T
J
=25
℃
T
J
=-55
℃
V
GS
= 2.5V
4
0
1
2
3
5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
20
18
16
14
12
10
8
5
4
3
2
1
V
GS
= 5V
I
D
= 500mA
V
GS
= 10V
6
4
2
0
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
7
6
5
4
3
2
1
0
2
1.8
1.6
1.4
1.2
1
V
GS
= 10V
T
J
=125
℃
T
J
=150
℃
V
GS
= 5V, I
D
= 200mA
V
GS
= 10V, I
D
= 500mA
T
J
=85
℃
V
GS
= 4V, I
D
= 200mA
T
J
=-55
℃
T
J
=25
℃
0.8
0.6
0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
3 of 7
March 2021
© Diodes Incorporated
DMN65D9L
Document number: DS40594
Rev. 5 – 2
DMN65D9L
8
7
6
5
4
3
2
1
0
2.5
2.2
1.9
1.6
1.3
1
V
GS
= 10V, I
D
= 500mA
V
GS
= 4V, I
D
= 200mA
I
D
= 1mA
I
D
= 250
μ
A
V
GS
= 5V, I
D
= 200mA
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
100
10
1
0.5
0.4
0.3
0.2
0.1
0
f=1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 85
℃
T
J
= 125
℃
T
J
= 25
℃
C
rss
T
J
= 150
℃
T
J
= -55
℃
0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
50
60
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
1
10
8
R
DS(ON)
Limited
0.1
6
P
W
=100µs
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
P
W
=10s
4
V
DS
= 10V, I
D
= 250mA
0.01
0.001
T
J(Max)
= 150
℃
T
A
= 25
℃
Single Pulse
2
DC
DUT on 1*MRP Board
V
GS
= 10V
0
0
0.2
0.4
Qg (nC)
Figure 11. Gate Charge
0.6
0.8
1
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
March 2021
© Diodes Incorporated
DMN65D9L
Document number: DS40594
Rev. 5 – 2
DMN65D9L
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 293
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
1E-06 1E-05
0.0001 0.001
0.01
0.1
1
10
100
1000 10000
100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13.
Transient Thermal Resistance
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March 2021
© Diodes Incorporated
DMN65D9L
Document number: DS40594
Rev. 5 – 2
DMN65D9L
Package Outline Dimensions
SOT23
All 7°
H
SOT23
Min Max
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.51
1.40
2.50
1.03 0.915
0.60 0.535
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
Suggested Pad Layout
SOT23
Dimensions Value
(in mm)
C
X
2.0
0.8
Y
X1
Y
Y1
1.35
0.9
2.9
Y1
C
X
X1
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March 2021
© Diodes Incorporated
DMN65D9L
Document number: DS40594
Rev. 5 – 2
DMN65D9L
IMPORTANT NOTICE
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,
1.
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY
INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al
l damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu
ment.
5.
Diodes
p
roducts
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
Copyright © 2021 Diodes Incorporated
7 of 7
March 2021
© Diodes Incorporated
DMN65D9L
Document number: DS40594
Rev. 5 – 2
Mouser Electronics
Authorized Distributor
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